JPH0160938B2 - - Google Patents
Info
- Publication number
- JPH0160938B2 JPH0160938B2 JP4129181A JP4129181A JPH0160938B2 JP H0160938 B2 JPH0160938 B2 JP H0160938B2 JP 4129181 A JP4129181 A JP 4129181A JP 4129181 A JP4129181 A JP 4129181A JP H0160938 B2 JPH0160938 B2 JP H0160938B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- hexafluorobenzene
- oxide film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 39
- ZQBFAOFFOQMSGJ-UHFFFAOYSA-N hexafluorobenzene Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1F ZQBFAOFFOQMSGJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明は、単結晶又は多結晶シリコン上に形成
されたシリコン酸化膜をドライエツチングする方
法に関するもので、特にシリコン基板上のシリコ
ン酸化膜をガスプラズマでエツチングするための
エツチングガスの選択に関するものである。
近年半導体装置の微細化が進むにつれて、半導
体装置の製造中におけるエツチング工程は、従来
の化学溶液を利用したウエツトエツチングからプ
ラズマ状態のガスやイオンビームを利用したドラ
イエツチングに変りつつある。後者のドライエツ
チング方法によれば廃液処理などの公害問題を招
く惧れが少なく、また微細パターンの加工が可能
になり、加えて均一なエツチング処理を施こすこ
とができるという利点があり、特に超LSIの製造
には不可欠の技術となつている。
シリコン基板に形成されたシリコン酸化膜や窒
素化膜をドライエツチングするために、従来から
開発されているドライエツチング方法のためのエ
ツチングガスとして次のような２種類のガスが用
いられている。
() 例えばCF4、C2F6のようなフロンガスに水
素を混合させたガス。
() C2F6、C3F8等の単体ガス。
前者の（）に示した混合ガスを利用する方法
は、水素を含むガスの組成を変えることによつて
エツチングの際の選択比（SiO2エツチング速
度／Siエツチング速度）を比較的広い範囲に亘つ
て変えることができるという利点がある反面、混
合ガス中で水素が反応してHFを発生し、そのた
めに製造装置を腐蝕させて耐久性を著しく低下さ
せるという欠点があり、また水素ガスを扱うため
に危険性が高く慎重な取り扱い管理及びが要求さ
れるという欠点があつた。また後者の（）によ
る単体ガスを利用する方法は、水素が含まれない
ため上記前者のような危険性はないが、一般に選
択比が低くまたエツチングガスが一定であるため
選択比を自由に変えることができない、という欠
点があつた。
この発明は上記従来の（）及び（）のエツ
チングガスを利用したドライエツチングにおける
欠点を除去し、安全に操作することができ且つ選
択比を自由に選ぶことができ、特に高い選択比を
比較的容易に得ることができる反応性イオンエツ
チング方法を提供するものである。この発明は気
相のヘキサフロロベンゼンにCF4を混合させたも
のをプラズマエツチング用のガスとするものであ
る。次に実施例を挙げて本発明を詳細に説明す
る。
第１図は反応性イオンエツチングのための反応
装置を模型的に示す図で、真空チヤンバー１の内
部には平行平板型の電極２1，２2が間隙を隔てて
相対向する関係に配置され、両電極２1，２2の間
には高周波電源回路３が接続されて、例えば
13.56MHzの高周波を発生させる。エツチングさ
れるべき半導体基板４は上記電極２1，２2間に配
置される。チヤンバー１内には次に述べるエツチ
ングのための混合ガスが導入され、電源が投入さ
れた状態で電極間に発生したプラズマを半導体基
板表面に投射する。
ここでまずこの種のSiO2の反応性イオンエツ
チングの機構の概要を説明する。一般に上記反応
装置のチヤンバー１内にCF4を流入してプラズマ
を発生させると、活性なフツ素F*の他にCF3 +や
CF2 ++等の炭素原子を伴つた反応性のイオンを発
生する。このようにチヤンバー内に発生したイオ
ンの内、活性なフツ素F*はシリコン基板をエツ
チングし、CF3 +はシリコン酸化膜を選択的にエ
ツチングすると考えられている。
従来からシリコンをエツチングする目的のため
には活性なフツ素F*を多く発生させるために、
（CF4＋O2）等の混合ガスを用い、次のような反
応によつてF*を発生させる
CF4＋O2→CO2＋4F*
一方シリコン酸化膜をエツチングするために
は、CF3 +を発生させ易くするために（CF4＋H2）
の混合ガスやC3F8が用いられ、次の反応式のよ
うにF*の発生を抑えてCF3 +を発生させる。
CF4＋Ｈ→CF3 +＋HF
C3F8→2CF3 +＋CF2 ++
処で上記のようなプラズマによつて発生した
CF3 +、CF2 ++はシリコン酸化膜をエツチングする
が、過剰に発生すると重合反応が起こり、テフロ
ン系のポリマーが形成される。生成されたポリマ
ーのためにエツチング反応が停止するばかりでな
く、チヤンバー内壁を汚染させて装置の保守点検
に非常に多くの手間を要するという欠点がある。
次に本発明に適用するヘキサフロロベンゼン
C6F6について説明する。このヘキサフロロベン
ゼンC6F6は
The present invention relates to a method for dry etching a silicon oxide film formed on single crystal or polycrystalline silicon, and in particular to selection of an etching gas for etching a silicon oxide film on a silicon substrate using gas plasma. be. As the miniaturization of semiconductor devices has progressed in recent years, the etching process during the manufacture of semiconductor devices has been changing from conventional wet etching using chemical solutions to dry etching using plasma gas or ion beams. The latter dry etching method has the advantage of being less likely to cause pollution problems such as waste liquid treatment, making it possible to process fine patterns, and being able to perform uniform etching. It has become an essential technology for LSI manufacturing. In order to dry-etch a silicon oxide film or a nitride film formed on a silicon substrate, the following two types of gases are used as etching gases for dry etching methods that have been developed in the past. () For example, a gas in which hydrogen is mixed with a fluorocarbon gas such as CF 4 or C 2 F 6 . () Simple gases such as C 2 F 6 and C 3 F 8 . The former method using a mixed gas shown in () changes the etching selectivity (SiO 2 etching rate/Si etching rate) over a relatively wide range by changing the composition of the hydrogen-containing gas. On the other hand, there is the disadvantage that hydrogen reacts in the mixed gas and generates HF, which corrodes the manufacturing equipment and significantly reduces its durability. However, it has the disadvantage that it is highly dangerous and requires careful handling and management. The latter method () using a simple gas does not contain hydrogen and is therefore not as dangerous as the former method, but the selectivity is generally low and the etching gas is constant, so the selectivity can be changed freely. The drawback was that I couldn't do it. This invention eliminates the drawbacks of the conventional dry etching using etching gases () and (), allows safe operation, and allows the selection ratio to be freely selected. The present invention provides a reactive ion etching method that can be easily obtained. In this invention, a mixture of gaseous hexafluorobenzene and CF 4 is used as a gas for plasma etching. Next, the present invention will be explained in detail with reference to Examples. FIG. 1 schematically shows a reaction apparatus for reactive ion etching. Inside a vacuum chamber 1, parallel plate electrodes 2 1 and 2 2 are arranged facing each other with a gap in between. , a high frequency power supply circuit 3 is connected between the electrodes 2 1 and 2 2 , for example.
Generates a high frequency of 13.56MHz. The semiconductor substrate 4 to be etched is placed between the electrodes 2 1 and 2 2 . A mixed gas for etching, which will be described below, is introduced into the chamber 1, and with the power turned on, plasma generated between the electrodes is projected onto the surface of the semiconductor substrate. First, an overview of the mechanism of this type of reactive ion etching of SiO 2 will be explained. Generally, when CF 4 is introduced into the chamber 1 of the above reactor to generate plasma, CF 3 + and
Generates reactive ions with carbon atoms such as CF 2 ++ . Among the ions generated in the chamber in this way, active fluorine F * is thought to etch the silicon substrate, and CF 3 + selectively etch the silicon oxide film. Conventionally, for the purpose of etching silicon, in order to generate a large amount of active fluorine F * ,
Using a mixed gas such as (CF 4 + O 2 ), F * is generated through the following reaction: CF 4 + O 2 → CO 2 + 4F * On the other hand, in order to etch a silicon oxide film, CF 3 + is To make it easier to generate (CF 4 + H 2 )
A mixed gas of C 3 F 8 and C 3 F 8 are used to suppress the generation of F * and generate CF 3 + as shown in the following reaction formula. CF 4 +H→CF 3 + +HF C 3 F 8 →2CF 3 + +CF 2 ++ generated by the above plasma.
CF 3 + and CF 2 ++ etch the silicon oxide film, but if they are generated in excess, a polymerization reaction occurs and a Teflon-based polymer is formed. The disadvantage is that the produced polymer not only stops the etching reaction, but also contaminates the inner walls of the chamber, making maintenance and inspection of the apparatus very time-consuming. Next, hexafluorobenzene applied to the present invention
Explain C 6 F 6 . This hexafluorobenzene C 6 F 6 is
【式】の構造をもち、沸点が
80℃以下の液体として入手される。このヘキサフ
ロロベンゼンは炭素原子の割合が多いことからシ
リコン酸化膜をエツチングするCF3 +、CF2 ++を比
較的容易に発生させ得る。しかしヘキサフロロベ
ンゼン単体のガスのみでプラズマを発生させた場
合にはCF3 +、CF2 ++の発生量著しく過剰になつて
上述のようにポリマーが形成されるための反応が
進行せず、実用化にはならなかつた。そこでヘキ
サフロロベンゼンから発生したCF3 +、CF2 ++のイ
オンを効果的に飛翔させて重合反応の発生を阻止
させるため、本発明はCF3 +、CF2 ++の発生量を制
御するエツチングガス組成を選択する。即ちこの
発明はヘキサフロロベンゼン（C6F6）にCF4を混
合したガスをチヤンバー内に流入させる。ヘキサ
フロロベンゼンとCF4との混合比は選択比等のエ
ツチング条件に応じて任意の値に選ぶことができ
る。第２図はCF4をヘキサフロロベンゼンに混合
させたガスを流入した場合のガス混合割合（横
軸）（C6F6／CF4＋C6F6）とエツチング速度（縦
軸）との関係を示し、図中曲線Ａはシリコン酸化
膜の、曲線Ｂは多結晶シリコンにおけるエツチン
グガス混合比とエツチング速度の関係を示してい
る。第３図の曲線Ｃは第２図の関係から更に選択
比（SiO2／多結晶Si）の関係を求めて図示した
ものである。尚同図において上記プラズマエツチ
ングにおけるエツチングガスは、ヘキサフロロベ
ンゼンとCF4の合計容積が8.4c.c.／minの流速で供
給され、この8.4c.c.／minの中で夫々のガスが占
める割合を変化させたものである。またチヤンバ
ー１内の圧力は23ｍTorrに調整され、200Wの高
周波出力が印加されている。チヤンバー１内は上
記ヘキサフロロベンゼンとCF4の混合ガスだけで
はなく、更にアルゴン、ヘリウム等の不活性ガス
が６c.c.／minの割合でエツチングガスを希釈する
ために同時に流入されている。上記不活性ガスは
特に必要とするものではないが前述のようにエツ
チングガスを希釈することにより、高周波出力の
整合性が良好になることが確かめられた。
第２図、第３図から明らかなようにヘキサフロ
ロベンゼンとCF4の混合によるプラズマエツチン
グでは、シリコン酸化膜のエツチング速度がシリ
コンのエツチング速度に比べて著しく大きく、従
つてその選択比も大きくとれる。選択比はガスの
組成を変えることによつて３〜15程度の値にまで
広い範囲に亘つて調整することができる。
シリコン酸化膜のエツチングとしてはヘキサフ
ロロベンゼンとCF4をほぼ１：１の混合割合の近
傍が好ましい。
なお、本エツチング条件では、多結晶シリコン
と単結晶シリコンのエツチング速度は、ほぼ同一
であり、第４図に示す様に、SiO2と単結晶シリ
コンの間でも選択エツチングが可能となる。
第２図及び第３図中、破線で示した曲線A′，
B′及びC′はチヤンバー内に流入されるガス圧をよ
り高い70ｍTorrに設定し、ガスの流入速度を
74.4c.c.／min（CF4＋C6F6が14.7c.c.／min、Arが60
c.c.／min）とした場合のエツチング速度及び選択
比を示す。チヤンバー内のガス圧を高くすること
により、ポリマーを生成してドライエツチングが
不可能になる点がより低い混合比の側に寄つてく
る。
またチヤンバー内に流入される上記エツチング
ガスは、予めアルゴンやヘリウム等の不活性ガス
によつて希釈してチヤンバー内に供給することが
でき、前記実施例では60c.c.／min程度の不活性ガ
スによつてエツチングガスが希釈されている。希
釈したエツチングガスを用いてプラズマを発生さ
せることにより、高周波発生回路における整合が
著しく良好になることが確められた。
以上本発明によれば、ヘキサフロロベンゼンに
CF4を混合したガスをプラズマエツチングのため
のガスとすることにより、化学的に安定で、安
全・無公害な薬品を用いることができ、またドラ
イエツチング時に高い選択比を容易に得ることが
でき、更にガスの混合比を変えることによつて選
択比を広い範囲に亘つて変化させることができ、
所望のエツチング工程に適切なエツチングを施こ
まことができる。特にシリコン半導体基板上に形
成された層間絶縁膜としてのシリコン酸化膜を非
常に微細にエツチングすることができ、極めて微
細なコンタクトホール等をも確実に作成すること
ができる。It has the structure of [Formula] and is available as a liquid with a boiling point of 80°C or less. Since this hexafluorobenzene has a high proportion of carbon atoms, it can relatively easily generate CF 3 + and CF 2 ++ that etch the silicon oxide film. However, when plasma is generated using only hexafluorobenzene gas, the amount of CF 3 + and CF 2 ++ generated becomes extremely excessive, and the reaction to form the polymer as described above does not proceed. It was not put into practical use. Therefore, in order to effectively fly the CF 3 + and CF 2 ++ ions generated from hexafluorobenzene and prevent the polymerization reaction from occurring, the present invention controls the amount of CF 3 + and CF 2 ++ generated. Select etching gas composition. That is, in this invention, a gas containing CF 4 mixed with hexafluorobenzene (C 6 F 6 ) flows into the chamber. The mixing ratio of hexafluorobenzene and CF 4 can be selected to any value depending on etching conditions such as selectivity. Figure 2 shows the relationship between