JPS6417869A - Microwave plasma chemical vapor deposition device - Google Patents

Microwave plasma chemical vapor deposition device

Info

Publication number
JPS6417869A
JPS6417869A JP17277887A JP17277887A JPS6417869A JP S6417869 A JPS6417869 A JP S6417869A JP 17277887 A JP17277887 A JP 17277887A JP 17277887 A JP17277887 A JP 17277887A JP S6417869 A JPS6417869 A JP S6417869A
Authority
JP
Japan
Prior art keywords
permanent magnet
glass substrate
microwave
planar radiator
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17277887A
Other languages
Japanese (ja)
Other versions
JP2590112B2 (en
Inventor
Masahiro Tanaka
Kazufumi Azuma
Takeshi Watanabe
Mitsuo Nakatani
Tadashi Sonobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62172778A priority Critical patent/JP2590112B2/en
Publication of JPS6417869A publication Critical patent/JPS6417869A/en
Application granted granted Critical
Publication of JP2590112B2 publication Critical patent/JP2590112B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To treat a large-area substrate by forming a magnetic field forming means with a permanent magnet, using a planar radiator as the microwave introducing means, and setting the planar radiator between the permanent magnet and the resonance point of an electron cyclotron. CONSTITUTION:A glass substrate 12 is fixed to a substrate holder 2, the inside of a vacuum chamber 1 is evacuated to a high vacuum, gaseous oxygen is introduced from an inlet pipe 5 as the electric discharge gas, gaseous monosilane is introduced from an inlet pipe 4 as the gaseous reactant, and the inside of the vacuum chamber 1 is kept at about 7X10<-4>Torr. The glass substrate 12 is then heated to about 100 deg.C by a heater 3, and an electric current is respectively supplied to an auxiliary coil 6 and a control coil 8. A slotted plate 9 as the planar radiator set between the permanent magnet 7 and the resonance point of an electron cyclotron is impressed with a microwave from a microwave power source 10 through a coaxial line 21, and an electric discharge is started. By this method, a silicon oxide film is formed on the glass substrate 12 in almost uniform thickness.
JP62172778A 1987-07-13 1987-07-13 Microwave plasma processing equipment Expired - Lifetime JP2590112B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172778A JP2590112B2 (en) 1987-07-13 1987-07-13 Microwave plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172778A JP2590112B2 (en) 1987-07-13 1987-07-13 Microwave plasma processing equipment

Publications (2)

Publication Number Publication Date
JPS6417869A true JPS6417869A (en) 1989-01-20
JP2590112B2 JP2590112B2 (en) 1997-03-12

Family

ID=15948174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172778A Expired - Lifetime JP2590112B2 (en) 1987-07-13 1987-07-13 Microwave plasma processing equipment

Country Status (1)

Country Link
JP (1) JP2590112B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294491A (en) * 1989-05-10 1990-12-05 Hitachi Ltd Microwave plasma treating device
JP2000299199A (en) * 1999-04-13 2000-10-24 Plasma System Corp Plasma generating device and plasma processing device
KR100478404B1 (en) * 2002-03-26 2005-03-23 한국화학연구원 Apparatus For Plasma Chemical Vapor Deposition And Methode of Forming Thin Layer Utilizing The Same
CN108554334A (en) * 2018-04-20 2018-09-21 长沙新材料产业研究院有限公司 A kind of MPCVD synthesis devices and synthesis temperature control method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289875A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Thin film forming device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289875A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Thin film forming device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294491A (en) * 1989-05-10 1990-12-05 Hitachi Ltd Microwave plasma treating device
JP2000299199A (en) * 1999-04-13 2000-10-24 Plasma System Corp Plasma generating device and plasma processing device
KR100478404B1 (en) * 2002-03-26 2005-03-23 한국화학연구원 Apparatus For Plasma Chemical Vapor Deposition And Methode of Forming Thin Layer Utilizing The Same
CN108554334A (en) * 2018-04-20 2018-09-21 长沙新材料产业研究院有限公司 A kind of MPCVD synthesis devices and synthesis temperature control method

Also Published As

Publication number Publication date
JP2590112B2 (en) 1997-03-12

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