JPS538377A - Apparatus for high frequency sputtering - Google Patents
Apparatus for high frequency sputteringInfo
- Publication number
- JPS538377A JPS538377A JP8198676A JP8198676A JPS538377A JP S538377 A JPS538377 A JP S538377A JP 8198676 A JP8198676 A JP 8198676A JP 8198676 A JP8198676 A JP 8198676A JP S538377 A JPS538377 A JP S538377A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- frequency sputtering
- target
- substrate holder
- bond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To accumulate the insulating film having good covering property, by weakening the electric bond between the earthed metal part in the neighborhood of the target and the target, passing the high frequency current to the substrate holder rather than the earth and strengthening the bond between the charged particles in the plasma and the substrate holder.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8198676A JPS597352B2 (en) | 1976-07-12 | 1976-07-12 | High frequency sputtering equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8198676A JPS597352B2 (en) | 1976-07-12 | 1976-07-12 | High frequency sputtering equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS538377A true JPS538377A (en) | 1978-01-25 |
JPS597352B2 JPS597352B2 (en) | 1984-02-17 |
Family
ID=13761791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8198676A Expired JPS597352B2 (en) | 1976-07-12 | 1976-07-12 | High frequency sputtering equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS597352B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57161057A (en) * | 1981-03-30 | 1982-10-04 | Mitsubishi Electric Corp | Chemical vapor phase growth device using plasma |
JPS59182207A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Method for forming high-melting metal nitride film |
JPS6128432A (en) * | 1984-06-26 | 1986-02-08 | フランシス・ソ−・ピ−エルシ− | Mixer |
US6878249B2 (en) * | 2000-06-16 | 2005-04-12 | Anelva Corporation | High frequency sputtering device |
JP2014141720A (en) * | 2013-01-25 | 2014-08-07 | Toray Ind Inc | Dc magnetron type reactive sputtering apparatus and method |
-
1976
- 1976-07-12 JP JP8198676A patent/JPS597352B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57161057A (en) * | 1981-03-30 | 1982-10-04 | Mitsubishi Electric Corp | Chemical vapor phase growth device using plasma |
JPS6124467B2 (en) * | 1981-03-30 | 1986-06-11 | Mitsubishi Electric Corp | |
JPS59182207A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Method for forming high-melting metal nitride film |
JPS6128432A (en) * | 1984-06-26 | 1986-02-08 | フランシス・ソ−・ピ−エルシ− | Mixer |
US6878249B2 (en) * | 2000-06-16 | 2005-04-12 | Anelva Corporation | High frequency sputtering device |
JP2014141720A (en) * | 2013-01-25 | 2014-08-07 | Toray Ind Inc | Dc magnetron type reactive sputtering apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
JPS597352B2 (en) | 1984-02-17 |
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