JPS5489983A - Device and method for vacuum deposition compound - Google Patents

Device and method for vacuum deposition compound

Info

Publication number
JPS5489983A
JPS5489983A JP15728677A JP15728677A JPS5489983A JP S5489983 A JPS5489983 A JP S5489983A JP 15728677 A JP15728677 A JP 15728677A JP 15728677 A JP15728677 A JP 15728677A JP S5489983 A JPS5489983 A JP S5489983A
Authority
JP
Japan
Prior art keywords
gas
substrate
collide
radicals
induce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15728677A
Other languages
Japanese (ja)
Inventor
Hirotaka Nakano
Hiroshi Washida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15728677A priority Critical patent/JPS5489983A/en
Publication of JPS5489983A publication Critical patent/JPS5489983A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To vacuum deposit a dense cpd. of a regular stoichiometric compsn. by allowing an evaporated metal to collide with an introduced gas converted into ions or radicals on a substrate to induce a chemical reaction. CONSTITUTION:A vacuum deposition method using Ti as an evaporating material and C2H2 gas as an introduced gas is as follows: vacuum vessel 1 is evacuated, e.g. to the level of 10<-4> Torr, and substrate 3 is simultaneously heated 2 to 300- 750 deg.C. Ti is melted with electron beams 7. C2H2 gas is introduced 4 into ionization or radical chamber 21, and voltage is applied from a DC or AC power source to generate discharge in chamber 21. Thus, the C2H2 gas is converted into ions or radicals, forming ion beams at a plasma state from orifice 22 toward substrate 3. A shutter is opened to evaporate the Ti, which is then allowed to collide with the ionized C2H2 gas on substrate 3 to induce a chemical reaction, thereby forming TiC. The formed TiC is grown as a film on substrate 3.
JP15728677A 1977-12-28 1977-12-28 Device and method for vacuum deposition compound Pending JPS5489983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15728677A JPS5489983A (en) 1977-12-28 1977-12-28 Device and method for vacuum deposition compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15728677A JPS5489983A (en) 1977-12-28 1977-12-28 Device and method for vacuum deposition compound

Publications (1)

Publication Number Publication Date
JPS5489983A true JPS5489983A (en) 1979-07-17

Family

ID=15646332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15728677A Pending JPS5489983A (en) 1977-12-28 1977-12-28 Device and method for vacuum deposition compound

Country Status (1)

Country Link
JP (1) JPS5489983A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533919U (en) * 1978-08-23 1980-03-05
JPS58177466A (en) * 1982-04-09 1983-10-18 Hitachi Ltd Formation of thin film
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
JPS5967046U (en) * 1982-10-25 1984-05-07 株式会社日立製作所 wireless transmitter
JPS63219573A (en) * 1987-03-10 1988-09-13 Raimuzu:Kk Formation of compound thin film
JPH01244403A (en) * 1988-03-25 1989-09-28 Nissin Electric Co Ltd Production of optical film
JPH01244402A (en) * 1988-03-25 1989-09-28 Nissin Electric Co Ltd Production of optical film
US20100264023A1 (en) * 2006-06-22 2010-10-21 National University Corporation Kitami Instutute Of Technology Method for producing metal nitride film, metal oxide film, metal carbide film or film of composite material thereof, and production apparatus therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533919U (en) * 1978-08-23 1980-03-05
JPS584920Y2 (en) * 1978-08-23 1983-01-27 東光株式会社 Zinc oxide thin film production equipment
JPS58177466A (en) * 1982-04-09 1983-10-18 Hitachi Ltd Formation of thin film
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
JPS5967046U (en) * 1982-10-25 1984-05-07 株式会社日立製作所 wireless transmitter
JPS63219573A (en) * 1987-03-10 1988-09-13 Raimuzu:Kk Formation of compound thin film
JPH01244403A (en) * 1988-03-25 1989-09-28 Nissin Electric Co Ltd Production of optical film
JPH01244402A (en) * 1988-03-25 1989-09-28 Nissin Electric Co Ltd Production of optical film
US20100264023A1 (en) * 2006-06-22 2010-10-21 National University Corporation Kitami Instutute Of Technology Method for producing metal nitride film, metal oxide film, metal carbide film or film of composite material thereof, and production apparatus therefor

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