JPS5640257A - Field structure of semiconductor device - Google Patents

Field structure of semiconductor device

Info

Publication number
JPS5640257A
JPS5640257A JP11556979A JP11556979A JPS5640257A JP S5640257 A JPS5640257 A JP S5640257A JP 11556979 A JP11556979 A JP 11556979A JP 11556979 A JP11556979 A JP 11556979A JP S5640257 A JPS5640257 A JP S5640257A
Authority
JP
Japan
Prior art keywords
wiring
film
si3n4
end section
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11556979A
Other languages
Japanese (ja)
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11556979A priority Critical patent/JPS5640257A/en
Publication of JPS5640257A publication Critical patent/JPS5640257A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To perform minute wiring by consisting a field insulating film as two- layer structure of SiO2 and Si3N4 when the field insulating film is connected by protruding the film from a wiring end section wherein the formation of flaws and the breaking of a wire are prevented. CONSTITUTION:An Si3N4 film 9 is formed on a field SiO2 film 11 and an electrode wiring end section 2, a layer insulating film 3 and a resist mask 4 are formed. Photo etching by the etchants of HF group will cause little etching for Si3N4. Therefore, flaw parts will not exist at the wiring end section. So, the breaking of a wire will be prevented even if the wiring 7 is applied. And the formation of minute wiring becomes easy to permit the improvement of the integration of a device. Furthermore, the same effect will also be obtained when plasma photo etching is applied by using freon gas and by selecting conditiions.
JP11556979A 1979-09-07 1979-09-07 Field structure of semiconductor device Pending JPS5640257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11556979A JPS5640257A (en) 1979-09-07 1979-09-07 Field structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11556979A JPS5640257A (en) 1979-09-07 1979-09-07 Field structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5640257A true JPS5640257A (en) 1981-04-16

Family

ID=14665798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11556979A Pending JPS5640257A (en) 1979-09-07 1979-09-07 Field structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5640257A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217635A (en) * 1986-03-19 1987-09-25 Toshiba Corp Semiconductor device
JPH0221640A (en) * 1987-06-12 1990-01-24 Yokogawa Hewlett Packard Ltd Semiconductor device
JPH066941B2 (en) * 1984-06-04 1994-01-26 ソロモン，フレッド・ディ− Solar power pump assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH066941B2 (en) * 1984-06-04 1994-01-26 ソロモン，フレッド・ディ− Solar power pump assembly
JPS62217635A (en) * 1986-03-19 1987-09-25 Toshiba Corp Semiconductor device
JPH0221640A (en) * 1987-06-12 1990-01-24 Yokogawa Hewlett Packard Ltd Semiconductor device

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