JPS57194255A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS57194255A
JPS57194255A JP7875081A JP7875081A JPS57194255A JP S57194255 A JPS57194255 A JP S57194255A JP 7875081 A JP7875081 A JP 7875081A JP 7875081 A JP7875081 A JP 7875081A JP S57194255 A JPS57194255 A JP S57194255A
Authority
JP
Japan
Prior art keywords
magnetic pole
approximately
target
annular shape
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7875081A
Other languages
Japanese (ja)
Other versions
JPS5943546B2 (en
Inventor
Hisaharu Obinata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP7875081A priority Critical patent/JPS5943546B2/en
Publication of JPS57194255A publication Critical patent/JPS57194255A/en
Publication of JPS5943546B2 publication Critical patent/JPS5943546B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Abstract

PURPOSE:To improve the use efficiency of targets by forming one magnetic pole into an annular shape and providing the other magnetic pole in the central part thereof and providing a target of approximately an annular shape in front of one magnetic pole and a target of approximately a plate shape in front of the other. CONSTITUTION:A titled device consisting of a pair of magnetic poles formed of one magnetic pole 8a of an annular shape on the outer side and the other magnetic pole 8b in the central part thereof, a target 5a of approximately an annular shape facing the direction of substrates 6 in front of the pole 8a, a target 5b of approximately a plate shape likewise facing the direction of the substrates 6 in front of the pole 8b, and a vacuum treating chamber 1. Cathode potential is applied to said targets 5a, 5b to generate plasma of high density, and to develop erosion areas 10 over the entire surface between a pair of the poles 8a and 8b. In this way, the use efficiency of the targets 5a, 5b is improved.
JP7875081A 1981-05-26 1981-05-26 sputtering equipment Expired JPS5943546B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7875081A JPS5943546B2 (en) 1981-05-26 1981-05-26 sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7875081A JPS5943546B2 (en) 1981-05-26 1981-05-26 sputtering equipment

Publications (2)

Publication Number Publication Date
JPS57194255A true JPS57194255A (en) 1982-11-29
JPS5943546B2 JPS5943546B2 (en) 1984-10-23

Family

ID=13670565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7875081A Expired JPS5943546B2 (en) 1981-05-26 1981-05-26 sputtering equipment

Country Status (1)

Country Link
JP (1) JPS5943546B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861461U (en) * 1981-10-19 1983-04-25 富士通株式会社 sputtering equipment
FR2563239A1 (en) * 1984-04-19 1985-10-25 Balzers Hochvakuum ARRANGEMENT FOR REVEATING SUBSTRATES BY CATHODE SPRAY
JPS6139522A (en) * 1984-05-17 1986-02-25 バリアン・アソシエイツ・インコ−ポレイテツド Magnetron sputtering device having flat and recess targets
JPS63219578A (en) * 1987-03-06 1988-09-13 Matsushita Electric Ind Co Ltd Sputtering device
EP0328033A2 (en) * 1988-02-08 1989-08-16 Nippon Telegraph and Telephone Corporation Thin film forming apparatus and ion source utilizing plasma sputtering
EP0328076A2 (en) * 1988-02-08 1989-08-16 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063882Y2 (en) * 1986-08-28 1994-02-02 前澤化成工業株式会社 Lid device for cleaning the drainage pipe

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861461U (en) * 1981-10-19 1983-04-25 富士通株式会社 sputtering equipment
FR2563239A1 (en) * 1984-04-19 1985-10-25 Balzers Hochvakuum ARRANGEMENT FOR REVEATING SUBSTRATES BY CATHODE SPRAY
JPS6139522A (en) * 1984-05-17 1986-02-25 バリアン・アソシエイツ・インコ−ポレイテツド Magnetron sputtering device having flat and recess targets
JPH036221B2 (en) * 1984-05-17 1991-01-29 Varian Associates
JPS63219578A (en) * 1987-03-06 1988-09-13 Matsushita Electric Ind Co Ltd Sputtering device
EP0328033A2 (en) * 1988-02-08 1989-08-16 Nippon Telegraph and Telephone Corporation Thin film forming apparatus and ion source utilizing plasma sputtering
EP0328076A2 (en) * 1988-02-08 1989-08-16 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source

Also Published As

Publication number Publication date
JPS5943546B2 (en) 1984-10-23

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