JPS5773174A - Manufacturing apparatus for coating film - Google Patents

Manufacturing apparatus for coating film

Info

Publication number
JPS5773174A
JPS5773174A JP14902580A JP14902580A JPS5773174A JP S5773174 A JPS5773174 A JP S5773174A JP 14902580 A JP14902580 A JP 14902580A JP 14902580 A JP14902580 A JP 14902580A JP S5773174 A JPS5773174 A JP S5773174A
Authority
JP
Japan
Prior art keywords
substrates
chamber
furnace
gas
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14902580A
Other languages
Japanese (ja)
Other versions
JPH0325928B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP14902580A priority Critical patent/JPS5773174A/en
Publication of JPS5773174A publication Critical patent/JPS5773174A/en
Publication of JPH0325928B2 publication Critical patent/JPH0325928B2/ja
Priority to JP4037168A priority patent/JP2626701B2/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Abstract

PURPOSE:To form uniform coating films on many substrates in a reaction furnace at a relatively low temp. by installing a pair of electrodes for capacitive coupling at both sides of a heater for heating the substrates at the outside of the furnace and a plasma discharge means in front of the substrates. CONSTITUTION:Substrates 1- are mounted on a boat 2 in parallel, sealed in a reaction furnace 3, and heated with a heater 4 for resistance heating. The furnace 3 is evacuated from 13 with a vacuum pump 16 through valves 14, 15 and a reactive gas is introduced from 8 or 9 into a position of a mixing chamber 17 in the furnace in front of and away from the substrates 1. An inert gas or gaseous nitride or oxide is further introduced form 11 or 12, and the carrier gas is ionized in a waveguide with a microwave generator 5 in the activation chamber 7. The reactive gas is supplied with charges from the ionized gas in the chamber 17. In order to prevent the gas from colliding against the wall of the chamber or from forming a film or nuclei even in case of colliding, the wall of the chamber is cooled.
JP14902580A 1980-10-24 1980-10-24 Manufacturing apparatus for coating film Granted JPS5773174A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14902580A JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film
JP4037168A JP2626701B2 (en) 1980-10-24 1992-01-28 MIS type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14902580A JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4037168A Division JP2626701B2 (en) 1980-10-24 1992-01-28 MIS type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5773174A true JPS5773174A (en) 1982-05-07
JPH0325928B2 JPH0325928B2 (en) 1991-04-09

Family

ID=15466017

Family Applications (2)

Application Number Title Priority Date Filing Date
JP14902580A Granted JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film
JP4037168A Expired - Lifetime JP2626701B2 (en) 1980-10-24 1992-01-28 MIS type field effect semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4037168A Expired - Lifetime JP2626701B2 (en) 1980-10-24 1992-01-28 MIS type field effect semiconductor device

Country Status (1)

Country Link
JP (2) JPS5773174A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043485A (en) * 1983-08-19 1985-03-08 Mitsui Toatsu Chem Inc Formation of amorphous silicon film
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
JPS60129132U (en) * 1984-02-06 1985-08-30 株式会社日立国際電気 Arrangement of electrode plate and substrate of plasma vapor phase epitaxy equipment
CN102732835A (en) * 2012-07-13 2012-10-17 中国建材国际工程集团有限公司 Dual-gas-supply inflation system applied to vacuum coating equipment and inflation method of system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT1877219E (en) * 2005-03-15 2011-09-19 Htc Sweden Ab Method for maintaining a hard, smooth floor surface comprising a polymer material
CN103828061B (en) * 2011-10-07 2018-02-13 应用材料公司 Carry out the method for deposit silicon-containing materials using argon-dilution

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110283A (en) * 1974-02-06 1975-08-30
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5391085A (en) * 1977-01-24 1978-08-10 Hitachi Ltd Deposition apparatus of gas phase chemical reaction substance utilized plasma discharge
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054919B2 (en) * 1976-08-06 1985-12-02 株式会社日立製作所 low pressure reactor
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPH0325928A (en) * 1989-06-23 1991-02-04 Nec Corp Lamp type thermal treatment equipment for semiconductor wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110283A (en) * 1974-02-06 1975-08-30
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5391085A (en) * 1977-01-24 1978-08-10 Hitachi Ltd Deposition apparatus of gas phase chemical reaction substance utilized plasma discharge
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043485A (en) * 1983-08-19 1985-03-08 Mitsui Toatsu Chem Inc Formation of amorphous silicon film
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
JPH0517312B2 (en) * 1983-12-20 1993-03-08 Canon Kk
JPS60129132U (en) * 1984-02-06 1985-08-30 株式会社日立国際電気 Arrangement of electrode plate and substrate of plasma vapor phase epitaxy equipment
CN102732835A (en) * 2012-07-13 2012-10-17 中国建材国际工程集团有限公司 Dual-gas-supply inflation system applied to vacuum coating equipment and inflation method of system

Also Published As

Publication number Publication date
JP2626701B2 (en) 1997-07-02
JPH0562919A (en) 1993-03-12
JPH0325928B2 (en) 1991-04-09

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