JPS538377A - Apparatus for high frequency sputtering - Google Patents

Apparatus for high frequency sputtering

Info

Publication number
JPS538377A
JPS538377A JP8198676A JP8198676A JPS538377A JP S538377 A JPS538377 A JP S538377A JP 8198676 A JP8198676 A JP 8198676A JP 8198676 A JP8198676 A JP 8198676A JP S538377 A JPS538377 A JP S538377A
Authority
JP
Japan
Prior art keywords
high frequency
frequency sputtering
target
substrate holder
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8198676A
Other languages
Japanese (ja)
Other versions
JPS597352B2 (en
Inventor
Hisao Katsuto
Shinichi Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8198676A priority Critical patent/JPS597352B2/en
Publication of JPS538377A publication Critical patent/JPS538377A/en
Publication of JPS597352B2 publication Critical patent/JPS597352B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To accumulate the insulating film having good covering property, by weakening the electric bond between the earthed metal part in the neighborhood of the target and the target, passing the high frequency current to the substrate holder rather than the earth and strengthening the bond between the charged particles in the plasma and the substrate holder.
COPYRIGHT: (C)1978,JPO&Japio
JP8198676A 1976-07-12 1976-07-12 High frequency sputtering equipment Expired JPS597352B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8198676A JPS597352B2 (en) 1976-07-12 1976-07-12 High frequency sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8198676A JPS597352B2 (en) 1976-07-12 1976-07-12 High frequency sputtering equipment

Publications (2)

Publication Number Publication Date
JPS538377A true JPS538377A (en) 1978-01-25
JPS597352B2 JPS597352B2 (en) 1984-02-17

Family

ID=13761791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8198676A Expired JPS597352B2 (en) 1976-07-12 1976-07-12 High frequency sputtering equipment

Country Status (1)

Country Link
JP (1) JPS597352B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161057A (en) * 1981-03-30 1982-10-04 Mitsubishi Electric Corp Chemical vapor phase growth device using plasma
JPS59182207A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Method for forming high-melting metal nitride film
JPS6128432A (en) * 1984-06-26 1986-02-08 フランシス・ソ−・ピ−エルシ− Mixer
US6878249B2 (en) * 2000-06-16 2005-04-12 Anelva Corporation High frequency sputtering device
JP2014141720A (en) * 2013-01-25 2014-08-07 Toray Ind Inc Dc magnetron type reactive sputtering apparatus and method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161057A (en) * 1981-03-30 1982-10-04 Mitsubishi Electric Corp Chemical vapor phase growth device using plasma
JPS6124467B2 (en) * 1981-03-30 1986-06-11 Mitsubishi Electric Corp
JPS59182207A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Method for forming high-melting metal nitride film
JPS6128432A (en) * 1984-06-26 1986-02-08 フランシス・ソ−・ピ−エルシ− Mixer
US6878249B2 (en) * 2000-06-16 2005-04-12 Anelva Corporation High frequency sputtering device
JP2014141720A (en) * 2013-01-25 2014-08-07 Toray Ind Inc Dc magnetron type reactive sputtering apparatus and method

Also Published As

Publication number Publication date
JPS597352B2 (en) 1984-02-17

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