JPS5776188A - Gas plasma etching device - Google Patents

Gas plasma etching device

Info

Publication number
JPS5776188A
JPS5776188A JP15156280A JP15156280A JPS5776188A JP S5776188 A JPS5776188 A JP S5776188A JP 15156280 A JP15156280 A JP 15156280A JP 15156280 A JP15156280 A JP 15156280A JP S5776188 A JPS5776188 A JP S5776188A
Authority
JP
Japan
Prior art keywords
gas
chamber
gas plasma
etching
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15156280A
Other languages
Japanese (ja)
Inventor
Takeshi Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15156280A priority Critical patent/JPS5776188A/en
Publication of JPS5776188A publication Critical patent/JPS5776188A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To perform a local etching on a base plate by a method in which a gas plasma-generating chamber and a gas etching chamber of a low gas pressure are provided, and the gas plasma is locally jetted onto the film of the base plate in the etching chamber through a transport duct.
CONSTITUTION: A base plate 4 whose surface is provided with a metal (e.g., Cr) film is placed on a base 3 inside a gas etching chamber 2, and the chamber 2 is evacuated through an exhaust pipe 12. On the other hand, the gas plasma chamber 1 is evacuated and CCl4 gas is introduced into the chamber 1 through an inlet duct 8. At this time, gas pressure in the gas etching chamber 2 is lowered through the gas plasma-generating chamber 1. Then, a high frequency voltage is applied between electrodes 9 and 10 to excite CCl4 gas and thereby to generate CCl4 gas plasma. When opening an electromagnetic valve 6, the gas plasma goes through a pipe 5 into the etching chamber 2 of a low gas pressure and is jetted locally onto the metal film of the base plate 4. Thus, a local etching can be effectively performed.
COPYRIGHT: (C)1982,JPO&Japio
JP15156280A 1980-10-29 1980-10-29 Gas plasma etching device Pending JPS5776188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15156280A JPS5776188A (en) 1980-10-29 1980-10-29 Gas plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15156280A JPS5776188A (en) 1980-10-29 1980-10-29 Gas plasma etching device

Publications (1)

Publication Number Publication Date
JPS5776188A true JPS5776188A (en) 1982-05-13

Family

ID=15521237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15156280A Pending JPS5776188A (en) 1980-10-29 1980-10-29 Gas plasma etching device

Country Status (1)

Country Link
JP (1) JPS5776188A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613401A (en) * 1984-08-24 1986-09-23 Fujitsu Limited Method for dry etching a chromium or chromium oxide film
JPH0265133A (en) * 1988-08-30 1990-03-05 Sony Corp Dry etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5277840A (en) * 1975-12-24 1977-06-30 Tokyo Shibaura Electric Co Device for chemical dry etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5277840A (en) * 1975-12-24 1977-06-30 Tokyo Shibaura Electric Co Device for chemical dry etching

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613401A (en) * 1984-08-24 1986-09-23 Fujitsu Limited Method for dry etching a chromium or chromium oxide film
JPH0265133A (en) * 1988-08-30 1990-03-05 Sony Corp Dry etching method

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