JPS57155732A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS57155732A
JPS57155732A JP4129181A JP4129181A JPS57155732A JP S57155732 A JPS57155732 A JP S57155732A JP 4129181 A JP4129181 A JP 4129181A JP 4129181 A JP4129181 A JP 4129181A JP S57155732 A JPS57155732 A JP S57155732A
Authority
JP
Japan
Prior art keywords
gas
oxygen
mixing
benzene
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4129181A
Other languages
Japanese (ja)
Other versions
JPH0160938B2 (en
Inventor
Ryohei Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4129181A priority Critical patent/JPS57155732A/en
Publication of JPS57155732A publication Critical patent/JPS57155732A/en
Publication of JPH0160938B2 publication Critical patent/JPH0160938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To safely operate and to freely select selective ratio as well by a method wherein gas for plasma etching is formed by mixing vapor phase hexaphloro benzene with freon gas or oxygen gas. CONSTITUTION:Hexafluorobenzene C6F6 easily permits to generate CF3<+>, CF2<++> which etch a silicon oxide film. However, in the case of single gas only, the amount of the generation of the CF3<+>, CF2<++> becomes excessive. Therefore, gas mixing the hexafluoro benzene (C6F6) with freon gas or oxygen is flowed into a chamber to control the amount of the generation. The mixing ratio of the hexafluoro benzene to freon gas or oxygen can be selected at any value in accordance with etching condition such as selective ratio. And as to etching for the silicon oxide film, the vicinity of the mixing ratio of about 1:1 is perferable and dilution is previously made by inactive gas such as argon, helium or the like.
JP4129181A 1981-03-20 1981-03-20 Dry etching Granted JPS57155732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4129181A JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4129181A JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Publications (2)

Publication Number Publication Date
JPS57155732A true JPS57155732A (en) 1982-09-25
JPH0160938B2 JPH0160938B2 (en) 1989-12-26

Family

ID=12604338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4129181A Granted JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Country Status (1)

Country Link
JP (1) JPS57155732A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189553A (en) * 1996-10-30 1998-07-21 Agency Of Ind Science & Technol Dryetching method
US5990017A (en) * 1991-06-27 1999-11-23 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
WO2000030168A1 (en) * 1998-11-16 2000-05-25 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6083412A (en) * 1993-10-15 2000-07-04 Applied Materials, Inc. Plasma etch apparatus with heated scavenging surfaces
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6174451B1 (en) 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6217785B1 (en) * 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6361644B1 (en) 1995-08-30 2002-03-26 Applied Materials, Inc. Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
WO2001068939A3 (en) * 2000-03-10 2002-05-30 Applied Materials Inc Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US6444084B1 (en) 1996-02-02 2002-09-03 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018016375A1 (en) 2016-07-20 2018-01-25 昭和電工株式会社 Gas supply apparatus and gas supply method

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US5990017A (en) * 1991-06-27 1999-11-23 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6454898B1 (en) 1991-06-27 2002-09-24 Applied Materials, Inc. Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6623596B1 (en) 1992-12-01 2003-09-23 Applied Materials, Inc Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6217785B1 (en) * 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor
US6083412A (en) * 1993-10-15 2000-07-04 Applied Materials, Inc. Plasma etch apparatus with heated scavenging surfaces
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6361644B1 (en) 1995-08-30 2002-03-26 Applied Materials, Inc. Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
US6444084B1 (en) 1996-02-02 2002-09-03 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6524432B1 (en) 1996-02-02 2003-02-25 Applied Materials Inc. Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6218312B1 (en) 1996-05-13 2001-04-17 Applied Materials Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6365063B2 (en) 1996-05-13 2002-04-02 Applied Materials, Inc. Plasma reactor having a dual mode RF power application
JPH10189553A (en) * 1996-10-30 1998-07-21 Agency Of Ind Science & Technol Dryetching method
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6174451B1 (en) 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
WO2000030168A1 (en) * 1998-11-16 2000-05-25 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US6800213B2 (en) 2000-02-17 2004-10-05 Ji Ding Precision dielectric etch using hexafluorobutadiene
WO2001068939A3 (en) * 2000-03-10 2002-05-30 Applied Materials Inc Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6613689B2 (en) 2000-03-10 2003-09-02 Applied Materials, Inc Magnetically enhanced plasma oxide etch using hexafluorobutadiene
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma

Also Published As

Publication number Publication date
JPH0160938B2 (en) 1989-12-26

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