JP2016018139A - Method for producing exposure mask - Google Patents
Method for producing exposure mask Download PDFInfo
- Publication number
- JP2016018139A JP2016018139A JP2014142033A JP2014142033A JP2016018139A JP 2016018139 A JP2016018139 A JP 2016018139A JP 2014142033 A JP2014142033 A JP 2014142033A JP 2014142033 A JP2014142033 A JP 2014142033A JP 2016018139 A JP2016018139 A JP 2016018139A
- Authority
- JP
- Japan
- Prior art keywords
- light shielding
- wafer
- groove
- shielding material
- transparent plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 abstract description 25
- 238000005520 cutting process Methods 0.000 abstract description 14
- 238000007796 conventional method Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000000227 grinding Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Abstract
Description
本発明は、ウェーハを加工する際に使用される露光マスクの製造方法に関する。 The present invention relates to a method of manufacturing an exposure mask used when processing a wafer.
携帯電話に代表される小型軽量な電子機器では、ＩＣ、ＬＳＩ等の電子回路を備えるデバイスチップが必須の構成となっている。デバイスチップは、例えば、シリコン等の材料でなるウェーハの表面をストリートと呼ばれる複数の分割予定ラインで区画し、各領域に電子回路を形成した後、このストリートに沿ってウェーハを切断することで製造できる。 In a small and light electronic device typified by a mobile phone, a device chip including an electronic circuit such as an IC or LSI is an essential configuration. Device chips are manufactured by, for example, dividing the surface of a wafer made of a material such as silicon into a plurality of division lines called streets, forming an electronic circuit in each area, and then cutting the wafer along the streets. it can.
ウェーハを切断する際には、例えば、高速回転する切削ブレードをウェーハのストリートに切り込ませた上で、切削ブレード及びウェーハをストリートと平行な方向に相対移動させる。しかしながら、この方法では、ウェーハをストリートに沿って機械的に削り取るので、デバイスチップの抗折強度が低下しがちである。 When cutting the wafer, for example, a cutting blade rotating at high speed is cut into the street of the wafer, and then the cutting blade and the wafer are relatively moved in a direction parallel to the street. However, in this method, since the wafer is mechanically scraped along the street, the bending strength of the device chip tends to be lowered.
また、この方法では、切削ブレードをストリートに対して高精度に位置合わせした上で、各ストリートを個別に切削する必要があるので、加工の終了までに長い時間を要してしまう。特に、この問題は、切削すべき分割予定ラインの数が多いウェーハにおいて深刻である。 Further, in this method, it is necessary to position the cutting blade with respect to the streets with high accuracy and to cut each street individually, so that it takes a long time to finish the machining. This problem is particularly serious in a wafer having a large number of division lines to be cut.
そこで、近年では、プラズマエッチングを利用してウェーハを切断する方法が提案されている（例えば、特許文献１参照）。この方法では、プラズマエッチングでウェーハの全面を一度に加工できるので、デバイスチップの小型化、ウェーハの大型化等によって加工すべき分割予定ラインの数が増えても、加工時間は殆ど変わらずに済む。 Therefore, in recent years, a method of cutting a wafer using plasma etching has been proposed (for example, see Patent Document 1). In this method, since the entire surface of the wafer can be processed at once by plasma etching, the processing time hardly changes even if the number of division lines to be processed increases due to downsizing of the device chip, upsizing of the wafer, or the like. .
また、ウェーハを機械的に削り取るわけではないないので、加工時の欠け等を抑制し、デバイスチップの抗折強度を高く維持できる。なお、この方法では、ガラス基板の表面にクロム等でなる遮光膜のパターンが形成された露光マスク（例えば、特許文献２参照）を用いて、ウェーハの表裏面にエッチング用のレジスト膜を形成している。 Further, since the wafer is not mechanically scraped off, chipping during processing can be suppressed and the bending strength of the device chip can be maintained high. In this method, an etching resist film is formed on the front and back surfaces of the wafer using an exposure mask (for example, see Patent Document 2) in which a light-shielding film pattern made of chromium or the like is formed on the surface of the glass substrate. ing.
しかしながら、上述した露光マスクは、遮光膜の形成、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経て製造され、価格が高いので、この露光マスクを用いると、ウェーハの加工コストも高くなってしまう。 However, the above-described exposure mask is manufactured through complicated processes such as formation of a light shielding film, coating of a resist film, pattern drawing of a resist film, etching of the light shielding film, and the cost is high. The processing cost will be high.
