JPS55164077A - Method for etching by gas plasma - Google Patents
Method for etching by gas plasmaInfo
- Publication number
- JPS55164077A JPS55164077A JP7287479A JP7287479A JPS55164077A JP S55164077 A JPS55164077 A JP S55164077A JP 7287479 A JP7287479 A JP 7287479A JP 7287479 A JP7287479 A JP 7287479A JP S55164077 A JPS55164077 A JP S55164077A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- plasma
- oxide film
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To raise greatly etching speed as compared with the conventional methods by etching silicon oxide film of an Si substrate by a gas plasma-etching method using a mixed gas composed of a hydrogen-containing fluorine compound and an acid gas.
CONSTITUTION: A material 4 to be etched, having the silicon oxide film, is put in a reaction tank 3 of a gas plasma etching device provided with plate-like high frequency power sources 1 and 2 and then etched by a usual gas plasma-etching method by introducing an etching gas of a hydrogen-containing fluorine compound, e.g., CHF3, etc., to which is added 0.5W17%, preferably 2W8%, O2 gas, or a mixed gas consisting CF4 gas, H2 gas, and O2 gas, through a pipe 6. Thus, the etching speed for the silicon oxide film can be greatly raised by means of oxidation radicals, and also the polymerization of the radicals taking part in polymerization reactions can be prevented by letting them react with oxygen radical even under a plasma-generating condition in which plasma-caused polymerization is apt to occur.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7287479A JPS55164077A (en) | 1979-06-08 | 1979-06-08 | Method for etching by gas plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7287479A JPS55164077A (en) | 1979-06-08 | 1979-06-08 | Method for etching by gas plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55164077A true JPS55164077A (en) | 1980-12-20 |
JPS6151036B2 JPS6151036B2 (en) | 1986-11-07 |
Family
ID=13501906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7287479A Granted JPS55164077A (en) | 1979-06-08 | 1979-06-08 | Method for etching by gas plasma |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55164077A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190320A (en) * | 1981-05-20 | 1982-11-22 | Toshiba Corp | Dry etching method |
US6884666B2 (en) | 1999-08-31 | 2005-04-26 | Fujitsu Limited | Thin film transistor, liquid crystal display substrate, and their manufacture methods |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02129037U (en) * | 1989-04-01 | 1990-10-24 |
-
1979
- 1979-06-08 JP JP7287479A patent/JPS55164077A/en active Granted
Non-Patent Citations (1)
Title |
---|
J.VAC.SCI.TECHNOL.=1979 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190320A (en) * | 1981-05-20 | 1982-11-22 | Toshiba Corp | Dry etching method |
US6884666B2 (en) | 1999-08-31 | 2005-04-26 | Fujitsu Limited | Thin film transistor, liquid crystal display substrate, and their manufacture methods |
US6912019B2 (en) * | 1999-08-31 | 2005-06-28 | Fujitsu Limited | Method of manufacturing a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6151036B2 (en) | 1986-11-07 |
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