JPS55164077A - Method for etching by gas plasma - Google Patents

Method for etching by gas plasma

Info

Publication number
JPS55164077A
JPS55164077A JP7287479A JP7287479A JPS55164077A JP S55164077 A JPS55164077 A JP S55164077A JP 7287479 A JP7287479 A JP 7287479A JP 7287479 A JP7287479 A JP 7287479A JP S55164077 A JPS55164077 A JP S55164077A
Authority
JP
Japan
Prior art keywords
gas
etching
plasma
oxide film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7287479A
Other languages
Japanese (ja)
Other versions
JPS6151036B2 (en
Inventor
Hiroyasu Toyoda
Hiroyoshi Komiya
Hideaki Itakura
Mineto Tobinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7287479A priority Critical patent/JPS55164077A/en
Publication of JPS55164077A publication Critical patent/JPS55164077A/en
Publication of JPS6151036B2 publication Critical patent/JPS6151036B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To raise greatly etching speed as compared with the conventional methods by etching silicon oxide film of an Si substrate by a gas plasma-etching method using a mixed gas composed of a hydrogen-containing fluorine compound and an acid gas.
CONSTITUTION: A material 4 to be etched, having the silicon oxide film, is put in a reaction tank 3 of a gas plasma etching device provided with plate-like high frequency power sources 1 and 2 and then etched by a usual gas plasma-etching method by introducing an etching gas of a hydrogen-containing fluorine compound, e.g., CHF3, etc., to which is added 0.5W17%, preferably 2W8%, O2 gas, or a mixed gas consisting CF4 gas, H2 gas, and O2 gas, through a pipe 6. Thus, the etching speed for the silicon oxide film can be greatly raised by means of oxidation radicals, and also the polymerization of the radicals taking part in polymerization reactions can be prevented by letting them react with oxygen radical even under a plasma-generating condition in which plasma-caused polymerization is apt to occur.
COPYRIGHT: (C)1980,JPO&Japio
JP7287479A 1979-06-08 1979-06-08 Method for etching by gas plasma Granted JPS55164077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7287479A JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7287479A JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Publications (2)

Publication Number Publication Date
JPS55164077A true JPS55164077A (en) 1980-12-20
JPS6151036B2 JPS6151036B2 (en) 1986-11-07

Family

ID=13501906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7287479A Granted JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Country Status (1)

Country Link
JP (1) JPS55164077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US6884666B2 (en) 1999-08-31 2005-04-26 Fujitsu Limited Thin film transistor, liquid crystal display substrate, and their manufacture methods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02129037U (en) * 1989-04-01 1990-10-24

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.VAC.SCI.TECHNOL.=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US6884666B2 (en) 1999-08-31 2005-04-26 Fujitsu Limited Thin film transistor, liquid crystal display substrate, and their manufacture methods
US6912019B2 (en) * 1999-08-31 2005-06-28 Fujitsu Limited Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS6151036B2 (en) 1986-11-07

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