JPS5495185A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5495185A JPS5495185A JP199878A JP199878A JPS5495185A JP S5495185 A JPS5495185 A JP S5495185A JP 199878 A JP199878 A JP 199878A JP 199878 A JP199878 A JP 199878A JP S5495185 A JPS5495185 A JP S5495185A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- flat
- wiring
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To facilitate the formation of a multi-layer wiring to improve reliability by utilizing the directivity, which is a feature of the laser evaporation method, to make the step difference of the semiconductor substrate flat.
CONSTITUTION: Al film 303 is evaporated on semiconductor substrate 301 where an active region is formed, and mask 304 of a positive-type photo-resistor is formed. Next, film 303 is etched by the reaction-property sputter etching using BCl3 as reaction gas, and film 303 is made into the form of Al wiring 303'. After that, SiO2 film 305 is caused to adhere to all the surface of substrate 301 by the laser evaporation method while leaving mask 304 as it is, and needless mask 304 and SiO2 film 305' which is caused to adhere onto mask 304 are removed to obtain a structure where all the surface is flat. Next, Si3N4 film 306 is grown throughout the surface by the plasma CVD method. Thus, flat substrate 301 where Al wiring 303' is buried is obtained, and is laminated as required.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP199878A JPS5495185A (en) | 1978-01-13 | 1978-01-13 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP199878A JPS5495185A (en) | 1978-01-13 | 1978-01-13 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5495185A true JPS5495185A (en) | 1979-07-27 |
Family
ID=11517105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP199878A Pending JPS5495185A (en) | 1978-01-13 | 1978-01-13 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5495185A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176745A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of multilayer wiring |
JPS57184232A (en) * | 1981-05-08 | 1982-11-12 | Nec Corp | Manufacture of semiconductor device |
JPS5858744A (en) * | 1981-10-05 | 1983-04-07 | Nec Corp | Manufacture of semiconductor device |
JPS58201364A (en) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS61283144A (en) * | 1985-06-10 | 1986-12-13 | Agency Of Ind Science & Technol | Formation of multilayer interconnection |
-
1978
- 1978-01-13 JP JP199878A patent/JPS5495185A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176745A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of multilayer wiring |
JPS639660B2 (en) * | 1981-04-21 | 1988-03-01 | Nippon Telegraph & Telephone | |
JPS57184232A (en) * | 1981-05-08 | 1982-11-12 | Nec Corp | Manufacture of semiconductor device |
JPS5858744A (en) * | 1981-10-05 | 1983-04-07 | Nec Corp | Manufacture of semiconductor device |
JPS58201364A (en) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS61283144A (en) * | 1985-06-10 | 1986-12-13 | Agency Of Ind Science & Technol | Formation of multilayer interconnection |
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