本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供することである。 The present invention has been made in view of such problems, and an object of the present invention is to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process compared to a conventional method. is there.
本発明によれば、ウェーハ加工用の露光マスクの製造方法であって、加工するウェーハ以上の大きさを有し光を透過する透明板の、該ウェーハのストリートに対応する表面側の領域に、該透明板の裏面には至らない深さの溝を形成する溝形成工程と、該溝に遮光性を有する遮光材を埋設する遮光材埋設工程と、を備えたことを特徴とする露光マスクの製造方法が提供される。 According to the present invention, a method of manufacturing an exposure mask for wafer processing, in a transparent plate having a size larger than a wafer to be processed and transmitting light, in a region on the surface side corresponding to the street of the wafer, An exposure mask comprising: a groove forming step for forming a groove having a depth not reaching the back surface of the transparent plate; and a light shielding material embedding step for embedding a light shielding material having a light shielding property in the groove. A manufacturing method is provided.
本発明において、該遮光材埋設工程は、インクジェットノズルを有する埋設手段によって行われることが好ましい。 In the present invention, the light shielding material burying step is preferably performed by a burying means having an inkjet nozzle.
また、本発明において、該遮光材埋設工程では、該溝が形成された該透明板の表面全体に該遮光材を被覆して該溝に該遮光材を埋設した後、該透明板の該溝以外の表面を被覆した該遮光材を除去することが好ましい。 In the present invention, in the light shielding material embedding step, the light shielding material is covered over the entire surface of the transparent plate on which the groove is formed, and the light shielding material is buried in the groove, and then the groove of the transparent plate is formed. It is preferable to remove the light shielding material covering the other surface.
本発明に係る露光マスクの製造方法は、光を透過する透明板の表面側に、ウェーハのストリートに対応し透明板の裏面に至らない深さの溝を形成する溝形成工程と、溝に遮光性を有する遮光材を埋設する遮光材埋設工程と、を含んでいる。 The exposure mask manufacturing method according to the present invention includes a groove forming step of forming a groove having a depth corresponding to the street of the wafer and not reaching the back surface of the transparent plate on the front surface side of the transparent plate that transmits light, and shielding the groove. A light shielding material burying step of burying a light shielding material having a property.
そのため、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経ることなく、ウェーハのストリートに対応する遮光パターンを備えた露光マスクを製造できる。このように、本発明によれば、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供できる。 Therefore, an exposure mask having a light-shielding pattern corresponding to the street of the wafer can be manufactured without going through complicated processes such as resist film coating, resist film pattern drawing, and light-shielding film etching. Thus, according to the present invention, it is possible to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process as compared with the conventional method.
添付図面を参照して、本発明の実施形態について説明する。本実施形態に係る露光マスクの製造方法は、溝形成工程（図２（Ａ）及び図２（Ｂ）参照）、及び遮光材埋設工程（図３（Ａ）及び図３（Ｂ）参照）を含む。 Embodiments of the present invention will be described with reference to the accompanying drawings. The exposure mask manufacturing method according to this embodiment includes a groove forming step (see FIGS. 2A and 2B) and a light shielding material embedding step (see FIGS. 3A and 3B). Including.
溝形成工程では、光を透過する透明板の表面側に、ウェーハのストリートに対応し透明板の裏面に至らない深さの溝を形成する。遮光材埋設工程では、透明板の溝に遮光性を有する遮光材を埋設する。以下、本実施形態に係る露光マスクの製造方法について詳述する。 In the groove forming step, a groove having a depth corresponding to the street of the wafer and not reaching the back surface of the transparent plate is formed on the front surface side of the transparent plate that transmits light. In the light shielding material burying step, a light shielding material having light shielding properties is buried in the groove of the transparent plate. Hereinafter, the manufacturing method of the exposure mask which concerns on this embodiment is explained in full detail.
まず、本実施形態の露光マスクを用いて加工されるウェーハについて説明する。図１（Ａ）は、ウェーハの構成例を模式的に示す斜視図であり、図１（Ｂ）は、ウェーハの構成例を模式的に示す断面図である。 First, a wafer processed using the exposure mask of this embodiment will be described. FIG. 1A is a perspective view schematically illustrating a configuration example of a wafer, and FIG. 1B is a cross-sectional view schematically illustrating a configuration example of a wafer.
