JPS6436023A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS6436023A JPS6436023A JP19163687A JP19163687A JPS6436023A JP S6436023 A JPS6436023 A JP S6436023A JP 19163687 A JP19163687 A JP 19163687A JP 19163687 A JP19163687 A JP 19163687A JP S6436023 A JPS6436023 A JP S6436023A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon compound
- refractory metal
- metal silicon
- etching operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To execute an etching operation without leaving a remaining substance and under a condition of a high selection ratio with reference to a substratum layer by a method wherein the etching operation by using a chlorine gas and the etching operation by using a fluorine gas are combined. CONSTITUTION:When a dry etching operation is executed to a laminated conductive film 5 composed of a refractory metal silicon compound layer 3 formed on a substrate 1 and an aluminum layer 4 formed on this refractory metal silicon compound layer 3, a whole part of the aluminum layer 4 and one part of the refractory metal silicon compound layer 3 are etched selectively by using a chlorine (Cl) gas; a remaining part of the refractory metal silicon compound layer 3 is etched by using a fluorine (F) gas. A refractory metal silicon compound refers to, e.g., MoSi2, WSi12, TaSi2 or the like. As the chlorine gas, e,g., a gas mainly composed of BCl3 is used; as the fluorine-based gas, e.g., a gas composed of SF6 is used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62191636A JP2629721B2 (en) | 1987-07-31 | 1987-07-31 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62191636A JP2629721B2 (en) | 1987-07-31 | 1987-07-31 | Dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6436023A true JPS6436023A (en) | 1989-02-07 |
JP2629721B2 JP2629721B2 (en) | 1997-07-16 |
Family
ID=16277952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62191636A Expired - Fee Related JP2629721B2 (en) | 1987-07-31 | 1987-07-31 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2629721B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254589A (en) * | 1995-01-30 | 1995-10-03 | Hitachi Ltd | Post-processing of sample |
JPH088236A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
WO2005001161A1 (en) * | 2003-06-30 | 2005-01-06 | Tdk Corporation | Mask material for reactive ion etching, mask and dry etching method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583251A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS5917526A (en) * | 1982-07-22 | 1984-01-28 | Sumitomo Electric Ind Ltd | Photoscanner |
JPS59175726A (en) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62154759A (en) * | 1985-12-27 | 1987-07-09 | Nippon Denso Co Ltd | Semiconductor device and manufacture thereof |
-
1987
- 1987-07-31 JP JP62191636A patent/JP2629721B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583251A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS5917526A (en) * | 1982-07-22 | 1984-01-28 | Sumitomo Electric Ind Ltd | Photoscanner |
JPS59175726A (en) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62154759A (en) * | 1985-12-27 | 1987-07-09 | Nippon Denso Co Ltd | Semiconductor device and manufacture thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254589A (en) * | 1995-01-30 | 1995-10-03 | Hitachi Ltd | Post-processing of sample |
JPH088236A (en) * | 1995-01-30 | 1996-01-12 | Hitachi Ltd | Sample treatment method |
WO2005001161A1 (en) * | 2003-06-30 | 2005-01-06 | Tdk Corporation | Mask material for reactive ion etching, mask and dry etching method |
Also Published As
Publication number | Publication date |
---|---|
JP2629721B2 (en) | 1997-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |