KR20160007372A - Method for manufacturing exposure mask - Google Patents

Method for manufacturing exposure mask Download PDF

Info

Publication number
KR20160007372A
KR20160007372A KR1020150094667A KR20150094667A KR20160007372A KR 20160007372 A KR20160007372 A KR 20160007372A KR 1020150094667 A KR1020150094667 A KR 1020150094667A KR 20150094667 A KR20150094667 A KR 20150094667A KR 20160007372 A KR20160007372 A KR 20160007372A
Authority
KR
South Korea
Prior art keywords
light
wafer
shielding material
transparent plate
groove
Prior art date
Application number
KR1020150094667A
Other languages
Korean (ko)
Inventor
사카에 마츠자키
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20160007372A publication Critical patent/KR20160007372A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

An object of the present invention is to provide a manufacturing method of an exposure mask which can manufacture an exposure mask at a low cost with a simple process as compared with a conventional method.
A method for manufacturing an exposure mask for wafer processing, comprising the steps of: forming a transparent plate (21) having a size larger than a wafer (11) to be processed and transmitting light, A groove forming step of forming a groove 23 having a depth not reaching the back surface 21b of the groove 21 and a light shielding material filling step of filling a light shielding material 27 having a light shielding property in the groove.

Description

METHOD FOR MANUFACTURING EXPOSURE MASK [0002]

The present invention relates to a method of manufacturing an exposure mask used for processing a wafer.

In a small-sized and lightweight electronic apparatus typified by a cellular phone, a device chip having an electronic circuit such as an IC or an LSI is essential. The device chip can be manufactured by, for example, dividing the surface of a wafer made of a material such as silicon into a plurality of lines to be divided called streets, forming an electronic circuit in each area, and cutting the wafer along the street .

When the wafer is cut, for example, a cutting blade that rotates at a high speed is inserted into a street of the wafer, and then the cutting blade and the wafer are relatively moved in a direction parallel to the street. However, in this method, since the wafer is mechanically shaved along the street, the transverse strength of the device chip is liable to be lowered.

Further, in this method, since it is necessary to individually cut the respective blades after precisely aligning the cutting blades with respect to the streets, it takes a long time until the end of the machining. Particularly, this problem is serious in wafers having a large number of lines to be divided to be cut.

Therefore, recently, a method of cutting a wafer by plasma etching has been proposed (for example, see Patent Document 1). In this method, the entire surface of the wafer can be processed at one time by the plasma etching. Therefore, even if the number of lines to be divided to be processed increases with the downsizing of the device chip and the wafer size, the processing time is almost unchanged.

Further, since the wafer is not mechanically shaved, chipping or the like at the time of processing can be suppressed, and the transverse strength of the device chip can be maintained at a high level. Further, in this method, an etching resist film is formed on the front and back surfaces of the wafer using an exposure mask (see, for example, Patent Document 2) in which a pattern of a light-shielding film made of chromium or the like is formed on the surface of the glass substrate.

[Prior Art Literature]

[Patent Document 1] Japanese Unexamined Patent Application Publication No. 2006-114825

[Patent Document 2] Japanese Unexamined Patent Publication No. 62-229151

However, the exposure mask described above is manufactured through a complicated process such as formation of a light-shielding film, coating of a resist film, patterning of a resist film, etching of a light-shielding film, and is expensive. .

SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and an object of the present invention is to provide a manufacturing method of an exposure mask which can manufacture an exposure mask at a low cost in a simple process as compared with the conventional method.

According to the present invention, there is provided a method of manufacturing an exposure mask for wafer processing, comprising the steps of: providing a transparent plate having a size larger than a wafer to be processed and transmitting light, A groove forming step of forming a groove of the light shielding material in the groove and a light shielding material filling step of burying the light shielding material having a light shielding property in the groove.

In the present invention, it is preferable that the light-shielding material-embedding step is performed by embedding means having an ink-jet nozzle.

Further, in the present invention, in the step of embedding the light-shielding material, the light-shielding material is coated on the entire surface of the transparent plate on which the grooves are formed, the light-blocking material is embedded in the grooves, It is preferable to remove the light shielding material coated on the surface.