the gas mixture ratio (horizontal axis) (C 6 F 6 /CF 4 +C 6 F 6 ) and etching rate (vertical axis) when a gas containing CF 4 mixed with hexafluorobenzene is introduced. In the figure, curve A shows the relationship between etching gas mixture ratio and etching rate for silicon oxide film, and curve B shows the relationship between etching gas mixture ratio and etching rate for polycrystalline silicon. Curve C in FIG. 3 is a diagram obtained by further determining the relationship of selectivity (SiO 2 /polycrystalline Si) from the relationship in FIG. 2. In the same figure, the etching gas in the plasma etching described above was supplied at a flow rate of 8.4 cc/min with a total volume of hexafluorobenzene and CF 4 , and the proportion occupied by each gas within this 8.4 cc/min was varied. It is something. The pressure inside chamber 1 was adjusted to 23mTorr, and a high frequency output of 200W was applied. In addition to the above-mentioned mixed gas of hexafluorobenzene and CF 4 , an inert gas such as argon or helium is simultaneously flowed into the chamber 1 at a rate of 6 c.c./min to dilute the etching gas. Although the inert gas is not particularly required, it has been confirmed that diluting the etching gas as described above improves the consistency of the high frequency output. As is clear from FIGS. 2 and 3, in plasma etching using a mixture of hexafluorobenzene and CF 4 , the etching rate of silicon oxide film is significantly higher than that of silicon, and therefore the etching selectivity is also large. . The selectivity ratio can be adjusted over a wide range of values from about 3 to about 15 by changing the gas composition. For etching a silicon oxide film, it is preferable to mix hexafluorobenzene and CF 4 at a mixing ratio of approximately 1:1. Note that under these etching conditions, the etching speeds of polycrystalline silicon and single-crystal silicon are almost the same, and as shown in FIG. 4, selective etching is also possible between SiO 2 and single-crystal silicon. In Figures 2 and 3, the curves A', indicated by broken lines,
B' and C' set the gas pressure flowing into the chamber to a higher value of 70 mTorr, and the gas inflow velocity
74.4cc/min (CF 4 + C 6 F 6 is 14.7cc/min, Ar is 60
The etching rate and selectivity are shown in the figure (cc/min). By increasing the gas pressure in the chamber, the point at which polymer is formed and dry etching becomes impossible is shifted toward lower mixing ratios. Further, the etching gas introduced into the chamber can be diluted with an inert gas such as argon or helium beforehand and supplied into the chamber. The etching gas is diluted by the gas. It has been confirmed that generating plasma using diluted etching gas significantly improves the matching in the high frequency generation circuit. According to the present invention, hexafluorobenzene
By using a gas mixed with CF 4 as the gas for plasma etching, chemically stable, safe and non-polluting chemicals can be used, and a high selectivity can be easily obtained during dry etching. Furthermore, by changing the gas mixture ratio, the selectivity can be varied over a wide range,
Appropriate etching can be performed in a desired etching process. In particular, a silicon oxide film as an interlayer insulating film formed on a silicon semiconductor substrate can be etched very finely, and even very fine contact holes etc. can be reliably created.
