JPS6446916A - Vacuum thin-film formation device - Google Patents

Vacuum thin-film formation device

Info

Publication number
JPS6446916A
JPS6446916A JP20302887A JP20302887A JPS6446916A JP S6446916 A JPS6446916 A JP S6446916A JP 20302887 A JP20302887 A JP 20302887A JP 20302887 A JP20302887 A JP 20302887A JP S6446916 A JPS6446916 A JP S6446916A
Authority
JP
Japan
Prior art keywords
plasma
gas
pretreatment
substrate
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20302887A
Other languages
Japanese (ja)
Inventor
Hiroshi Fujioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20302887A priority Critical patent/JPS6446916A/en
Publication of JPS6446916A publication Critical patent/JPS6446916A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable pretreatment having no defect at a high temperature or plasma without damaging a substrate by applying microwaves from a magnetron, etc., or high-frequency discharge from a high-frequency power under, a condition, in which a gas for pretreatment at low pressure flows at low pressure, and generating gas plasma. CONSTITUTION:A transport pipe 11, a microwave power 12, a waveguide 13 and an inflow pipe 14 for a gas (the arrow B) for pretreatment are installed to a conventional plasma CVD device. Microwaves induced by the waveguide 13 are applied to the gas from the introducing pipe 14, and gas plasma 15 is generated. Neutral active particles are formed when the plasma is generated, and the particles pass through the transport pipe 11 and flow into a reaction chamber 1, and dry-etch the surface of a substrate. Accordingly, pretreatment having no defect at a high temperature or plasma is enabled without damaging the substrate.
JP20302887A 1987-08-17 1987-08-17 Vacuum thin-film formation device Pending JPS6446916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20302887A JPS6446916A (en) 1987-08-17 1987-08-17 Vacuum thin-film formation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20302887A JPS6446916A (en) 1987-08-17 1987-08-17 Vacuum thin-film formation device

Publications (1)

Publication Number Publication Date
JPS6446916A true JPS6446916A (en) 1989-02-21

Family

ID=16467151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20302887A Pending JPS6446916A (en) 1987-08-17 1987-08-17 Vacuum thin-film formation device

Country Status (1)

Country Link
JP (1) JPS6446916A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0415910A (en) * 1990-05-10 1992-01-21 Canon Inc Formation of etching pattern
WO1994029494A1 (en) * 1993-06-04 1994-12-22 Applied Science Technology Microwave plasma reactor
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
WO2001080290A3 (en) * 2000-04-14 2002-04-04 Applied Materials Inc A method of operating a dual chamber reactor with neutral density decoupled from ion density

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0415910A (en) * 1990-05-10 1992-01-21 Canon Inc Formation of etching pattern
WO1994029494A1 (en) * 1993-06-04 1994-12-22 Applied Science Technology Microwave plasma reactor
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
WO2001080290A3 (en) * 2000-04-14 2002-04-04 Applied Materials Inc A method of operating a dual chamber reactor with neutral density decoupled from ion density

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