A manufacturing method of an exposure mask according to the present invention is characterized by comprising a groove forming step of forming a groove with a depth not reaching the back surface of the transparent plate corresponding to the street of the wafer on the surface side of the transparent plate through which light is transmitted, And a light-shielding material embedding step for embedding the light-shielding material having the light-shielding material.

Therefore, an exposure mask having a light-shielding pattern corresponding to a street of a wafer can be manufactured without complicated processes such as coating of a resist film, patterning of a resist film, and etching of a light-shielding film. As described above, according to the present invention, it is possible to provide a manufacturing method of an exposure mask which can manufacture an exposure mask at a low cost with a simple process as compared with the conventional method.

FIG. 1 (A) is a perspective view schematically showing a configuration example of a wafer, and FIG. 1 (B) is a sectional view schematically showing a configuration example of a wafer.
FIG. 2A is a perspective view schematically showing a groove forming process, and FIG. 2B is a sectional view schematically showing a transparent plate after a groove forming process.
Fig. 3 (A) is a partial sectional side view schematically showing the light-shielding material-embedding process, and Fig. 3 (B) is a perspective view schematically showing a transparent plate after the light-shielding material-embedding process.
Fig. 4 (A) is a cross-sectional view that schematically shows a modification of the light-shielding material-embedding process, and Fig. 4 (B) is a perspective view that schematically shows a modification of the light-

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the accompanying drawings. The method for manufacturing an exposure mask according to the present embodiment is characterized in that the groove forming step (see FIGS. 2A and 2B) and the light shielding material filling step (FIG. 3A and FIG. 3B )).

In the groove forming step, a groove having a depth not reaching the back surface of the transparent plate corresponding to the street of the wafer is formed on the surface side of the transparent plate through which light is transmitted. In the light insulating material submerged step, a light shielding material having a light shielding property is buried in the groove of the transparent plate. Hereinafter, a method of manufacturing an exposure mask according to the present embodiment will be described in detail.

First, a wafer to be processed by using the exposure mask of the present embodiment will be described. FIG. 1 (A) is a perspective view schematically showing a configuration example of a wafer, and FIG. 1 (B) is a sectional view schematically showing a configuration example of a wafer.

1 (A) and 1 (B), the wafer 11 is a substantially circular plate-shaped material formed of a semiconductor material such as silicon, for example, and has a surface 11a, Is divided into a central device area 13 and an outer peripheral surplus area 15 surrounding the device area 13.

The device region 13 is further divided into a plurality of regions by streets (line to be divided) 17 arranged in a lattice pattern, and devices 19 such as ICs are formed in each region. The outer periphery 11c of the wafer 11 is chamfered and rounded.

In the method of manufacturing an exposure mask according to the present embodiment, an exposure mask having a light shielding pattern corresponding to the street 17 of the wafer 11 described above is manufactured. Concretely, first, a groove forming step is performed in which a groove corresponding to the street 17 of the wafer 11 is formed on the transparent plate. FIG. 2A is a perspective view schematically showing a groove forming process, and FIG. 2B is a sectional view schematically showing a transparent plate after a groove forming process.

2 (A) and 2 (B), the transparent plate 21 to be the base of the exposure mask is a substantially circular plate-like material formed of a transparent material such as glass or resin, For example, larger than the diameter of the wafer 11. However, the transparent plate 21 may be formed to have the same diameter as the wafer 11. That is, the transparent plate 21 may have a size larger than that of the wafer 11.

Further, the transparent plate 21 has arbitrary optical characteristics required for the exposure mask. Specifically, for example, the transparent plate 21 is transparent to light of a predetermined wavelength used for curing the resist material. However, the transparent plate 21 does not necessarily have to be transparent to visible light.

2 (A), the cutting blade 2 rotated at a high speed is cut into the surface 21a of the transparent plate 21 so that the cutting blade 2 and the transparent plate 21 ) Relative to each other in the horizontal direction. Here, the cutting blade 2 is inserted into a region corresponding to the street 17 of the wafer 11. The cutting depth of the cutting blade 2 is set to such a degree that the cutting blade 2 does not reach the back surface 21b of the transparent plate 21.

A groove 23 having a depth not reaching the back surface 21b of the transparent plate 21 corresponding to the street 17 of the wafer 11 is formed on the surface 21a side of the transparent plate 21 . When the grooves 23 corresponding to all the streets 17 of the wafer 11 are formed, the groove forming process is finished.

After the groove forming process, a light-shielding material filling step for filling a light-shielding material having a light-shielding property into the groove 23 of the transparent plate 21 is carried out. 3 (A) is a partial cross-sectional side view schematically showing the light-shielding material-embedding process and FIG. 3 (B) is a perspective view schematically showing the transparent plate 21 after the light-shielding material-embedding process.

3 (A), the ink jet nozzles (buried means) 4 disposed on the surface 21a side of the transparent plate 21 are arranged along the grooves 23 The liquid 25 having a light-shielding characteristic represented by a nano-metal ink is dropped into the groove 23.

Thereafter, the liquid 25 supplied to the grooves 23 is dried and cured so as to correspond to the streets 17 of the wafers 11 as shown in Figs. 3 (A) and 3 (B) It is possible to form a light shielding material 27 of a linear shape. When the light shielding material 27 is embedded in all the grooves 23 of the transparent plate 21, the exposure mask is completed.

As described above, the method of manufacturing an exposure mask according to the present invention is characterized in that the transparent mask 21 is provided on the side of the surface 21a of the transparent plate 21 through which light is transmitted, A groove forming step of forming a groove 23 having a depth not reaching the back surface 21b and a light shielding material filling step of burying the light shielding material 27 having a light shielding property in the groove 23. [

Therefore, an exposure mask having a light-shielding pattern corresponding to the streets 17 of the wafer 11 can be manufactured without complicated processes such as coating of a resist film, patterning of a resist film, and etching of a light-shielding film. As described above, according to the present embodiment, it is possible to provide a manufacturing method of an exposure mask that can manufacture an exposure mask at a low cost with a simple process as compared with the conventional method.

The present invention is not limited to the description of the above embodiment, but may be modified in various ways. For example, in the above embodiment, the light shielding material 27 is embedded in the groove 23 using a so-called inkjet method in which the liquid 25 is dropped into the inkjet nozzle 4, 27 are not limited to this.

Fig. 4 (A) is a cross-sectional view that schematically shows a modification of the light-shielding material-embedding process, and Fig. 4 (B) is a perspective view that schematically shows a modification of the light- A light shielding film (light shielding material) 29 for covering the entire surface 21a of the transparent plate 21 is first formed, as shown in Fig. 4 (A). The light shielding film 29 is a metal film formed by, for example, a sputtering method or a CVD method, and a part of the light shielding film 29 is buried in the groove 23, as shown in Fig.

Next, a part of the light shielding film 29 is removed, and the surface 21a of the transparent plate 21 is exposed. The removal of the light shielding film 29 is carried out, for example, by the grinding apparatus 12 shown in Fig. 4 (B). The grinding apparatus 12 is provided with a holding table 14 for holding the transparent plate 21 by suction. Under the holding table 14, a rotating mechanism (not shown) is provided, and the holding table 14 is rotated around the vertical axis by the rotating mechanism.

The surface (upper surface) of the holding table 14 serves as a holding surface for holding the back surface 21b side of the transparent plate 21 by suction. A negative pressure of a suction source (not shown) acts on the holding surface through a suction path (not shown) formed in the holding table 14, and a suction force for sucking the transparent plate 21 is generated.

Above the holding table 14, a spindle 16 that rotates about a vertical axis is disposed. The spindle 16 is lifted and lowered by a lifting mechanism (not shown). A disk-shaped wheel mount 18 is fixed to the lower end of the spindle 16. A grinding wheel 20 is mounted on the wheel mount 18. [

The grinding wheel 20 has a wheel base 20a formed of a metal material such as aluminum or stainless steel. A plurality of grinding wheels 20b are fixed to the lower surface of the annular shape of the wheel base 20a over the entire periphery.

