JPS57161057A - Chemical vapor phase growth device using plasma - Google Patents

Chemical vapor phase growth device using plasma

Info

Publication number
JPS57161057A
JPS57161057A JP4912681A JP4912681A JPS57161057A JP S57161057 A JPS57161057 A JP S57161057A JP 4912681 A JP4912681 A JP 4912681A JP 4912681 A JP4912681 A JP 4912681A JP S57161057 A JPS57161057 A JP S57161057A
Authority
JP
Japan
Prior art keywords
plasma
electrode
high frequency
films
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4912681A
Other languages
Japanese (ja)
Other versions
JPS6124467B2 (en
Inventor
Hideo Kotani
Kazuo Mizuguchi
Yoshikazu Obayashi
Masahiko Denda
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4912681A priority Critical patent/JPS57161057A/en
Publication of JPS57161057A publication Critical patent/JPS57161057A/en
Publication of JPS6124467B2 publication Critical patent/JPS6124467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the rate of formation of formed films without affecting the quality of the formed films by supplying the magnetic fields substantially parallel to the surfaces of both flat plate electrodes to be applied with high frequency electric power between said electrodes thereby increasing the generation density of plasma. CONSTITUTION:The inside of a chamber 1 is evacuated through an air release port 2 to prescribed low pressure, and required reacting gases are introduced through a reacting gas introduction port 5 then through reacting gas ejection holes 6 into the chamber 1, thence a high frequency electric power 8 is operated. High frequency voltage is applied between an upper electrode 3 and a lower electrode 4 to generate plasma between both electrode 3 and 4, whereby the films formed by reaction are formed on the substrates 7 to be worked on the electrode 4. At this time, magnetic fields H which are approximately parallel to the surfaces of both electrodes 3, 4 are generated by magnets 9, 10. Then, the electrons in the formed plasma make cycloid motion and increase the probability of collision against other atoms or molecules. Namely, plasma density is increased and the forming rate of the formed films is increased.
JP4912681A 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma Granted JPS57161057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4912681A JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4912681A JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Publications (2)

Publication Number Publication Date
JPS57161057A true JPS57161057A (en) 1982-10-04
JPS6124467B2 JPS6124467B2 (en) 1986-06-11

Family

ID=12822367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4912681A Granted JPS57161057A (en) 1981-03-30 1981-03-30 Chemical vapor phase growth device using plasma

Country Status (1)

Country Link
JP (1) JPS57161057A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140130A2 (en) * 1983-09-21 1985-05-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Process and apparatus for preparing semiconductor layer
FR2555362A1 (en) * 1983-11-17 1985-05-24 France Etat METHOD AND DEVICE FOR PROCESSING A SEMICONDUCTOR MATERIAL BY PLASMA
JPS61179872A (en) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド Apparatus and method for magnetron enhanced plasma auxiliarytype chemical vapor deposition
JPS61245521A (en) * 1985-04-23 1986-10-31 Fujitsu Ltd Method for growth of aluminum film
JPS62243772A (en) * 1986-04-15 1987-10-24 Seiko Instr & Electronics Ltd Thin film synthesizing device
JPS6389671A (en) * 1986-10-03 1988-04-20 Ulvac Corp Magnetic field excitation type cvd device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926184A (en) * 1971-09-07 1974-03-08
JPS5244704A (en) * 1975-10-06 1977-04-08 Nippon Spindle Mfg Co Ltd Air supply equipment for melting furnace
JPS538377A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Apparatus for high frequency sputtering
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5558658U (en) * 1978-10-16 1980-04-21
JPS5615838A (en) * 1979-07-19 1981-02-16 Fuji Electric Co Ltd Gaseous phase growth device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926184A (en) * 1971-09-07 1974-03-08
JPS5244704A (en) * 1975-10-06 1977-04-08 Nippon Spindle Mfg Co Ltd Air supply equipment for melting furnace
JPS538377A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Apparatus for high frequency sputtering
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5558658U (en) * 1978-10-16 1980-04-21
JPS5615838A (en) * 1979-07-19 1981-02-16 Fuji Electric Co Ltd Gaseous phase growth device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140130A2 (en) * 1983-09-21 1985-05-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Process and apparatus for preparing semiconductor layer
FR2555362A1 (en) * 1983-11-17 1985-05-24 France Etat METHOD AND DEVICE FOR PROCESSING A SEMICONDUCTOR MATERIAL BY PLASMA
EP0146446A2 (en) * 1983-11-17 1985-06-26 ETAT FRANCAIS représenté par le Ministre des PTT (Centre National d'Etudes des Télécommunications) Process and apparatus for plasma treatment of semiconductor materials
JPS61179872A (en) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド Apparatus and method for magnetron enhanced plasma auxiliarytype chemical vapor deposition
JPS61245521A (en) * 1985-04-23 1986-10-31 Fujitsu Ltd Method for growth of aluminum film
JPS62243772A (en) * 1986-04-15 1987-10-24 Seiko Instr & Electronics Ltd Thin film synthesizing device
JPS6389671A (en) * 1986-10-03 1988-04-20 Ulvac Corp Magnetic field excitation type cvd device
JPH0413427B2 (en) * 1986-10-03 1992-03-09 Ulvac Corp

Also Published As

Publication number Publication date
JPS6124467B2 (en) 1986-06-11

Similar Documents

Publication Publication Date Title
US4713585A (en) Ion source
US3883413A (en) Ozone generator using pulsed electron beam and decaying electric field
US4365587A (en) Apparatus for forming organic polymer thin films utilizing microwave induced plasmas
JPS6417870A (en) Manufacture of carbon
JPS57131374A (en) Plasma etching device
JPS5713174A (en) Reactive sputtering method
JPS5915982B2 (en) Electric discharge chemical reaction device
JPS57161057A (en) Chemical vapor phase growth device using plasma
JPS5489983A (en) Device and method for vacuum deposition compound
JPS57131373A (en) Plasma etching device
JPS56121629A (en) Film forming method
JPS6490534A (en) Plasma reactor
JPS5689835A (en) Vapor phase growth apparatus
JPS56148833A (en) Plasma etching method
JPS59133364A (en) Electric discharge chemical reaction device
JPS6417869A (en) Microwave plasma chemical vapor deposition device
JPS5615838A (en) Gaseous phase growth device
JPS57123968A (en) Formation of zinc oxide film by plasma vapor phase method
JP2001064775A (en) Carbon nanotube thin film forming device and forming method
JPS6447875A (en) Plasma cvd device
JPH01306564A (en) Formation of boron nitride
JPS649890A (en) Apparatus for molecular beam growth
JPS63475A (en) Hybrid ion plating device
JPS5638819A (en) Dry etching device
KR20040088650A (en) A apparatus for synthesis of thin films