JPS61284579A - Plasma concentration type cvd device - Google Patents

Plasma concentration type cvd device

Info

Publication number
JPS61284579A
JPS61284579A JP12652085A JP12652085A JPS61284579A JP S61284579 A JPS61284579 A JP S61284579A JP 12652085 A JP12652085 A JP 12652085A JP 12652085 A JP12652085 A JP 12652085A JP S61284579 A JPS61284579 A JP S61284579A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
plasma
anode
substrate
magnetic field
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP12652085A
Other versions
JPH0465149B2 (en )
Inventor
Zenichi Yoshida
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To gather high-density plasma to just above a substrate and to deposit uniformly a thin film having high quality on the substrate at a high speed by bending perpendicularly the plasma radiated from the circumference of a vacuum vessel by using a cusp magnetic field thereby concentrating the plasma to the substrate.
CONSTITUTION: The plasma of a large area is formed from an annular slit when nitrogen is introduced as the gas to be ionized from plural gas introducing ports 16 of the vacuum vessel 15 toward an annular plasma source 21 in the direction X. The intensity of the magnetic field enough to conduct electric discharge is assured in two intermediate electrodes 18, 19 by making use of the cusp magnetic field generated by two annular magnets 20 in which equiv. currents flow in opposite directions. An anode 23 having a powerful magnet 24 is disposed perpendicularly to the initial plasma flow to concentrate the plasma flow to the neighborhood of the anode 23. For example, a gaseous silane is passed from the ports 26 near the anode 23 by which the nitride film is uniformly deposited on the anode 23.
COPYRIGHT: (C)1986,JPO&Japio
JP12652085A 1985-06-11 1985-06-11 Expired - Fee Related JPH0465149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12652085A JPH0465149B2 (en) 1985-06-11 1985-06-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12652085A JPH0465149B2 (en) 1985-06-11 1985-06-11

Publications (2)

Publication Number Publication Date
JPS61284579A true true JPS61284579A (en) 1986-12-15
JPH0465149B2 JPH0465149B2 (en) 1992-10-19

Family

ID=14937239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12652085A Expired - Fee Related JPH0465149B2 (en) 1985-06-11 1985-06-11

Country Status (1)

Country Link
JP (1) JPH0465149B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156536A (en) * 1986-12-20 1988-06-29 Toobi:Kk Reactive plasma beam film forming device
US4941430A (en) * 1987-05-01 1990-07-17 Nihon Sinku Gijutsu Kabusiki Kaisha Apparatus for forming reactive deposition film
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film
JPS55117856A (en) * 1979-03-02 1980-09-10 Hitachi Ltd Method and apparatus for separating impurities
JPS59205470A (en) * 1983-05-02 1984-11-21 Kowa Eng Kk Apparatus and method for forming hard film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film
JPS55117856A (en) * 1979-03-02 1980-09-10 Hitachi Ltd Method and apparatus for separating impurities
JPS59205470A (en) * 1983-05-02 1984-11-21 Kowa Eng Kk Apparatus and method for forming hard film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156536A (en) * 1986-12-20 1988-06-29 Toobi:Kk Reactive plasma beam film forming device
JPH0757313B2 (en) * 1986-12-20 1995-06-21 株式会社ト−ビ Reactive Purazumabi - No film forming apparatus
US4941430A (en) * 1987-05-01 1990-07-17 Nihon Sinku Gijutsu Kabusiki Kaisha Apparatus for forming reactive deposition film
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus

Also Published As

Publication number Publication date Type
JPH0465149B2 (en) 1992-10-19 grant

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees