JPS56123377A - Plasma cleaning and etching method - Google Patents

Plasma cleaning and etching method

Info

Publication number
JPS56123377A
JPS56123377A JP2638780A JP2638780A JPS56123377A JP S56123377 A JPS56123377 A JP S56123377A JP 2638780 A JP2638780 A JP 2638780A JP 2638780 A JP2638780 A JP 2638780A JP S56123377 A JPS56123377 A JP S56123377A
Authority
JP
Japan
Prior art keywords
substrates
inert gas
furnace
plasma cleaning
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2638780A
Other languages
Japanese (ja)
Other versions
JPS5914549B2 (en
Inventor
Shunpei Yamazaki
Yujiro Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP55026387A priority Critical patent/JPS5914549B2/en
Publication of JPS56123377A publication Critical patent/JPS56123377A/en
Publication of JPS5914549B2 publication Critical patent/JPS5914549B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To sufficiently prevent the surfaces of substrates from pollution by placing the substrates in an atmosphere of an inert gas or the gas and a specified amount of hydrogen activated with induced energy to carry out plasma cleaning and etching.
CONSTITUTION: A plurality of semiconductor substrates 10 are put in boat 9, and boat 9 is set in reaction furnace 7. Furnace 7 is evacuated to the necessary vacuum degree with rotary pump 13, and an inert gas is introduced from inert gas inlet 3. Hydrogen may also be introduced from hydrogen inlet 5 and mixed into the inert gas with mixer 6 by 0.5W50vol%. Thus, the internal pressure of furnace 7 is adjusted to about 0.1W200Torr, and then substrates 10 are heated to a predetermined temp. with substrate heater 8. By applying high frequency energy or microwave energy from induced energy generator 1, the gas in furnace 7 is activated to a plasma state for plasma cleaning to etch the surfaces of substrates 10.
COPYRIGHT: (C)1981,JPO&Japio
JP55026387A 1980-03-03 1980-03-03 Plasma cleaning etch method Expired JPS5914549B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55026387A JPS5914549B2 (en) 1980-03-03 1980-03-03 Plasma cleaning etch method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55026387A JPS5914549B2 (en) 1980-03-03 1980-03-03 Plasma cleaning etch method

Publications (2)

Publication Number Publication Date
JPS56123377A true JPS56123377A (en) 1981-09-28
JPS5914549B2 JPS5914549B2 (en) 1984-04-05

Family

ID=12192115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55026387A Expired JPS5914549B2 (en) 1980-03-03 1980-03-03 Plasma cleaning etch method

Country Status (1)

Country Link
JP (1) JPS5914549B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JPS5911629A (en) * 1982-07-12 1984-01-21 Toshiba Corp Surface cleaning method
JPS59215728A (en) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd Optical cleaning method of surface of semiconductor
JPH0250985A (en) * 1988-08-11 1990-02-20 Semiconductor Energy Lab Co Ltd Cleaning method of equipment for forming film made of carbon or material mainly composed of carbon
US5691117A (en) * 1993-12-22 1997-11-25 International Business Machines Corporation Method for stripping photoresist employing a hot hydrogen atmosphere
US5900351A (en) * 1995-01-17 1999-05-04 International Business Machines Corporation Method for stripping photoresist
US5900288A (en) * 1994-01-03 1999-05-04 Xerox Corporation Method for improving substrate adhesion in fluoropolymer deposition processes
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
CN108754520A (en) * 2018-06-29 2018-11-06 四川大学 Carbide surface coating removal method and apparatus
JP2018182193A (en) * 2017-04-19 2018-11-15 Ｊｘ金属株式会社 Semiconductor device, and method for manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201812A (en) * 1994-01-11 1995-08-04 Tadahiro Omi Solid surface treatment apparatus, method, passive state film forming apparatus, method & process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187434A (en) * 1975-01-31 1976-07-31 Citizen Watch Co Ltd Kibanno kuriininguhoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187434A (en) * 1975-01-31 1976-07-31 Citizen Watch Co Ltd Kibanno kuriininguhoho

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JPH0133933B2 (en) * 1980-10-16 1989-07-17 Tokyo Shibaura Electric Co
JPS5911629A (en) * 1982-07-12 1984-01-21 Toshiba Corp Surface cleaning method
JPS59215728A (en) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd Optical cleaning method of surface of semiconductor
JPH0250985A (en) * 1988-08-11 1990-02-20 Semiconductor Energy Lab Co Ltd Cleaning method of equipment for forming film made of carbon or material mainly composed of carbon
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US5691117A (en) * 1993-12-22 1997-11-25 International Business Machines Corporation Method for stripping photoresist employing a hot hydrogen atmosphere
US5900288A (en) * 1994-01-03 1999-05-04 Xerox Corporation Method for improving substrate adhesion in fluoropolymer deposition processes
US5900351A (en) * 1995-01-17 1999-05-04 International Business Machines Corporation Method for stripping photoresist
JP2018182193A (en) * 2017-04-19 2018-11-15 Ｊｘ金属株式会社 Semiconductor device, and method for manufacturing method thereof
CN108754520A (en) * 2018-06-29 2018-11-06 四川大学 Carbide surface coating removal method and apparatus

Also Published As

Publication number Publication date
JPS5914549B2 (en) 1984-04-05

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