JPS5744150A - Photomask - Google Patents

Photomask

Info

Publication number
JPS5744150A
JPS5744150A JP11831080A JP11831080A JPS5744150A JP S5744150 A JPS5744150 A JP S5744150A JP 11831080 A JP11831080 A JP 11831080A JP 11831080 A JP11831080 A JP 11831080A JP S5744150 A JPS5744150 A JP S5744150A
Authority
JP
Japan
Prior art keywords
mask
pattern
photomask
film
emulsion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11831080A
Other languages
Japanese (ja)
Inventor
Hitoshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11831080A priority Critical patent/JPS5744150A/en
Publication of JPS5744150A publication Critical patent/JPS5744150A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To facilitate high-precision pattern printing by proximity exposure by using a photomask having two layers in the same pattern with a transparent protective film interposed. CONSTITUTION:On the surface of a mask 11, a transparent protective film 13 is formed to uniform film thickness and on it, an emulsion film for an emulsion mask or a chromium film for a chromium mask is formed. The pattern of the mask 11 is used as an exposure mask pattern to form a mask 12. Using the photomask having two thus formed layers provides light intensity distribution 3b on a resist surface 2 by projected light L. Consequently, high-precision pattern printing by proximity exposure which is performed without the mask and a substrate in contact is facilitated.
JP11831080A 1980-08-29 1980-08-29 Photomask Pending JPS5744150A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11831080A JPS5744150A (en) 1980-08-29 1980-08-29 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11831080A JPS5744150A (en) 1980-08-29 1980-08-29 Photomask

Publications (1)

Publication Number Publication Date
JPS5744150A true JPS5744150A (en) 1982-03-12

Family

ID=14733506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11831080A Pending JPS5744150A (en) 1980-08-29 1980-08-29 Photomask

Country Status (1)

Country Link
JP (1) JPS5744150A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112509A2 (en) * 1982-12-11 1984-07-04 EUROSIL electronic GmbH Optical heat-insensitive mask for X-ray lithography, and manufacturing process thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112509A2 (en) * 1982-12-11 1984-07-04 EUROSIL electronic GmbH Optical heat-insensitive mask for X-ray lithography, and manufacturing process thereof
EP0112509A3 (en) * 1982-12-11 1985-06-12 EUROSIL electronic GmbH Optical heat-insensitive mask for x-ray lithography, and manufacturing process thereof

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