図１（Ａ）及び図１（Ｂ）に示すように、ウェーハ１１は、例えば、シリコン等の半導体材料で形成された略円形の板状物であり、表面１１ａは、中央のデバイス領域１３と、デバイス領域１３を囲む外周余剰領域１５とに分けられている。 As shown in FIGS. 1A and 1B, the wafer 11 is a substantially circular plate-like object formed of a semiconductor material such as silicon, for example, and the surface 11a has a central device region 13 and The outer peripheral surplus area 15 surrounding the device area 13 is divided.
デバイス領域１３は、格子状に配列されたストリート（分割予定ライン）１７でさらに複数の領域に区画されており、各領域には、ＩＣ等のデバイス１９が形成されている。ウェーハ１１の外周１１ｃは面取り加工されており、丸みを帯びている。 The device region 13 is further divided into a plurality of regions by streets (division planned lines) 17 arranged in a lattice pattern, and a device 19 such as an IC is formed in each region. The outer periphery 11c of the wafer 11 is chamfered and rounded.
本実施形態に係る露光マスクの製造方法では、上述したウェーハ１１のストリート１７に対応する遮光パターンを備えた露光マスクを製造する。具体的には、まず、ウェーハ１１のストリート１７に対応した溝を透明板に形成する溝形成工程を実施する。図２（Ａ）は、溝形成工程を模式的に示す斜視図であり、図２（Ｂ）は、溝形成工程後の透明板を模式的に示す断面図である。 In the exposure mask manufacturing method according to the present embodiment, an exposure mask having a light shielding pattern corresponding to the streets 17 of the wafer 11 described above is manufactured. Specifically, first, a groove forming process is performed in which grooves corresponding to the streets 17 of the wafer 11 are formed on the transparent plate. FIG. 2A is a perspective view schematically showing the groove forming step, and FIG. 2B is a cross-sectional view schematically showing the transparent plate after the groove forming step.
図２（Ａ）及び図２（Ｂ）に示すように、露光マスクの基材となる透明板２１は、ガラス、樹脂等の透明材料で形成された略円形の板状物であり、その直径は、例えば、ウェーハ１１の直径より大きくなっている。ただし、透明板２１は、ウェーハ１１と同径に形成されても良い。すなわち、透明板２１は、ウェーハ１１以上の大きさであれば良い。 As shown in FIGS. 2 (A) and 2 (B), the transparent plate 21 serving as the base material of the exposure mask is a substantially circular plate-like object formed of a transparent material such as glass or resin, and its diameter. Is larger than the diameter of the wafer 11, for example. However, the transparent plate 21 may be formed with the same diameter as the wafer 11. That is, the transparent plate 21 only needs to be larger than the wafer 11.
また、この透明板２１は、露光マスクに要求される任意の光学特性を備えている。具体的には、例えば、透明板２１は、レジスト材を硬化させるために用いる所定波長の光に対して透明である。ただし、透明板２１は、必ずしも可視光に対して透明である必要はない。 Further, the transparent plate 21 has arbitrary optical characteristics required for the exposure mask. Specifically, for example, the transparent plate 21 is transparent to light of a predetermined wavelength used for curing the resist material. However, the transparent plate 21 is not necessarily transparent to visible light.
溝形成工程では、図２（Ａ）に示すように、高速回転させた切削ブレード２を透明板２１の表面２１ａに切り込ませ、切削ブレード２と透明板２１とを水平方向に相対移動させる。ここで、切削ブレード２は、ウェーハ１１のストリート１７に対応する領域に切り込まれる。また、切削ブレード２の切り込み深さは、切削ブレード２が透明板２１の裏面２１ｂに達しない程度とする。 In the groove forming step, as shown in FIG. 2A, the cutting blade 2 rotated at a high speed is cut into the surface 21a of the transparent plate 21, and the cutting blade 2 and the transparent plate 21 are relatively moved in the horizontal direction. Here, the cutting blade 2 is cut into an area corresponding to the street 17 of the wafer 11. Further, the cutting depth of the cutting blade 2 is set so that the cutting blade 2 does not reach the back surface 21 b of the transparent plate 21.
これにより、透明板２１の表面２１ａ側に、ウェーハ１１のストリート１７に対応し透明板２１の裏面２１ｂに至らない深さの溝２３を形成できる。ウェーハ１１の全てのストリート１７に対応する溝２３が形成されると、溝形成工程は終了する。 Thereby, a groove 23 having a depth corresponding to the street 17 of the wafer 11 and not reaching the back surface 21 b of the transparent plate 21 can be formed on the front surface 21 a side of the transparent plate 21. When the grooves 23 corresponding to all the streets 17 of the wafer 11 are formed, the groove forming process ends.
溝形成工程の後には、透明板２１の溝２３に遮光性を有する遮光材を埋設する遮光材埋設工程を実施する。図３（Ａ）は、遮光材埋設工程を模式的に示す一部断面側面図であり、図３（Ｂ）は、遮光材埋設工程後の透明板２１を模式的に示す斜視図である。 After the groove forming step, a light shielding material burying step is performed in which a light shielding material having a light shielding property is buried in the groove 23 of the transparent plate 21. FIG. 3A is a partial cross-sectional side view schematically showing the light shielding material embedding step, and FIG. 3B is a perspective view schematically showing the transparent plate 21 after the light shielding material embedding step.
遮光材埋設工程では、例えば、図３（Ａ）に示すように、透明板２１の表面２１ａ側に配置されたインクジェットノズル（埋設手段）４を溝２３に沿って移動させながら、ナノメタルインクに代表される遮光性を備えた液体２５を溝２３に滴下する。 In the light shielding material embedding step, for example, as shown in FIG. 3A, the ink jet nozzle (embedding means) 4 disposed on the surface 21a side of the transparent plate 21 is moved along the groove 23 and is represented by nanometal ink. The liquid 25 having a light shielding property is dropped into the groove 23.
その後、溝２３に供給された液体２５を乾燥・硬化させることで、図３（Ａ）及び図３（Ｂ）に示すように、ウェーハ１１のストリート１７に対応する直線状の遮光材２７を形成できる。透明板２１の全ての溝２３に遮光材２７が埋設されると、露光マスクは完成する。 Thereafter, the liquid 25 supplied to the groove 23 is dried and cured, thereby forming a linear light shielding material 27 corresponding to the street 17 of the wafer 11 as shown in FIGS. 3 (A) and 3 (B). it can. When the light shielding material 27 is embedded in all the grooves 23 of the transparent plate 21, the exposure mask is completed.
以上のように、本発明に係る露光マスクの製造方法は、光を透過する透明板２１の表面２１ａ側に、ウェーハ１１のストリート１７に対応し透明板２１の裏面２１ｂに至らない深さの溝２３を形成する溝形成工程と、溝２３に遮光性を有する遮光材２７を埋設する遮光材埋設工程と、を含んでいる。 As described above, the exposure mask manufacturing method according to the present invention has a groove having a depth corresponding to the street 17 of the wafer 11 and not reaching the back surface 21b of the transparent plate 21 on the front surface 21a side of the transparent plate 21 that transmits light. And a light shielding material embedding step of embedding a light shielding material 27 having a light shielding property in the groove 23.
そのため、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経ることなく、ウェーハ１１のストリート１７に対応する遮光パターンを備えた露光マスクを製造できる。このように、本実施形態によれば、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供できる。 Therefore, an exposure mask having a light-shielding pattern corresponding to the street 17 of the wafer 11 can be manufactured without going through complicated steps such as resist film coating, resist film pattern drawing, and light-shielding film etching. As described above, according to the present embodiment, it is possible to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process compared to the conventional method.
なお、本発明は上記実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、インクジェットノズル４で液体２５を滴下するいわゆるインクジェット法を用いて溝２３に遮光材２７を埋設しているが、溝２３に遮光材２７を埋設する方法はこれに限定されない。 In addition, this invention is not limited to description of the said embodiment, A various change can be implemented. For example, in the above embodiment, the light shielding material 27 is embedded in the groove 23 using a so-called ink jet method in which the liquid 25 is dropped by the ink jet nozzle 4, but the method of embedding the light shielding material 27 in the groove 23 is not limited to this. .
図４（Ａ）は、遮光材埋設工程の変形例を模式的に示す断面図であり、図４（Ｂ）は、遮光材埋設工程の変形例を模式的に示す斜視図である。変形例に係る遮光材埋設工程では、まず、図４（Ａ）に示すように、透明板２１の表面２１ａ全体を被覆する遮光膜（遮光材）２９を形成する。遮光膜２９は、例えば、スパッタリング法やＣＶＤ法等により形成される金属膜であり、図４（Ａ）に示すように、その一部が溝２３に埋設されている。 FIG. 4A is a cross-sectional view schematically showing a modification example of the light shielding material embedding process, and FIG. 4B is a perspective view schematically showing a modification example of the light shielding material embedding process. In the light shielding material embedding step according to the modification, first, as shown in FIG. 4A, a light shielding film (light shielding material) 29 that covers the entire surface 21a of the transparent plate 21 is formed. The light shielding film 29 is a metal film formed by, for example, a sputtering method, a CVD method, or the like, and a part thereof is embedded in the groove 23 as shown in FIG.
次に、遮光膜２９の一部を除去して、透明板２１の表面２１ａを表出させる。遮光膜２９の除去は、例えば、図４（Ｂ）に示す研削装置１２で実施される。研削装置１２は、透明板２１を吸引保持する保持テーブル１４を備えている。保持テーブル１４の下方には、回転機構（不図示）が設けられており、保持テーブル１４は、この回転機構により鉛直軸の周りに回転する。 Next, a part of the light shielding film 29 is removed, and the surface 21a of the transparent plate 21 is exposed. The removal of the light shielding film 29 is performed by, for example, the grinding apparatus 12 shown in FIG. The grinding device 12 includes a holding table 14 that holds the transparent plate 21 by suction. A rotation mechanism (not shown) is provided below the holding table 14, and the holding table 14 rotates around the vertical axis by the rotation mechanism.
保持テーブル１４の表面（上面）は、透明板２１の裏面２１ｂ側を吸引保持する保持面となっている。この保持面には、保持テーブル１４の内部に形成された吸引路（不図示）を通じて吸引源（不図示）の負圧が作用し、透明板２１を吸引する吸引力が発生する。 The front surface (upper surface) of the holding table 14 is a holding surface that sucks and holds the back surface 21 b side of the transparent plate 21. A negative pressure of a suction source (not shown) acts on the holding surface through a suction path (not shown) formed inside the holding table 14, and a suction force for sucking the transparent plate 21 is generated.
保持テーブル１４の上方には、鉛直軸の周りに回転するスピンドル１６が配置されている。このスピンドル１６は、昇降機構（不図示）で昇降される。スピンドル１６の下端側には、円盤状のホイールマウント１８が固定されており、このホイールマウント１８には、研削ホイール２０が装着されている。 Above the holding table 14, a spindle 16 that rotates around a vertical axis is disposed. The spindle 16 is lifted and lowered by a lifting mechanism (not shown). A disc-shaped wheel mount 18 is fixed to the lower end side of the spindle 16, and a grinding wheel 20 is attached to the wheel mount 18.
研削ホイール２０は、アルミニウム、ステンレス等の金属材料で形成されたホイール基台２０ａを備えている。ホイール基台２０ａの円環状の下面には、全周にわたって複数の研削砥石２０ｂが固定されている。 The grinding wheel 20 includes a wheel base 20a formed of a metal material such as aluminum or stainless steel. A plurality of grinding wheels 20b are fixed to the annular lower surface of the wheel base 20a over the entire circumference.
遮光膜２９を除去する際には、まず、透明板２１の裏面２１ｂ側を保持テーブル１４の保持面に接触させて、吸引源の負圧を作用させる。これにより、透明板２１は、表面２１ａを被覆する遮光膜２９が上方に露出した状態で保持テーブル１４に吸引保持される。 When removing the light shielding film 29, first, the back surface 21 b side of the transparent plate 21 is brought into contact with the holding surface of the holding table 14 to apply the negative pressure of the suction source. Thereby, the transparent plate 21 is sucked and held by the holding table 14 with the light shielding film 29 covering the surface 21a exposed upward.
次に、保持テーブル１４とスピンドル１６とを、それぞれ所定の方向に回転させつつ、スピンドル１６を下降させ、図４（Ｂ）に示すように、遮光膜２９に研削砥石２０ｂを接触させる。スピンドル１６は、遮光膜２９の研削に適した送り速度で下降させる。 Next, the spindle 16 is lowered while rotating the holding table 14 and the spindle 16 in a predetermined direction, and the grinding wheel 20b is brought into contact with the light shielding film 29 as shown in FIG. 4B. The spindle 16 is lowered at a feed rate suitable for grinding the light shielding film 29.
透明板２１の表面２１ａが露出するまで遮光膜２９を研削すると、図３（Ｂ）に示すように、溝２３には、遮光膜２９の一部である遮光材２７が残る。このように、変形例に係る遮光材埋設工程を実施する場合にも、上記実施形態と同様の露光マスクを製造できる。 When the light shielding film 29 is ground until the surface 21a of the transparent plate 21 is exposed, the light shielding material 27 that is a part of the light shielding film 29 remains in the groove 23 as shown in FIG. Thus, also when implementing the light-shielding material embedding process according to the modification, an exposure mask similar to that in the above embodiment can be manufactured.
なお、上記変形例では、遮光膜２９を研削することで、溝２３に遮光材２７を残存させているが、エッチング等の別の方法で遮光膜２９を除去して、溝２３に遮光材２７を残存させても良い。 In the above modification, the light shielding film 27 is ground to leave the light shielding material 27 in the groove 23. However, the light shielding film 29 is removed by another method such as etching, and the light shielding material 27 is removed from the groove 23. May be allowed to remain.
その他、上記実施形態に係る構成、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the configurations, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the present invention.
１１ ウェーハ
１１ａ 表面
１１ｂ 裏面
１１ｃ 外周
１３ デバイス領域
１５ 外周余剰領域
１７ ストリート（分割予定ライン）
１９ デバイス
２１ 透明板
２１ａ 表面
２１ｂ 裏面
２３ 溝
２５ 液体
２７ 遮光材
２９ 遮光膜（遮光材）
２ 切削ブレード
４ インクジェットノズル（埋設手段）
１２ 研削装置
１４ 保持テーブル
１６ スピンドル
１８ ホイールマウント
２０ 研削ホイール
２０ａ ホイール基台
２０ｂ 研削砥石
DESCRIPTION OF SYMBOLS 11 Wafer 11a Front surface 11b Back surface 11c Outer periphery 13 Device area | region 15 Outer periphery excess area | region 17 Street (division plan line)
19 device 21 transparent plate 21a front surface 21b back surface 23 groove 25 liquid 27 light shielding material 29 light shielding film (light shielding material)
2 Cutting blade 4 Inkjet nozzle (embedding means)
12 Grinding device 14 Holding table 16 Spindle 18 Wheel mount 20 Grinding wheel 20a Wheel base 20b Grinding wheel
Claims (3)
加工するウェーハ以上の大きさを有し光を透過する透明板の、該ウェーハのストリートに対応する表面側の領域に、該透明板の裏面には至らない深さの溝を形成する溝形成工程と、
該溝に遮光性を有する遮光材を埋設する遮光材埋設工程と、を備えたことを特徴とする露光マスクの製造方法。 A method of manufacturing an exposure mask for wafer processing,
A groove forming step for forming a groove having a depth not reaching the back surface of the transparent plate in a region on the front surface side corresponding to the street of the wafer of a transparent plate having a size larger than the wafer to be processed and transmitting light When,
And a light shielding material embedding step of embedding a light shielding material having a light shielding property in the groove.