When the light shielding film 29 is removed, first, the back surface 21b side of the transparent plate 21 is brought into contact with the holding surface of the holding table 14 to apply a negative pressure of the suction source. The transparent plate 21 is attracted and held by the holding table 14 in a state in which the light shielding film 29 covering the surface 21a is exposed upward.

Next, the spindle 16 is lowered while the holding table 14 and the spindle 16 are rotated in respective predetermined directions, and the grinding wheel 29 (see Fig. 4 20b. The spindle 16 is lowered at a conveyance speed suitable for grinding of the light shielding film 29.

The light shielding film 29 is grinded until the surface 21a of the transparent plate 21 is exposed so that the light shielding film 29 is formed in the groove 23 as shown in Fig. 27) is left. Thus, even when the light-shielding material-embedded process according to the modification is carried out, the same exposure mask as in the above-described embodiment can be produced.

Although the shielding film 27 is left in the groove 23 by grinding the light shielding film 29 in this modified example, the light shielding film 29 may be removed by another method such as etching, The light shielding material 27 may remain.

In addition, the configuration, method, and the like according to the above-described embodiments can be appropriately changed without departing from the object of the present invention.

11: wafer 11a: surface
11b: Back side 11c: Outer side
13: Device area 15: Outer redundancy area
17: Street (line to be divided) 19: Device
21: transparent plate 21a: surface
21b: back side 23: home
25: liquid 27:
29: light shielding film (light shielding material) 2: cutting blade
4: Ink-jet nozzle (burial means) 12: Grinding device
14: Holding table 16: Spindle
18: Wheel mount 20: Grinding wheel
20a: Wheel base 20b: Grinding wheel

Claims (3)

A method of manufacturing an exposure mask for wafer processing,
A groove forming step of forming a groove having a depth not reaching to the back surface of the transparent plate on a surface side area of the transparent plate that has a size equal to or larger than the size of a wafer to be processed and which corresponds to the street of the wafer,
A light-shielding material-embedding process in which a light-shielding material having a light-
Wherein the mask is formed on the substrate. The method of manufacturing an exposure mask according to claim 1, wherein the light-shielding material-embedding process is performed by embedding means having an ink-jet nozzle. The method according to claim 1, wherein in the step of embedding the light-shielding material, after the light-shielding material is coated on the entire surface of the transparent plate on which the groove is formed and the light-blocking material is embedded in the groove, Wherein the light shielding material coated with the light shielding material is removed.
KR1020150094667A 2014-07-10 2015-07-02 Method for manufacturing exposure mask KR20160007372A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-142033 2014-07-10
JP2014142033A JP2016018139A (en) 2014-07-10 2014-07-10 Method for producing exposure mask

Publications (1)

Publication Number Publication Date
KR20160007372A true KR20160007372A (en) 2016-01-20

Family

ID=55199319

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150094667A KR20160007372A (en) 2014-07-10 2015-07-02 Method for manufacturing exposure mask

Country Status (4)

Country Link
JP (1) JP2016018139A (en)
KR (1) KR20160007372A (en)
CN (1) CN105301891A (en)
TW (1) TW201602712A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6556673B2 (en) * 2016-07-26 2019-08-07 Hoya株式会社 Photomask manufacturing method, drawing device, display device manufacturing method, photomask substrate inspection method, and photomask substrate inspection device
JP2018036567A (en) * 2016-09-01 2018-03-08 株式会社ディスコ Production method of photomask for wafer processing

