JPS6488551A - Photomask - Google Patents

Photomask

Info

Publication number
JPS6488551A
JPS6488551A JP24665587A JP24665587A JPS6488551A JP S6488551 A JPS6488551 A JP S6488551A JP 24665587 A JP24665587 A JP 24665587A JP 24665587 A JP24665587 A JP 24665587A JP S6488551 A JPS6488551 A JP S6488551A
Authority
JP
Japan
Prior art keywords
mask substrate
light shielding
mask
photomask
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24665587A
Other languages
Japanese (ja)
Inventor
Kenji Ota
Junji Hirokane
Tetsuya Inui
Yoshiyuki Nagahara
Akira Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP24665587A priority Critical patent/JPS6488551A/en
Priority to CA000578870A priority patent/CA1315023C/en
Priority to EP93202205A priority patent/EP0574092B1/en
Priority to DE3889053T priority patent/DE3889053T2/en
Priority to DE3856089T priority patent/DE3856089T2/en
Priority to EP88309089A priority patent/EP0310412B1/en
Publication of JPS6488551A publication Critical patent/JPS6488551A/en
Priority to US07/631,277 priority patent/US5260150A/en
Priority to CA000616373A priority patent/CA1322685C/en
Priority to US08/102,229 priority patent/US5403683A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a photomask which is capable of suppressing the generation of sticking by adopting the constitution in which the height of the surface of a light transmissive mask substrate on the side embedded with light shielding films forming a mask pattern is different from the height of the surface of the light shielding films to the photomask formed by embedding the above- mentioned light shielding films in the mask substrate. CONSTITUTION:Plural metallic films 2... which are the light shielding films are embedded in the upper part of the mask substrate 1. Only the lower parts of the metallic films 2 embedded in the mask substrate 1 and the upper parts thereof project from the surfaces of the mask substrate 1. The surface of the metallic films 2 is, therefore, higher than the surface of the mask substrate 1 to form the mask pattern and to shut off the light for exposing such as UV rays projected on the mask substrate 1. The contact surface area of the mask pattern is decreased and the generation of the sticking is suppressed at the time of contact transfer of said pattern to a resist according to this constitution. The exfoliation of the resist is thereby decreased and the number of cleaning times of the photomask is decreased. The workability is thus improved.
JP24665587A 1987-09-30 1987-09-30 Photomask Pending JPS6488551A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP24665587A JPS6488551A (en) 1987-09-30 1987-09-30 Photomask
CA000578870A CA1315023C (en) 1987-09-30 1988-09-29 Photo-mask
EP93202205A EP0574092B1 (en) 1987-09-30 1988-09-30 Photo-masks
DE3889053T DE3889053T2 (en) 1987-09-30 1988-09-30 Photomasks.
DE3856089T DE3856089T2 (en) 1987-09-30 1988-09-30 Photomasks
EP88309089A EP0310412B1 (en) 1987-09-30 1988-09-30 Improvements in photo-masks
US07/631,277 US5260150A (en) 1987-09-30 1990-12-20 Photo-mask with light shielding film buried in substrate
CA000616373A CA1322685C (en) 1987-09-30 1992-05-07 Photo-mask
US08/102,229 US5403683A (en) 1987-09-30 1993-08-05 Photo-mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24665587A JPS6488551A (en) 1987-09-30 1987-09-30 Photomask

Publications (1)

Publication Number Publication Date
JPS6488551A true JPS6488551A (en) 1989-04-03

Family

ID=17151647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24665587A Pending JPS6488551A (en) 1987-09-30 1987-09-30 Photomask

Country Status (1)

Country Link
JP (1) JPS6488551A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018139A (en) * 2014-07-10 2016-02-01 株式会社ディスコ Method for producing exposure mask
US10845699B2 (en) * 2017-11-29 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming photomask and photolithography method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201444A (en) * 1986-02-28 1987-09-05 Sharp Corp Photomask and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201444A (en) * 1986-02-28 1987-09-05 Sharp Corp Photomask and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018139A (en) * 2014-07-10 2016-02-01 株式会社ディスコ Method for producing exposure mask
US10845699B2 (en) * 2017-11-29 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming photomask and photolithography method
US11307492B2 (en) 2017-11-29 2022-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming photomask and photolithography method

Similar Documents

Publication Publication Date Title
MY100941A (en) A process of forming a negative patern in a photoresist layer.
JPS57211732A (en) X ray exposing mask and manufacture thereof
JPS57202537A (en) Resist composition for dry development
JPS6488551A (en) Photomask
JPS5630129A (en) Manufacture of photomask
GB9515230D0 (en) Method of manufacturing a photo mask for manufacturing a semiconductor device
JPS6464220A (en) Forming method for resist pattern
JPH01154414A (en) Manufacture of light radiation type contact rubber
JPS56165325A (en) Formation of pattern
JPS5724538A (en) Preparation of semiconductor device
JPS56153738A (en) Method for contact exposure
JPS5347825A (en) Photoresist exposure
JPS5689741A (en) Dryplate for photomasking
JPS5790627A (en) Projecting exposure method
JPS5723940A (en) Master-mask manufacturing device and mask plate
JPS6450423A (en) Formation of resist-pattern
JPS56165324A (en) Formation of pattern
JPS6442820A (en) Manufacture of semiconductor integrated circuit
JPS57101837A (en) Photomask
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS56110232A (en) Pattern formation with soft x-ray
JPS5744150A (en) Photomask
JPS63208050A (en) Apparatus for producing mask
JPS5681844A (en) Production of photomask for ic with airflow passage
TW239230B (en) Metal lithography