JPS6417870A - Manufacture of carbon - Google Patents

Manufacture of carbon

Info

Publication number
JPS6417870A
JPS6417870A JP62175559A JP17555987A JPS6417870A JP S6417870 A JPS6417870 A JP S6417870A JP 62175559 A JP62175559 A JP 62175559A JP 17555987 A JP17555987 A JP 17555987A JP S6417870 A JPS6417870 A JP S6417870A
Authority
JP
Japan
Prior art keywords
substrate
plasma
gas
hydrogen
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62175559A
Other languages
Japanese (ja)
Other versions
JPH0623430B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62175559A priority Critical patent/JPH0623430B2/en
Priority to US07/216,333 priority patent/US4871581A/en
Publication of JPS6417870A publication Critical patent/JPS6417870A/en
Priority to US07/749,618 priority patent/US5183685A/en
Priority to US07/896,914 priority patent/US5330802A/en
Publication of JPH0623430B2 publication Critical patent/JPH0623430B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE:To form a substance composed principally of carbon at high speed, by carrying out plasma gas-phase reaction by using hydrogen, a carbide gas, a nickel compound, and a germanium compound. CONSTITUTION:A substrate 10 is disposed on a holder 10', which is set in a plasma-producing space 1, and then, the space 1 is evacuated to <=about 1X10<-6>torr by means of a turbo-molecular pump 17, etc. Hydrogen 6 is intro duced into the plasma-producing region 1 in the above state, and then microwaves are applied from the outside and a magnetic field is impressed from magnets 5, 5', by which the surface of the substrate 10 is cleaned by means of a gas with high energy. Subsequently, a carbide gas (C2H2, etc.) is introduced into this reaction system by means of hydrogen 6 and also nickel carbonyl [Ni(CO)4] 7 and germane (GeH4) 8 are introduced. At this time, the substrate 10 is heated to about 800-1,000 deg.C by means of a heater 20 and plasma energy. By this method, a film composed principally of carbon can be formed on the substrate 10 at high speed.
JP62175559A 1987-07-13 1987-07-13 Carbon production method Expired - Fee Related JPH0623430B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62175559A JPH0623430B2 (en) 1987-07-13 1987-07-13 Carbon production method
US07/216,333 US4871581A (en) 1987-07-13 1988-07-08 Carbon deposition by ECR CVD using a catalytic gas
US07/749,618 US5183685A (en) 1987-07-13 1991-08-19 Diamond film deposition by ECR CVD using a catalyst gas
US07/896,914 US5330802A (en) 1987-07-13 1992-06-11 Plasma CVD of carbonaceous films on substrate having reduced metal on its surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175559A JPH0623430B2 (en) 1987-07-13 1987-07-13 Carbon production method

Publications (2)

Publication Number Publication Date
JPS6417870A true JPS6417870A (en) 1989-01-20
JPH0623430B2 JPH0623430B2 (en) 1994-03-30

Family

ID=15998197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175559A Expired - Fee Related JPH0623430B2 (en) 1987-07-13 1987-07-13 Carbon production method

Country Status (2)

Country Link
US (2) US4871581A (en)
JP (1) JPH0623430B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164797A (en) * 1987-12-19 1989-06-28 Fujitsu Ltd Method for synthesizing diamond film
EP0384667A1 (en) * 1989-02-16 1990-08-29 De Beers Industrial Diamond Division (Proprietary) Limited Diamond growth