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591138A (en) * 1978-12-27 1980-07-10 Nec Corp Die forming of semiconductor device
JPS6156349A (en) * 1984-08-28 1986-03-22 Nec Corp Manufacture of photomask
CA1313792C (en) * 1986-02-28 1993-02-23 Junji Hirokane Method of manufacturing photo-mask and photo-mask manufactured thereby
JPS62201444A (en) * 1986-02-28 1987-09-05 Sharp Corp Photomask and its production
US5260150A (en) * 1987-09-30 1993-11-09 Sharp Kabushiki Kaisha Photo-mask with light shielding film buried in substrate
JPS6488551A (en) * 1987-09-30 1989-04-03 Sharp Kk Photomask
JPH0830890B2 (en) * 1988-02-04 1996-03-27 株式会社日立製作所 Method of forming resist pattern having thickness distribution
JPH03179448A (en) * 1989-12-08 1991-08-05 Sharp Corp Production of master for optical memory element and embedded photomask for optical memory element
JPH06301194A (en) * 1993-04-15 1994-10-28 Hitachi Ltd Manufacture of photo-mask and photo-mask
KR0166497B1 (en) * 1995-03-24 1999-01-15 김주용 Phase inversion mask and the method of production therefrom
JPH08321478A (en) * 1995-05-26 1996-12-03 Nissan Motor Co Ltd Manufacture of semiconductor device
JPH1126355A (en) * 1997-07-07 1999-01-29 Toshiba Corp Exposure mask and manufacture of the same
JP2001005168A (en) * 1999-06-22 2001-01-12 Fuji Photo Film Co Ltd Mask for near field exposure and its manufacture
JP2004228152A (en) * 2003-01-20 2004-08-12 Shinko Electric Ind Co Ltd Wafer dicing method
JP2005279918A (en) * 2004-03-04 2005-10-13 Seiko Epson Corp Method for manufacturing fine structure element, fine structure element manufactured by this method, spatial optical modulator and projector
JP2005352180A (en) * 2004-06-10 2005-12-22 Renesas Technology Corp Method for manufacturing semiconductor device
JP4640941B2 (en) * 2005-03-01 2011-03-02 株式会社ディスコ Exposure method
JP2006312206A (en) * 2005-05-06 2006-11-16 Tokyo Seimitsu Co Ltd Grinding method
JP2006346843A (en) * 2005-06-13 2006-12-28 Kazumasa Onishi Disc-like blade and cutting device
JP4797783B2 (en) * 2006-05-01 2011-10-19 セイコーエプソン株式会社 Photomask manufacturing method and photomask manufacturing apparatus
CN103119698B (en) * 2010-09-30 2016-05-18 富士电机株式会社 The manufacture method of semiconductor device
JP2012199437A (en) * 2011-03-22 2012-10-18 Toshiba Corp Method of manufacturing semiconductor element and photomask
JP2012204409A (en) * 2011-03-23 2012-10-22 Toshiba Corp Method of manufacturing photomask and method of manufacturing semiconductor device
JP5839905B2 (en) * 2011-09-14 2016-01-06 株式会社ディスコ Workpiece cutting method

Also Published As

Publication number Publication date
TW201602712A (en) 2016-01-16
CN105301891A (en) 2016-02-03
JP2016018139A (en) 2016-02-01

Similar Documents

Publication Publication Date Title
CN105097482B (en) Method for processing wafer
US10032669B2 (en) Wafer dividing method
JP6341709B2 (en) Wafer processing method
JP6013858B2 (en) Wafer processing method
US20190148132A1 (en) Method of manufacturing small-diameter wafer
CN105261560A (en) Method for machining wafer
KR102503524B1 (en) Method of manufacturing device chip
TWI767022B (en) Substrate processing method and substrate processing system
JP6489970B2 (en) Chuck table manufacturing method and processing apparatus
JP2016100346A (en) Wafer processing method
KR20160007372A (en) Method for manufacturing exposure mask
TWI685556B (en) Cutting processing method of workpiece
US9704749B2 (en) Method of dividing wafer into dies
KR102069905B1 (en) Method for manufacturing photomask
KR20160007395A (en) Method for manufacturing exposure mask
JP6563766B2 (en) Wafer processing method
TWI813624B (en) Wafer processing method
JP7171138B2 (en) Device chip manufacturing method
JP6137999B2 (en) Wafer processing method
JP2012222134A (en) Wafer grinding method
JP7305276B2 (en) Workpiece holding method
JP2023040747A (en) Wafer processing method
CN114464572A (en) Method for processing wafer
JP2007266250A (en) Wafer
JP2020061495A (en) Wafer processing method