JPS5495185A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5495185A
JPS5495185A JP199878A JP199878A JPS5495185A JP S5495185 A JPS5495185 A JP S5495185A JP 199878 A JP199878 A JP 199878A JP 199878 A JP199878 A JP 199878A JP S5495185 A JPS5495185 A JP S5495185A
Authority
JP
Japan
Prior art keywords
film
mask
flat
wiring
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP199878A
Other languages
Japanese (ja)
Inventor
Takashi Nishida
Kazuyoshi Ueki
Tatsumi Mizutani
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP199878A priority Critical patent/JPS5495185A/en
Publication of JPS5495185A publication Critical patent/JPS5495185A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate the formation of a multi-layer wiring to improve reliability by utilizing the directivity, which is a feature of the laser evaporation method, to make the step difference of the semiconductor substrate flat.
CONSTITUTION: Al film 303 is evaporated on semiconductor substrate 301 where an active region is formed, and mask 304 of a positive-type photo-resistor is formed. Next, film 303 is etched by the reaction-property sputter etching using BCl3 as reaction gas, and film 303 is made into the form of Al wiring 303'. After that, SiO2 film 305 is caused to adhere to all the surface of substrate 301 by the laser evaporation method while leaving mask 304 as it is, and needless mask 304 and SiO2 film 305' which is caused to adhere onto mask 304 are removed to obtain a structure where all the surface is flat. Next, Si3N4 film 306 is grown throughout the surface by the plasma CVD method. Thus, flat substrate 301 where Al wiring 303' is buried is obtained, and is laminated as required.
COPYRIGHT: (C)1979,JPO&Japio
JP199878A 1978-01-13 1978-01-13 Production of semiconductor device Pending JPS5495185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP199878A JPS5495185A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP199878A JPS5495185A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5495185A true JPS5495185A (en) 1979-07-27

Family

ID=11517105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP199878A Pending JPS5495185A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5495185A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176745A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of multilayer wiring
JPS57184232A (en) * 1981-05-08 1982-11-12 Nec Corp Manufacture of semiconductor device
JPS5858744A (en) * 1981-10-05 1983-04-07 Nec Corp Manufacture of semiconductor device
JPS58201364A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61283144A (en) * 1985-06-10 1986-12-13 Agency Of Ind Science & Technol Formation of multilayer interconnection

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176745A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of multilayer wiring
JPS639660B2 (en) * 1981-04-21 1988-03-01 Nippon Telegraph & Telephone
JPS57184232A (en) * 1981-05-08 1982-11-12 Nec Corp Manufacture of semiconductor device
JPS5858744A (en) * 1981-10-05 1983-04-07 Nec Corp Manufacture of semiconductor device
JPS58201364A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61283144A (en) * 1985-06-10 1986-12-13 Agency Of Ind Science & Technol Formation of multilayer interconnection

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