In the light shielding material embedding step, the light shielding material is coated on the entire surface of the transparent plate on which the groove is formed, and the light shielding material is buried in the groove, and then the surface of the transparent plate other than the groove is coated. The exposure mask manufacturing method according to claim 1, wherein the light shielding material is removed.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014142033A JP2016018139A (en) | 2014-07-10 | 2014-07-10 | Method for producing exposure mask |
| TW104116994A TW201602712A (en) | 2014-07-10 | 2015-05-27 | Exposure mask manufacturing method |
| CN201510353626.5A CN105301891A (en) | 2014-07-10 | 2015-06-24 | Manufacturing method for exposure mask film |
| KR1020150094667A KR20160007372A (en) | 2014-07-10 | 2015-07-02 | Method for manufacturing exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014142033A JP2016018139A (en) | 2014-07-10 | 2014-07-10 | Method for producing exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016018139A true JP2016018139A (en) | 2016-02-01 |
Family
ID=55199319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014142033A Pending JP2016018139A (en) | 2014-07-10 | 2014-07-10 | Method for producing exposure mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016018139A (en) |
| KR (1) | KR20160007372A (en) |
| CN (1) | CN105301891A (en) |
| TW (1) | TW201602712A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018036567A (en) * | 2016-09-01 | 2018-03-08 | 株式会社ディスコ | Production method of photomask for wafer processing |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6556673B2 (en) * | 2016-07-26 | 2019-08-07 | Hoya株式会社 | Photomask manufacturing method, drawing device, display device manufacturing method, photomask substrate inspection method, and photomask substrate inspection device |
Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591138A (en) * | 1978-12-27 | 1980-07-10 | Nec Corp | Die forming of semiconductor device |
| JPS6156349A (en) * | 1984-08-28 | 1986-03-22 | Nec Corp | Manufacture of photomask |
| JPS62201444A (en) * | 1986-02-28 | 1987-09-05 | Sharp Corp | Photomask and its production |
| JPS6488551A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| JPH01200258A (en) * | 1988-02-04 | 1989-08-11 | Hitachi Ltd | Formation of resist pattern having thickness distribution |
| JPH03179448A (en) * | 1989-12-08 | 1991-08-05 | Sharp Corp | Production of master for optical memory element and embedded photomask for optical memory element |
| JPH06301194A (en) * | 1993-04-15 | 1994-10-28 | Hitachi Ltd | Manufacture of photo-mask and photo-mask |
| US5403683A (en) * | 1987-09-30 | 1995-04-04 | Sharp Kabushiki Kaisha | Photo-mask |
| JPH08321478A (en) * | 1995-05-26 | 1996-12-03 | Nissan Motor Co Ltd | Manufacture of semiconductor device |
| JPH1126355A (en) * | 1997-07-07 | 1999-01-29 | Toshiba Corp | Exposure mask and manufacture of the same |
| JP2001005168A (en) * | 1999-06-22 | 2001-01-12 | Fuji Photo Film Co Ltd | Mask for near field exposure and its manufacture |
| JP2004228152A (en) * | 2003-01-20 | 2004-08-12 | Shinko Electric Ind Co Ltd | Wafer dicing method |
| JP2005279918A (en) * | 2004-03-04 | 2005-10-13 | Seiko Epson Corp | Method for manufacturing fine structure element, fine structure element manufactured by this method, spatial optical modulator and projector |
| JP2005352180A (en) * | 2004-06-10 | 2005-12-22 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| JP2006245102A (en) * | 2005-03-01 | 2006-09-14 | Disco Abrasive Syst Ltd | Exposure method |
| JP2006312206A (en) * | 2005-05-06 | 2006-11-16 | Tokyo Seimitsu Co Ltd | Grinding method |
| JP2006346843A (en) * | 2005-06-13 | 2006-12-28 | Kazumasa Onishi | Disc-like blade and cutting device |
| JP2007298805A (en) * | 2006-05-01 | 2007-11-15 | Seiko Epson Corp | Photomask, method for manufacturing photomask, device for manufacturing photomask, and circuit board |
| JP2012199437A (en) * | 2011-03-22 | 2012-10-18 | Toshiba Corp | Method of manufacturing semiconductor element and photomask |
| JP2012204409A (en) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | Method of manufacturing photomask and method of manufacturing semiconductor device |
| JP2013062429A (en) * | 2011-09-14 | 2013-04-04 | Disco Abrasive Syst Ltd | Method for cutting workpiece |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1313792C (en) * | 1986-02-28 | 1993-02-23 | Junji Hirokane | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| KR0166497B1 (en) * | 1995-03-24 | 1999-01-15 | 김주용 | Phase inversion mask and the method of production therefrom |
| CN103119698B (en) * | 2010-09-30 | 2016-05-18 | 富士电机株式会社 | The manufacture method of semiconductor device |
-
2014
- 2014-07-10 JP JP2014142033A patent/JP2016018139A/en active Pending
-
2015
- 2015-05-27 TW TW104116994A patent/TW201602712A/en unknown
- 2015-06-24 CN CN201510353626.5A patent/CN105301891A/en active Pending
- 2015-07-02 KR KR1020150094667A patent/KR20160007372A/en unknown
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591138A (en) * | 1978-12-27 | 1980-07-10 | Nec Corp | Die forming of semiconductor device |
| JPS6156349A (en) * | 1984-08-28 | 1986-03-22 | Nec Corp | Manufacture of photomask |
| JPS62201444A (en) * | 1986-02-28 | 1987-09-05 | Sharp Corp | Photomask and its production |
| JPS6488551A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| US5403683A (en) * | 1987-09-30 | 1995-04-04 | Sharp Kabushiki Kaisha | Photo-mask |
| JPH01200258A (en) * | 1988-02-04 | 1989-08-11 | Hitachi Ltd | Formation of resist pattern having thickness distribution |
| JPH03179448A (en) * | 1989-12-08 | 1991-08-05 | Sharp Corp | Production of master for optical memory element and embedded photomask for optical memory element |
| JPH06301194A (en) * | 1993-04-15 | 1994-10-28 | Hitachi Ltd | Manufacture of photo-mask and photo-mask |
| JPH08321478A (en) * | 1995-05-26 | 1996-12-03 | Nissan Motor Co Ltd | Manufacture of semiconductor device |
| JPH1126355A (en) * | 1997-07-07 | 1999-01-29 | Toshiba Corp | Exposure mask and manufacture of the same |
| JP2001005168A (en) * | 1999-06-22 | 2001-01-12 | Fuji Photo Film Co Ltd | Mask for near field exposure and its manufacture |
| JP2004228152A (en) * | 2003-01-20 | 2004-08-12 | Shinko Electric Ind Co Ltd | Wafer dicing method |
| JP2005279918A (en) * | 2004-03-04 | 2005-10-13 | Seiko Epson Corp | Method for manufacturing fine structure element, fine structure element manufactured by this method, spatial optical modulator and projector |
| JP2005352180A (en) * | 2004-06-10 | 2005-12-22 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| JP2006245102A (en) * | 2005-03-01 | 2006-09-14 | Disco Abrasive Syst Ltd | Exposure method |
| JP2006312206A (en) * | 2005-05-06 | 2006-11-16 | Tokyo Seimitsu Co Ltd | Grinding method |
| JP2006346843A (en) * | 2005-06-13 | 2006-12-28 | Kazumasa Onishi | Disc-like blade and cutting device |
| JP2007298805A (en) * | 2006-05-01 | 2007-11-15 | Seiko Epson Corp | Photomask, method for manufacturing photomask, device for manufacturing photomask, and circuit board |
| JP2012199437A (en) * | 2011-03-22 | 2012-10-18 | Toshiba Corp | Method of manufacturing semiconductor element and photomask |
| JP2012204409A (en) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | Method of manufacturing photomask and method of manufacturing semiconductor device |
| JP2013062429A (en) * | 2011-09-14 | 2013-04-04 | Disco Abrasive Syst Ltd | Method for cutting workpiece |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018036567A (en) * | 2016-09-01 | 2018-03-08 | 株式会社ディスコ | Production method of photomask for wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105301891A (en) | 2016-02-03 |
| KR20160007372A (en) | 2016-01-20 |
| TW201602712A (en) | 2016-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105097482B (en) | Method for processing wafer | |
| JP5349982B2 (en) | Processing method for wafer with substrate | |
| US20190148132A1 (en) | Method of manufacturing small-diameter wafer | |
| JP2016201519A (en) | Method for manufacturing device package | |
| JP6298723B2 (en) | Bonded wafer forming method | |
| TW201308414A (en) | Cutting method of processed object | |
| JP2018041915A (en) | Wafer and processing method of wafer | |
| JP2016100346A (en) | Wafer processing method | |
| JP2016018139A (en) | Method for producing exposure mask | |
| JP2016219757A (en) | Method of dividing workpiece | |
| JP5441587B2 (en) | Wafer processing method | |
| JP6486176B2 (en) | Workpiece cutting method | |
| US9704749B2 (en) | Method of dividing wafer into dies | |
| JP2012146889A (en) | Method for grinding wafer | |
| KR102069905B1 (en) | Method for manufacturing photomask | |
| JP6594153B2 (en) | Wafer processing method | |
| JP6563766B2 (en) | Wafer processing method | |
| JP2016018187A (en) | Method for producing exposure mask | |
| JP2017011134A (en) | Method for manufacturing device chip | |
| JP2016187004A (en) | Processing method of wafer | |
| JP6137999B2 (en) | Wafer processing method | |
| JP2012222134A (en) | Wafer grinding method | |
| JP6195483B2 (en) | Laminated wafer processing method | |
| JP2014044999A (en) | Wafer processing method | |
| JP2017108001A (en) | Processing method of wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170516 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180116 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180312 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190122 |