JPS55107781A - Etching method for metal film - Google Patents

Etching method for metal film

Info

Publication number
JPS55107781A
JPS55107781A JP1560179A JP1560179A JPS55107781A JP S55107781 A JPS55107781 A JP S55107781A JP 1560179 A JP1560179 A JP 1560179A JP 1560179 A JP1560179 A JP 1560179A JP S55107781 A JPS55107781 A JP S55107781A
Authority
JP
Japan
Prior art keywords
substrate
etching
electrode
layer
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1560179A
Other languages
Japanese (ja)
Other versions
JPS6122031B2 (en
Inventor
Shuji Tabuchi
Akira Abiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1560179A priority Critical patent/JPS55107781A/en
Publication of JPS55107781A publication Critical patent/JPS55107781A/en
Publication of JPS6122031B2 publication Critical patent/JPS6122031B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent excess etching in forming an electrode or a wiring pattern, by attaching an etching mask through an insulated layer to the metal film metallized on a substrate, then by sputtering-etching the metal film.
CONSTITUTION: In forming, for example, an electrode or a wiring pattern of a semiconductor element for IC etc., an electrode contact window 3 is formed in the SiO2-layer which covers the surface of a substrate 1 by ordinary photoetching method. Then Al coating 4 is formed by metallizing etc. over whole surface of the substrate 1, and Al2O3-layer 5 is formed on the surface of the coating 4 by anodizing process etc. On the layer 5 is formed an etching mask 6 composed of photoresist, then the Si substrate 1 is arranged in a sputtering apparatus so as to conduct high frequency sputtering-etching in a reactive gas such as CCl4 or BCl3 at a press. about 0.1 Torr. Hereby, an electrode or a wiring pattern made of Al is formed on the substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
JP1560179A 1979-02-13 1979-02-13 Etching method for metal film Granted JPS55107781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1560179A JPS55107781A (en) 1979-02-13 1979-02-13 Etching method for metal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1560179A JPS55107781A (en) 1979-02-13 1979-02-13 Etching method for metal film

Publications (2)

Publication Number Publication Date
JPS55107781A true JPS55107781A (en) 1980-08-19
JPS6122031B2 JPS6122031B2 (en) 1986-05-29

Family

ID=11893233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1560179A Granted JPS55107781A (en) 1979-02-13 1979-02-13 Etching method for metal film

Country Status (1)

Country Link
JP (1) JPS55107781A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998021745A1 (en) * 1996-11-14 1998-05-22 Tokyo Electron Limited Process for the production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998021745A1 (en) * 1996-11-14 1998-05-22 Tokyo Electron Limited Process for the production of semiconductor device
US6727182B2 (en) 1996-11-14 2004-04-27 Tokyo Electron Limited Process for the production of semiconductor device

Also Published As

Publication number Publication date
JPS6122031B2 (en) 1986-05-29

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