JPS56148845A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To readily form a microminiature multlayer wiring pattern on a semiconductor substrate on which a metallic wire is formed by forming an insulating film on the substrate, covering an organic film having high fluidity on the entire surface and etching the film to flatten the surface of the substrate. CONSTITUTION:A conductive film pattern 5 made of aluminum alloy or the like is covered in a thickness of approx. 1mum on a silicon oxide film 4 on the surface of a semiconductor subtrate 1. A silicon nitride film 6 is grown in a vapor phase thereon in a thickness of apporx. 1mum. An organic film having high fludity such as, for example, a positive type resist 7 is coated in a thickness of approx. 1-1.5mum on the entire surface, and removed on the pattern 5 by a phototeching. When the surface is further plasma etched, the thin part of the positive resist 7 is removed. With the residual positive resist 7 as a mask the film 6 is ion etched to expose the pattern 5, and thus the flat surface can be obtained. Other conductive pattern 10 is formed through an insulating film 8 by an ordinary method thereon, and a multilayer wiring can be thus obtained.