JPS5536926A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5536926A
JPS5536926A JP10844478A JP10844478A JPS5536926A JP S5536926 A JPS5536926 A JP S5536926A JP 10844478 A JP10844478 A JP 10844478A JP 10844478 A JP10844478 A JP 10844478A JP S5536926 A JPS5536926 A JP S5536926A
Authority
JP
Japan
Prior art keywords
film
etching
window
silicon dioxide
metamorphic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10844478A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Ichiro Fujita
Toshio Kurahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10844478A priority Critical patent/JPS5536926A/en
Publication of JPS5536926A publication Critical patent/JPS5536926A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate formating of fine pattern inter-wiring contact hole and also to prevent inter-wiring capacity from increasing by forming a metamorphic film from applying high-frequency spatter etching to silicon dioxide film formed on a semiconductor substrate.
CONSTITUTION: An electrode wiring 3 of the first layer is formed on an insulating film 2 on a semiconductor substrate 1 in which various areas are formed, and then a silicon dioxide film 4 is grown to a given thickness according to chemical vapor phase growth process. Next, a metamorphic film is formed by etching the film 4 to a given thickness according to high-frequency spatter etching process for which argon ion is used, and then a contact window 4a is formed by means of etching liquid of fluoric acid group. Further a silicon dioxide film 5 is grown to a given thickness according to chemical vapor phase growth process, a photoresist film 6 having an etching window 6a is formed on the said film 5, and the window 4a is exposed again by etching the film 5 with the film 6 working as a mask. In this case, the window 4a can easily be formed by the metamorphic film without etching the film 4.
COPYRIGHT: (C)1980,JPO&Japio
JP10844478A 1978-09-04 1978-09-04 Manufacturing of semiconductor device Pending JPS5536926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10844478A JPS5536926A (en) 1978-09-04 1978-09-04 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10844478A JPS5536926A (en) 1978-09-04 1978-09-04 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5536926A true JPS5536926A (en) 1980-03-14

Family

ID=14484924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10844478A Pending JPS5536926A (en) 1978-09-04 1978-09-04 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5536926A (en)

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