JPS57157511A - Opposite target type sputtering device - Google Patents
Opposite target type sputtering deviceInfo
- Publication number
- JPS57157511A JPS57157511A JP4169781A JP4169781A JPS57157511A JP S57157511 A JPS57157511 A JP S57157511A JP 4169781 A JP4169781 A JP 4169781A JP 4169781 A JP4169781 A JP 4169781A JP S57157511 A JPS57157511 A JP S57157511A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- targets
- power supply
- generated
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To control particle energy colliding with a substrate and its direction, and to grow a film having excellent magnetic characteristics at high speed by mounting a means generating an electrid field in the approximately vertical direction to the substrate. CONSTITUTION:Permanent magnets 32, 33 are set up in the holders 11, 12 of the backs of the targets T1, T2 opposed in parallel, and a magnetic field H is generated only between the targets T1, T2. The substrate 20 is supported 21 while being insulated from a vacuum tank 10 by an insulating material 22, and connected to a power supply 41, and the electric field is generated vertically to the substrate 20. The inside of the tank is sufficiently exhausted 51, Ar gas is introduced 61 to obtain predetermined pressure, and a sputtering power supply 40 and the bias power supply 41 are applied. The magnetic field H has hardly effect on secondary electrons scattered, Ar ions and metallic particles because it is generated only between the targets T1, T2 at that time, and the speed of deposition and crystallinity of a magnetic thin-film formed onto the substrate 20 are extremely superior because the electric field vertical to the substrate 20 is applied to plasma electric potential between the T1 and T2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169781A JPS57157511A (en) | 1981-03-24 | 1981-03-24 | Opposite target type sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169781A JPS57157511A (en) | 1981-03-24 | 1981-03-24 | Opposite target type sputtering device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57157511A true JPS57157511A (en) | 1982-09-29 |
JPH031810B2 JPH031810B2 (en) | 1991-01-11 |
Family
ID=12615606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4169781A Granted JPS57157511A (en) | 1981-03-24 | 1981-03-24 | Opposite target type sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57157511A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956717A (en) * | 1982-09-27 | 1984-04-02 | Hitachi Ltd | Manufacture of permalloy thin film for magnetic head |
JPS59193528A (en) * | 1983-04-18 | 1984-11-02 | Teijin Ltd | Magnetic recording medium and its production |
JPS6025211A (en) * | 1983-07-20 | 1985-02-08 | Konishiroku Photo Ind Co Ltd | Formation of thin film |
JPS60113319A (en) * | 1983-11-25 | 1985-06-19 | Teijin Ltd | Vertical magnetic recording medium |
JPH024964A (en) * | 1988-06-23 | 1990-01-09 | Teijin Ltd | Opposed target-type sputtering device |
JPH02156082A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | Sputtering device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512732A (en) * | 1978-07-14 | 1980-01-29 | Anelva Corp | Sputtering apparatus for making thin magnetic film |
-
1981
- 1981-03-24 JP JP4169781A patent/JPS57157511A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512732A (en) * | 1978-07-14 | 1980-01-29 | Anelva Corp | Sputtering apparatus for making thin magnetic film |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956717A (en) * | 1982-09-27 | 1984-04-02 | Hitachi Ltd | Manufacture of permalloy thin film for magnetic head |
JPS59193528A (en) * | 1983-04-18 | 1984-11-02 | Teijin Ltd | Magnetic recording medium and its production |
JPH0357539B2 (en) * | 1983-04-18 | 1991-09-02 | Teijin Ltd | |
JPS6025211A (en) * | 1983-07-20 | 1985-02-08 | Konishiroku Photo Ind Co Ltd | Formation of thin film |
JPH035644B2 (en) * | 1983-07-20 | 1991-01-28 | Konishiroku Photo Ind | |
JPS60113319A (en) * | 1983-11-25 | 1985-06-19 | Teijin Ltd | Vertical magnetic recording medium |
JPH0334127B2 (en) * | 1983-11-25 | 1991-05-21 | Teijin Ltd | |
JPH024964A (en) * | 1988-06-23 | 1990-01-09 | Teijin Ltd | Opposed target-type sputtering device |
JPH02156082A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | Sputtering device |
Also Published As
Publication number | Publication date |
---|---|
JPH031810B2 (en) | 1991-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4166018A (en) | Sputtering process and apparatus | |
US6599399B2 (en) | Sputtering method to generate ionized metal plasma using electron beams and magnetic field | |
US4179351A (en) | Cylindrical magnetron sputtering source | |
CA2326202C (en) | Method and apparatus for deposition of biaxially textured coatings | |
US3594295A (en) | Rf sputtering of insulator materials | |
EP0269446A3 (en) | System and method for vacuum deposition of thin films | |
US4915805A (en) | Hollow cathode type magnetron apparatus construction | |
JPS60135573A (en) | Method and device for sputtering | |
JPS5710329A (en) | Sputter vapor depositing device | |
JPS5713174A (en) | Reactive sputtering method | |
US4716340A (en) | Pre-ionization aided sputter gun | |
EP0447764A3 (en) | Cathodic sputtering substrate coating device | |
US5397448A (en) | Device for generating a plasma by means of cathode sputtering and microwave-irradiation | |
US5378341A (en) | Conical magnetron sputter source | |
JPS57157511A (en) | Opposite target type sputtering device | |
EP0047456B1 (en) | Ion plating without the introduction of gas | |
JPS57194255A (en) | Sputtering device | |
JPS57155369A (en) | High vacuum ion plating method and apparatus | |
JPS5743986A (en) | Film forming apparatus | |
JPH04276069A (en) | Method and device for sputtering | |
JPS5585671A (en) | Sputtering apparatus | |
JPH056286B2 (en) | ||
JPS56121629A (en) | Film forming method | |
JPS5569257A (en) | Low-temperature sputtering unit | |
JPH04354868A (en) | Target for magnetron sputtering device |