JPS5569257A - Low-temperature sputtering unit - Google Patents
Low-temperature sputtering unitInfo
- Publication number
- JPS5569257A JPS5569257A JP14068178A JP14068178A JPS5569257A JP S5569257 A JPS5569257 A JP S5569257A JP 14068178 A JP14068178 A JP 14068178A JP 14068178 A JP14068178 A JP 14068178A JP S5569257 A JPS5569257 A JP S5569257A
- Authority
- JP
- Japan
- Prior art keywords
- substrate product
- magnetic field
- low
- tank
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE: To form a uniform metal film on a substrate product having vertical portion such as recesses or holes, by attaching a magnetic field-producing material to the substrate product cradle of a low-temp. sputtering unit, and by generating a magnetic field of a strength not lower than that desired strength at the desired position of the substrate product.
CONSTITUTION: A substrate product 12 having many holes 12a is placed on a substrate product cradle 8, and the vacuum tank 1 is evacuated, then Ar gas is introduced from a bombe 3 into the vacuum tank 1 in order to keep the tank at a suitable vacuum. A voltage is applied across the target 6 and an anode 7 so as to produce discharge. In the region where the electric field and the magnetic field generated by a magnet 10 cross each other, the electrons ionized by the discharge are in magnetron and form plasma. The target metal sputtered by the Ar+ contained in the plasma advances nearly straight to the substrate product 12. Because a magnetic field is formed by a magnitic field generating material 11, the metal atoms diffract due to the effect of the magnetic field and form films on the hole sections 12a, which are hardly metallized essentially, to a thickness similar to that of the film formed on the other section.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5569257A true JPS5569257A (en) | 1980-05-24 |
| JPS6016515B2 JPS6016515B2 (en) | 1985-04-25 |
Family
ID=15274274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14068178A Expired JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016515B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58133376A (en) * | 1982-01-26 | 1983-08-09 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetron bias sputtering method and device |
| JPS59140375A (en) * | 1983-01-26 | 1984-08-11 | マテリアルズ・リサ−チ・コ−ポレイシヨン | Magnetron electrode for use in low pressure chamber of plasma treatment device |
| JP2005336506A (en) * | 2004-05-24 | 2005-12-08 | National Institute For Materials Science | Single power source type sputtering apparatus having anode subjected to magnetic field control |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4641773B2 (en) * | 2004-09-27 | 2011-03-02 | 大日本除蟲菊株式会社 | Indoor dust mite repellent |
| CN103814153B (en) * | 2011-09-22 | 2015-11-25 | 学校法人芝浦工业大学 | Film forming method, film forming device, the treated object being formed with overlay film, mould and instrument |
-
1978
- 1978-11-15 JP JP14068178A patent/JPS6016515B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58133376A (en) * | 1982-01-26 | 1983-08-09 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetron bias sputtering method and device |
| JPS6330986B2 (en) * | 1982-01-26 | 1988-06-21 | Materiaruzu Risaachi Corp | |
| JPS59140375A (en) * | 1983-01-26 | 1984-08-11 | マテリアルズ・リサ−チ・コ−ポレイシヨン | Magnetron electrode for use in low pressure chamber of plasma treatment device |
| JPS6330987B2 (en) * | 1983-01-26 | 1988-06-21 | Materiaruzu Risaachi Corp | |
| JP2005336506A (en) * | 2004-05-24 | 2005-12-08 | National Institute For Materials Science | Single power source type sputtering apparatus having anode subjected to magnetic field control |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6016515B2 (en) | 1985-04-25 |
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