JPS57108267A - Etching method - Google Patents

Etching method

Info

Publication number
JPS57108267A
JPS57108267A JP18410180A JP18410180A JPS57108267A JP S57108267 A JPS57108267 A JP S57108267A JP 18410180 A JP18410180 A JP 18410180A JP 18410180 A JP18410180 A JP 18410180A JP S57108267 A JPS57108267 A JP S57108267A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
etching
sio
si
gas
flon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18410180A
Inventor
Akira Takaichi
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To easily control the end point of etching by using C6F6 having a high selection retio as an etching gas when an SiO2 film on Si is etched in the manufacture of a semiconductor integrated circuit.
CONSTITUTION: When an SiO2 on Si is etched with an etching apparatus having a parallel and flat plate type electrode structure, hexafluorobenzene C6F6 is used as an etching gas. The selection ratio (SiO2 etching speed/Si etching speed) of C6F6 is 8.0 which is much higher than the selection ratio of "Flon 14" or "Flon 116" under the etching conditions of 0.05 Torr pressure, 25 cc/min flow rate of the gas, 200W high frequency power and a carbon table.
COPYRIGHT: (C)1982,JPO&Japio
JP18410180A 1980-12-26 1980-12-26 Etching method Pending JPS57108267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18410180A JPS57108267A (en) 1980-12-26 1980-12-26 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18410180A JPS57108267A (en) 1980-12-26 1980-12-26 Etching method

Publications (1)

Publication Number Publication Date
JPS57108267A true true JPS57108267A (en) 1982-07-06

Family

ID=16147405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18410180A Pending JPS57108267A (en) 1980-12-26 1980-12-26 Etching method

Country Status (1)

Country Link
JP (1) JPS57108267A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
JPH10189553A (en) * 1996-10-30 1998-07-21 Agency Of Ind Science & Technol Dryetching method
WO2000030168A1 (en) * 1998-11-16 2000-05-25 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window
US6174451B1 (en) 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
JPH10189553A (en) * 1996-10-30 1998-07-21 Agency Of Ind Science & Technol Dryetching method
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6174451B1 (en) 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
WO2000030168A1 (en) * 1998-11-16 2000-05-25 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6613689B2 (en) 2000-03-10 2003-09-02 Applied Materials, Inc Magnetically enhanced plasma oxide etch using hexafluorobutadiene

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