JPS5498179A - Preparation of minute circuits and elements - Google Patents

Preparation of minute circuits and elements

Info

Publication number
JPS5498179A
JPS5498179A JP433578A JP433578A JPS5498179A JP S5498179 A JPS5498179 A JP S5498179A JP 433578 A JP433578 A JP 433578A JP 433578 A JP433578 A JP 433578A JP S5498179 A JPS5498179 A JP S5498179A
Authority
JP
Japan
Prior art keywords
film
mask
layer
minute
register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP433578A
Other languages
Japanese (ja)
Inventor
Azusa Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP433578A priority Critical patent/JPS5498179A/en
Publication of JPS5498179A publication Critical patent/JPS5498179A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To provide a minute thin metallic film of high melting point by arranging a mask made by laminating two films; metallic film and register film.
CONSTITUTION: Al film 4 of the specified thickness is formed on substrate 1 and photoregister 5 is laminated on it for the exposed light development. Then, make a mask layer by etching Al 4 and steam affix 6 a high melting point metal such as W, Ti, etc. and a metallic compound such as NbN, etc. on the mask layer. At this time, register 5 is slightly deformed, but the mask pattern is not changed because of the lower layer 4 of Al. A minute pattern is formed when layer 4 is etched after film 5 is lifted off.
COPYRIGHT: (C)1979,JPO&Japio
JP433578A 1978-01-20 1978-01-20 Preparation of minute circuits and elements Pending JPS5498179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP433578A JPS5498179A (en) 1978-01-20 1978-01-20 Preparation of minute circuits and elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP433578A JPS5498179A (en) 1978-01-20 1978-01-20 Preparation of minute circuits and elements

Publications (1)

Publication Number Publication Date
JPS5498179A true JPS5498179A (en) 1979-08-02

Family

ID=11581566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP433578A Pending JPS5498179A (en) 1978-01-20 1978-01-20 Preparation of minute circuits and elements

Country Status (1)

Country Link
JP (1) JPS5498179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445039A (en) * 1987-08-13 1989-02-17 Sony Corp Manufacture of electron tube cathode device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045571A (en) * 1973-08-25 1975-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045571A (en) * 1973-08-25 1975-04-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445039A (en) * 1987-08-13 1989-02-17 Sony Corp Manufacture of electron tube cathode device

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