JPS5591138A - Die forming of semiconductor device - Google Patents

Die forming of semiconductor device

Info

Publication number
JPS5591138A
JPS5591138A JP16487378A JP16487378A JPS5591138A JP S5591138 A JPS5591138 A JP S5591138A JP 16487378 A JP16487378 A JP 16487378A JP 16487378 A JP16487378 A JP 16487378A JP S5591138 A JPS5591138 A JP S5591138A
Authority
JP
Japan
Prior art keywords
film
scribe line
wafer
line
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16487378A
Other languages
Japanese (ja)
Inventor
Kenzo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16487378A priority Critical patent/JPS5591138A/en
Publication of JPS5591138A publication Critical patent/JPS5591138A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the integration level with a finer seribing by forming a groove on the surface of the semiconductor wafer by dry etching and completely dividing thereof by a jet scrubber when the wafer is divided into dice.
CONSTITUTION: An electrode wiring Al film 22 is applied on an Si wafer 21 having an element formed thereon and an SiO2 film 23 is grown on the film 22 in a gaseous phase to protect the film. Then, coated with a photoresist film 24, the film 24 undergoes a division matching exposure and a development to remove proper portion on the scribe line leaving the film 24 on the other areas. Thereafter, an engraving is made on the substrate 21 along the scribe line by a plasma etching to peel the film 24. Then, high pressure pure water ranging 100W400kg/cm2 is jetted one line at a time along the scribe line 25 to divide the substrate 21 generating a skewness on the bottom. With such an arrangement, a fine scribing line can be obtained without any spalling of Si during the division into while lack of requirement for organic chemicals facilitates the treatment.
COPYRIGHT: (C)1980,JPO&Japio
JP16487378A 1978-12-27 1978-12-27 Die forming of semiconductor device Pending JPS5591138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16487378A JPS5591138A (en) 1978-12-27 1978-12-27 Die forming of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16487378A JPS5591138A (en) 1978-12-27 1978-12-27 Die forming of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591138A true JPS5591138A (en) 1980-07-10

Family

ID=15801540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16487378A Pending JPS5591138A (en) 1978-12-27 1978-12-27 Die forming of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591138A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
US5259925A (en) * 1992-06-05 1993-11-09 Mcdonnell Douglas Corporation Method of cleaning a plurality of semiconductor devices
US5358590A (en) * 1992-04-08 1994-10-25 Sony Corporation Method of manufacturing individual element arrays
WO2003036712A1 (en) * 2001-10-19 2003-05-01 Applied Materials, Inc. Method and apparatus for dicing a semiconductor wafer
JP2016018139A (en) * 2014-07-10 2016-02-01 株式会社ディスコ Method for producing exposure mask

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
US5358590A (en) * 1992-04-08 1994-10-25 Sony Corporation Method of manufacturing individual element arrays
US5259925A (en) * 1992-06-05 1993-11-09 Mcdonnell Douglas Corporation Method of cleaning a plurality of semiconductor devices
WO2003036712A1 (en) * 2001-10-19 2003-05-01 Applied Materials, Inc. Method and apparatus for dicing a semiconductor wafer
JP2016018139A (en) * 2014-07-10 2016-02-01 株式会社ディスコ Method for producing exposure mask
CN105301891A (en) * 2014-07-10 2016-02-03 株式会社迪思科 Manufacturing method for exposure mask film

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