JPS5646582A - Formation of pattern of filmlike article - Google Patents

Formation of pattern of filmlike article

Info

Publication number
JPS5646582A
JPS5646582A JP12237579A JP12237579A JPS5646582A JP S5646582 A JPS5646582 A JP S5646582A JP 12237579 A JP12237579 A JP 12237579A JP 12237579 A JP12237579 A JP 12237579A JP S5646582 A JPS5646582 A JP S5646582A
Authority
JP
Japan
Prior art keywords
film
hole
niobium
pattern
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12237579A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12237579A priority Critical patent/JPS5646582A/en
Publication of JPS5646582A publication Critical patent/JPS5646582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Abstract

PURPOSE:To readily obtain a niobium film pattern by employing double film mask of Al and Cr and forming a niobium film only in a hole formed at the mask when forming a niobium film pattern for a Josephson element on a substrate. CONSTITUTION:An Al film 4, a Cr film 5 and a resist film 5 are laminated on a substrate 1 of silicon semiconductor becoming insulator at the operating temperature of the element or insulator such as glass, sapphire or the like. Subsequently, a hole 21 is opened at the film 2, the film 5 of the exposed portion is etched, and a hole 51 having the same size as the hole 21 is formed at the film 5. Thereafter, the exposed film 4 is overetched, and a desired wide hole 41 is opened thereat, the film 2 is removed, niobium film 3 is evaporated on the whole surface, and independent niobium film 31 is formed in the hole 41. Then, the films 4, 5 are removed together with the covered film 3 thereon, and only the film 31 is retained. Thus, the film required for high temperature covering is accurately obtained by a lift-off process.
JP12237579A 1979-09-21 1979-09-21 Formation of pattern of filmlike article Pending JPS5646582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12237579A JPS5646582A (en) 1979-09-21 1979-09-21 Formation of pattern of filmlike article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12237579A JPS5646582A (en) 1979-09-21 1979-09-21 Formation of pattern of filmlike article

Publications (1)

Publication Number Publication Date
JPS5646582A true JPS5646582A (en) 1981-04-27

Family

ID=14834278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12237579A Pending JPS5646582A (en) 1979-09-21 1979-09-21 Formation of pattern of filmlike article

Country Status (1)

Country Link
JP (1) JPS5646582A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205974A (en) * 1987-02-23 1988-08-25 Agency Of Ind Science & Technol Manufacture of josephson junction
JPH01102976A (en) * 1987-10-15 1989-04-20 Nec Corp Method for forming high temperature oxide superconductor thin film pattern
CN111403590A (en) * 2020-04-30 2020-07-10 合肥本源量子计算科技有限责任公司 Preparation method of superconducting Josephson junction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205974A (en) * 1987-02-23 1988-08-25 Agency Of Ind Science & Technol Manufacture of josephson junction
JPH0523510B2 (en) * 1987-02-23 1993-04-02 Kogyo Gijutsuin
JPH01102976A (en) * 1987-10-15 1989-04-20 Nec Corp Method for forming high temperature oxide superconductor thin film pattern
CN111403590A (en) * 2020-04-30 2020-07-10 合肥本源量子计算科技有限责任公司 Preparation method of superconducting Josephson junction

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