第１図は反応性イオンエツチング装置を示す概
略構成図、第２図及び第３図、第４図は本発明に
よる反応性イオンエツチング方法を説明するため
のガス混合割合とエツチング速度及び選択比の関
係を示す図である。
Ａ，A′：シリコン酸化膜のエツチング速度、
Ｂ，B′：ポリシリコンのエツチング速度、Ｃ，
C′：選択比。
FIG. 1 is a schematic configuration diagram showing a reactive ion etching apparatus, and FIGS. 2, 3, and 4 show gas mixing ratios, etching rates, and selection ratios for explaining the reactive ion etching method according to the present invention. It is a figure showing a relationship. A, A': Etching rate of silicon oxide film,
B, B': Etching rate of polysilicon, C,
C′: Selectivity ratio.
Claims (1)
リコン酸化膜をドライエツチングする方法におい
て、気相のヘキサフロロベンゼン（C6F6）とCF4
を所望の割合で混合してガスプラズマを形成し、
シリコン酸化膜をシリコンに対して選択的にエツ
チングすることを特徴とする反応性イオンエツチ
ング方法。 ２ 前記混合ガスは更にヘリウム又はアルゴンの
不活性ガスで稀釈されてなることを特徴とする特
許請求の範囲第１項記載の反応性イオンエツチン
グ方法。 ３ 前記ヘキサフロロベンゼンとCF4との混合比
はモル比でほぼ１：１に混合されてなることを特
徴とする特許請求の範囲第１項記載の反応性イオ
ンエツチング方法。[Claims] 1. A method for dry etching a silicon oxide film formed on single crystal or polycrystalline silicon, in which gaseous hexafluorobenzene (C 6 F 6 ) and CF 4
are mixed in a desired proportion to form a gas plasma,
A reactive ion etching method characterized by selectively etching a silicon oxide film with respect to silicon. 2. The reactive ion etching method according to claim 1, wherein the mixed gas is further diluted with an inert gas such as helium or argon. 3. The reactive ion etching method according to claim 1, wherein the hexafluorobenzene and CF 4 are mixed at a molar ratio of approximately 1:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4129181A JPS57155732A (en) | 1981-03-20 | 1981-03-20 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4129181A JPS57155732A (en) | 1981-03-20 | 1981-03-20 | Dry etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155732A JPS57155732A (en) | 1982-09-25 |
| JPH0160938B2 true JPH0160938B2 (en) | 1989-12-26 |
Family
ID=12604338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4129181A Granted JPS57155732A (en) | 1981-03-20 | 1981-03-20 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155732A (en) |
Cited By (1)
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| US5477975A (en) * | 1993-10-15 | 1995-12-26 | Applied Materials Inc | Plasma etch apparatus with heated scavenging surfaces |
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| US6077384A (en) * | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| KR100281345B1 (en) * | 1992-12-01 | 2001-03-02 | 조셉 제이. 스위니 | Oxide Etching Process in Electromagnetically Coupled Planner Plasma Device |
| TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
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| JP4215294B2 (en) * | 1996-10-30 | 2009-01-28 | 独立行政法人産業技術総合研究所 | Dry etching method |
| US6183655B1 (en) | 1997-09-19 | 2001-02-06 | Applied Materials, Inc. | Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6174451B1 (en) | 1998-03-27 | 2001-01-16 | Applied Materials, Inc. | Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons |
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1981
- 1981-03-20 JP JP4129181A patent/JPS57155732A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018016375A1 (en) | 2016-07-20 | 2018-01-25 | 昭和電工株式会社 | Gas supply apparatus and gas supply method |
| US11427907B2 (en) | 2016-07-20 | 2022-08-30 | Showa Denko K.K. | Gas supply apparatus and gas supply method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57155732A (en) | 1982-09-25 |
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