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238705A (en) * 1987-02-24 1993-08-24 Semiconductor Energy Laboratory Co., Ltd. Carbonaceous protective films and method of depositing the same
US5183685A (en) * 1987-07-13 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Diamond film deposition by ECR CVD using a catalyst gas
US5411797A (en) * 1988-04-18 1995-05-02 Board Of Regents, The University Of Texas System Nanophase diamond films
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
US5132105A (en) * 1990-02-02 1992-07-21 Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
AU2912292A (en) * 1991-11-05 1993-06-07 Research Triangle Institute Chemical vapor deposition of diamond films using water-based plasma discharges
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6171674B1 (en) 1993-07-20 2001-01-09 Semiconductor Energy Laboratory Co., Ltd. Hard carbon coating for magnetic recording medium
US5439753A (en) * 1994-10-03 1995-08-08 Motorola, Inc. Electron emissive film
US5571615A (en) * 1995-05-16 1996-11-05 Xrystallume Ultrasmooth adherent diamond film coated article and method for making same
US5571616A (en) * 1995-05-16 1996-11-05 Crystallume Ultrasmooth adherent diamond film coated article and method for making same
US5705044A (en) 1995-08-07 1998-01-06 Akashic Memories Corporation Modular sputtering machine having batch processing and serial thin film sputtering
CA2173676A1 (en) * 1996-03-18 1997-09-19 Gregory Bak-Boychuk Diamond film deposition
JP2001526735A (en) * 1996-03-18 2001-12-18 セレステック，インコーポレーテッド Diamond film adhesion
US6082294A (en) * 1996-06-07 2000-07-04 Saint-Gobain Industrial Ceramics, Inc. Method and apparatus for depositing diamond film
JP2000269139A (en) 1999-03-16 2000-09-29 Sony Corp Formation of polycrystalline silicon film
US20020160620A1 (en) * 2001-02-26 2002-10-31 Rudolf Wagner Method for producing coated workpieces, uses and installation for the method
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
WO2003096370A1 (en) 2002-05-08 2003-11-20 Dana Corporation Methods and apparatus for forming and using plasma jets
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS5918197A (en) * 1982-07-19 1984-01-30 Sumitomo Electric Ind Ltd Gaseous phase synthesis of diamond
JPS60103099A (en) * 1983-11-04 1985-06-07 Kyocera Corp Manufacture of diamond film
SE453474B (en) * 1984-06-27 1988-02-08 Santrade Ltd COMPOUND BODY COATED WITH LAYERS OF POLYCristalline DIAMANT
JPS6113626A (en) * 1984-06-29 1986-01-21 Hitachi Ltd Plasma processor
JPS6130671A (en) * 1984-07-23 1986-02-12 Nippon Telegr & Teleph Corp <Ntt> Hard carbon film
JPS6136112A (en) * 1984-07-26 1986-02-20 Sumitomo Electric Ind Ltd Preparation of whetstone granule of poly-crystalline diamond
JPS61132507A (en) * 1984-11-30 1986-06-20 Asahi Chem Ind Co Ltd Carbonaceous fine strands
JPS61151095A (en) * 1984-12-24 1986-07-09 Showa Denko Kk Synthesis of diamond
JPH0711854B2 (en) * 1984-12-30 1995-02-08 ティーディーケイ株式会社 Magnetic recording medium
JPS61266618A (en) * 1985-05-20 1986-11-26 Asahi Chem Ind Co Ltd Production of carbon fiber
JPS6265997A (en) * 1985-09-18 1987-03-25 Nippon Soken Inc Method and apparatus for synthesizing diamond
JPS6296397A (en) * 1985-10-22 1987-05-02 Asahi Chem Ind Co Ltd Production of diamond
US5183685A (en) * 1987-07-13 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Diamond film deposition by ECR CVD using a catalyst gas
JPH06136200A (en) * 1992-09-08 1994-05-17 Mitsui Petrochem Ind Ltd Ethylene copolymer composition
JPH06296397A (en) * 1993-04-08 1994-10-21 Tokyo Electric Co Ltd Drive control equipment for stepping motor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164797A (en) * 1987-12-19 1989-06-28 Fujitsu Ltd Method for synthesizing diamond film
EP0384667A1 (en) * 1989-02-16 1990-08-29 De Beers Industrial Diamond Division (Proprietary) Limited Diamond growth

Also Published As

Publication number Publication date
JPH0623430B2 (en) 1994-03-30
US4871581A (en) 1989-10-03
US5330802A (en) 1994-07-19

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