JPS5569257A - Low-temperature sputtering unit - Google Patents

Low-temperature sputtering unit

Info

Publication number
JPS5569257A
JPS5569257A JP14068178A JP14068178A JPS5569257A JP S5569257 A JPS5569257 A JP S5569257A JP 14068178 A JP14068178 A JP 14068178A JP 14068178 A JP14068178 A JP 14068178A JP S5569257 A JPS5569257 A JP S5569257A
Authority
JP
Japan
Prior art keywords
substrate product
magnetic field
low
tank
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14068178A
Other languages
Japanese (ja)
Other versions
JPS6016515B2 (en
Inventor
Katsuhide Manabe
Toshiyasu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP14068178A priority Critical patent/JPS6016515B2/en
Publication of JPS5569257A publication Critical patent/JPS5569257A/en
Publication of JPS6016515B2 publication Critical patent/JPS6016515B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To form a uniform metal film on a substrate product having vertical portion such as recesses or holes, by attaching a magnetic field-producing material to the substrate product cradle of a low-temp. sputtering unit, and by generating a magnetic field of a strength not lower than that desired strength at the desired position of the substrate product.
CONSTITUTION: A substrate product 12 having many holes 12a is placed on a substrate product cradle 8, and the vacuum tank 1 is evacuated, then Ar gas is introduced from a bombe 3 into the vacuum tank 1 in order to keep the tank at a suitable vacuum. A voltage is applied across the target 6 and an anode 7 so as to produce discharge. In the region where the electric field and the magnetic field generated by a magnet 10 cross each other, the electrons ionized by the discharge are in magnetron and form plasma. The target metal sputtered by the Ar+ contained in the plasma advances nearly straight to the substrate product 12. Because a magnetic field is formed by a magnitic field generating material 11, the metal atoms diffract due to the effect of the magnetic field and form films on the hole sections 12a, which are hardly metallized essentially, to a thickness similar to that of the film formed on the other section.
COPYRIGHT: (C)1980,JPO&Japio
JP14068178A 1978-11-15 1978-11-15 Low temperature sputtering equipment Expired JPS6016515B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14068178A JPS6016515B2 (en) 1978-11-15 1978-11-15 Low temperature sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14068178A JPS6016515B2 (en) 1978-11-15 1978-11-15 Low temperature sputtering equipment

Publications (2)

Publication Number Publication Date
JPS5569257A true JPS5569257A (en) 1980-05-24
JPS6016515B2 JPS6016515B2 (en) 1985-04-25

Family

ID=15274274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14068178A Expired JPS6016515B2 (en) 1978-11-15 1978-11-15 Low temperature sputtering equipment

Country Status (1)

Country Link
JP (1) JPS6016515B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58133376A (en) * 1982-01-26 1983-08-09 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetron bias sputtering method and device
JPS59140375A (en) * 1983-01-26 1984-08-11 マテリアルズ・リサ−チ・コ−ポレイシヨン Magnetron electrode for use in low pressure chamber of plasma treatment device
JP2005336506A (en) * 2004-05-24 2005-12-08 National Institute For Materials Science Single power source type sputtering apparatus having anode subjected to magnetic field control

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4641773B2 (en) * 2004-09-27 2011-03-02 大日本除蟲菊株式会社 Indoor dust mite repellent
CN103814153B (en) * 2011-09-22 2015-11-25 学校法人芝浦工业大学 Film forming method, film forming device, the treated object being formed with overlay film, mould and instrument

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58133376A (en) * 1982-01-26 1983-08-09 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetron bias sputtering method and device
JPS6330986B2 (en) * 1982-01-26 1988-06-21 Materiaruzu Risaachi Corp
JPS59140375A (en) * 1983-01-26 1984-08-11 マテリアルズ・リサ−チ・コ−ポレイシヨン Magnetron electrode for use in low pressure chamber of plasma treatment device
JPS6330987B2 (en) * 1983-01-26 1988-06-21 Materiaruzu Risaachi Corp
JP2005336506A (en) * 2004-05-24 2005-12-08 National Institute For Materials Science Single power source type sputtering apparatus having anode subjected to magnetic field control

Also Published As

Publication number Publication date
JPS6016515B2 (en) 1985-04-25

Similar Documents

Publication Publication Date Title
US4094764A (en) Device for cathodic sputtering at a high deposition rate
CA2326202C (en) Method and apparatus for deposition of biaxially textured coatings
Wasa et al. Low pressure sputtering system of the magnetron type
SE9704607D0 (en) A method and apparatus for magnetically enhanced sputtering
Howson et al. The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin films
JPS5710329A (en) Sputter vapor depositing device
EP0686708A4 (en) Film forming method and film forming apparatus
JPS5569257A (en) Low-temperature sputtering unit
JP3345009B2 (en) Method for ionizing material vapor produced by heating and apparatus for performing the method
Spencer et al. The design and performance of planar magnetron sputtering cathodes
Nyaiesh The characteristics of a planar magnetron operated at a high power input
JPS57194254A (en) Cathode for insulator target in rf sputtering
JP3685670B2 (en) DC sputtering equipment
JPS5489983A (en) Device and method for vacuum deposition compound
JPS58213875A (en) Sputtering method
JPS57157511A (en) Opposite target type sputtering device
JPS5562164A (en) Sputtering unit
JPH01132765A (en) Magnetron sputtering device
EP0790328A1 (en) Thin film deposition
JPS63213664A (en) Ion plating device
KR0138905B1 (en) Coating method of insulation thin film
JPS55141721A (en) Sputtering apparatus for magnetic body
EP0465733A1 (en) Vacuum ion plating method for the deposition of thin layers
Rao et al. Optimization studies on magnetic field geometry for planar magnetron sputtering targets
Kumagai A new AC sputtering technique for the deposition of thin films