JPS5621330A - Method of dry etching - Google Patents

Method of dry etching

Info

Publication number
JPS5621330A
JPS5621330A JP9771879A JP9771879A JPS5621330A JP S5621330 A JPS5621330 A JP S5621330A JP 9771879 A JP9771879 A JP 9771879A JP 9771879 A JP9771879 A JP 9771879A JP S5621330 A JPS5621330 A JP S5621330A
Authority
JP
Japan
Prior art keywords
gas
etching
silicon nitride
nitrogen
etching gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9771879A
Other languages
Japanese (ja)
Inventor
Naoyoshi Sagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9771879A priority Critical patent/JPS5621330A/en
Publication of JPS5621330A publication Critical patent/JPS5621330A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To greatly improve the etching speed and selectivity of silicon nitride, by introducing nitrogen gas into mixed gas of Freon and oxygen as an etching gas source. CONSTITUTION:The mixed gas comprising fluorinated carbon gas such as Freon, oxygen and nitrogen is introduced into an etching gas forming chamber 18 through a gas inlet port 22 and stimulated by microwaves emitted from a microwave generator 11 to produce the etching gas. The etching gas is introduced into a reaction chamber 20 through a gas pipe 19. An etched material 25 with the silicon nitride film is loated on a table 24 in the reaction chamber 20. After the material 25 is treated with the etching gas, the gas is discharged through an exhaust port 27. Since the nitrogen is introduced into the etching gas, the etching speed and selectivity of the silicon nitride are greatly improved and the quantity of undercut at the etching of the silicon nitride film is reduced.
JP9771879A 1979-07-31 1979-07-31 Method of dry etching Pending JPS5621330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9771879A JPS5621330A (en) 1979-07-31 1979-07-31 Method of dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9771879A JPS5621330A (en) 1979-07-31 1979-07-31 Method of dry etching

Publications (1)

Publication Number Publication Date
JPS5621330A true JPS5621330A (en) 1981-02-27

Family

ID=14199664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9771879A Pending JPS5621330A (en) 1979-07-31 1979-07-31 Method of dry etching

Country Status (1)

Country Link
JP (1) JPS5621330A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713744A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Manufacture of semiconductor device
JPS6399533A (en) * 1986-05-31 1988-04-30 Toshiba Corp Method and apparatus for dry etching of silicon nitride film
JPS63102232A (en) * 1986-10-17 1988-05-07 Tokuda Seisakusho Ltd Dry etching device
JPH07204708A (en) * 1994-01-11 1995-08-08 Kyoei Seiko Kk Production of hot coil
US5877090A (en) * 1997-06-03 1999-03-02 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH3 or SF6 and HBR and N2
JP2014197603A (en) * 2013-03-29 2014-10-16 東京エレクトロン株式会社 Etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713744A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Manufacture of semiconductor device
JPS6399533A (en) * 1986-05-31 1988-04-30 Toshiba Corp Method and apparatus for dry etching of silicon nitride film
JPS63102232A (en) * 1986-10-17 1988-05-07 Tokuda Seisakusho Ltd Dry etching device
JPH07204708A (en) * 1994-01-11 1995-08-08 Kyoei Seiko Kk Production of hot coil
US5877090A (en) * 1997-06-03 1999-03-02 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH3 or SF6 and HBR and N2
JP2014197603A (en) * 2013-03-29 2014-10-16 東京エレクトロン株式会社 Etching method

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