JPS5524941A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS5524941A
JPS5524941A JP9678678A JP9678678A JPS5524941A JP S5524941 A JPS5524941 A JP S5524941A JP 9678678 A JP9678678 A JP 9678678A JP 9678678 A JP9678678 A JP 9678678A JP S5524941 A JPS5524941 A JP S5524941A
Authority
JP
Japan
Prior art keywords
etching
chamber
plasma
etched
generating chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9678678A
Other languages
Japanese (ja)
Other versions
JPS5534229B2 (en
Inventor
Takeo Kaminaga
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9678678A priority Critical patent/JPS5524941A/en
Publication of JPS5524941A publication Critical patent/JPS5524941A/en
Publication of JPS5534229B2 publication Critical patent/JPS5534229B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To control the completion of etching automatically and exactly by detecting a chemical luminescence generated from material being etched during etching operation in a dry etching apparatus separated into a plasma generating chamber and an etching chamber.
CONSTITUTION: The gas plasma-generating chamber 1 and the etching chamber 2, both being connected to each other with the orifice 3, are vacuumized, and CF4 and O2 are supplied to the plasma-generating chamber 1 and its vaccum degree is regulated to approx. 0.3 torr. A high frequency voltage is applied across the electrodes 5 and 6 to dissociate gas by discharge and the gas plasma 8 so generated is introduced into the etching chamber 2 where the material 9 to be etched is etched. A chemical luminescence generated upon the etching operation is detected by the photo-sensor 11 and then put in the comparator 13 through the amplifier 12. At the comparator 13, it is compared with a set value from setter 14 and the completion of etching is detected in the form of a compared value. Then, the relay 15 is operat ed to stop the application of voltage from the high frequency power source 7 and thereby to stop etching automatically and exactly.
COPYRIGHT: (C)1980,JPO&Japio
JP9678678A 1978-08-09 1978-08-09 Dry etching apparatus Granted JPS5524941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9678678A JPS5524941A (en) 1978-08-09 1978-08-09 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9678678A JPS5524941A (en) 1978-08-09 1978-08-09 Dry etching apparatus

Publications (2)

Publication Number Publication Date
JPS5524941A true JPS5524941A (en) 1980-02-22
JPS5534229B2 JPS5534229B2 (en) 1980-09-05

Family

ID=14174312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9678678A Granted JPS5524941A (en) 1978-08-09 1978-08-09 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS5524941A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125841A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Plasma-etching method
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching
JPS5759332A (en) * 1980-09-27 1982-04-09 Fujitsu Ltd Method for detecting finishing time of dry etching reaction
JPS58215030A (en) * 1982-06-08 1983-12-14 Kokusai Electric Co Ltd Detector for dry etching finishing time of semiconductor substrate
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125841A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Plasma-etching method
JPS6348176B2 (en) * 1980-03-07 1988-09-28 Fujitsu Ltd
JPS56129325A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Dry etching
JPH0237089B2 (en) * 1980-03-14 1990-08-22 Fujitsu Ltd
JPS5759332A (en) * 1980-09-27 1982-04-09 Fujitsu Ltd Method for detecting finishing time of dry etching reaction
JPS58215030A (en) * 1982-06-08 1983-12-14 Kokusai Electric Co Ltd Detector for dry etching finishing time of semiconductor substrate
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

Also Published As

Publication number Publication date
JPS5534229B2 (en) 1980-09-05

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