JPS5596952A - Production of photomask - Google Patents

Production of photomask

Info

Publication number
JPS5596952A
JPS5596952A JP524879A JP524879A JPS5596952A JP S5596952 A JPS5596952 A JP S5596952A JP 524879 A JP524879 A JP 524879A JP 524879 A JP524879 A JP 524879A JP S5596952 A JPS5596952 A JP S5596952A
Authority
JP
Japan
Prior art keywords
mask
layer
resist layer
photochromic
positive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP524879A
Other languages
Japanese (ja)
Other versions
JPS6148704B2 (en
Inventor
Akira Morishige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP524879A priority Critical patent/JPS5596952A/en
Publication of JPS5596952A publication Critical patent/JPS5596952A/en
Publication of JPS6148704B2 publication Critical patent/JPS6148704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To produce negative type and positive type masks freely, by using selected processes, with respect to specified copy mask master plate possessing photochromic layer. CONSTITUTION:A metal layer 3, a positive type resist layer 4, and a photochromic layer 5 are laminated on a substrate 2 to form a mask master plate 1. In production of negative type mask, a light including the coloring sensitive wavelength region of photochromic layer 5 is radiated through a master mask 6 overlaid on the master plate 1 to obtin a colored photochromic layer 5', which is fixed. Using the layer 5' as mask, resist layer 4 is subjected to secondary exposure and developed to obtain a resist layer 4', which is used as the mask to etch the metal layer 3, so that a negative type mask consisting of desired metal layer 3' may be obtained (drawing A). In production of positive type mask, the resist layer 4 is exposed with a light not containing the coloring sensitive wavelength region of the photochromic layer 5 through the master mask 6, and developed, and using the obtained resist layer 4', a positive type mask is obtained by performing in similar processes as in the case above (drawing B).
JP524879A 1979-01-19 1979-01-19 Production of photomask Granted JPS5596952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP524879A JPS5596952A (en) 1979-01-19 1979-01-19 Production of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP524879A JPS5596952A (en) 1979-01-19 1979-01-19 Production of photomask

Publications (2)

Publication Number Publication Date
JPS5596952A true JPS5596952A (en) 1980-07-23
JPS6148704B2 JPS6148704B2 (en) 1986-10-25

Family

ID=11605896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP524879A Granted JPS5596952A (en) 1979-01-19 1979-01-19 Production of photomask

Country Status (1)

Country Link
JP (1) JPS5596952A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189640A (en) * 1985-02-18 1986-08-23 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Manufacture of semiconductor device
JPS62266541A (en) * 1986-04-29 1987-11-19 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device
JPH02101464A (en) * 1988-10-11 1990-04-13 Matsushita Electric Ind Co Ltd Pattern forming method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342883Y2 (en) * 1987-01-31 1991-09-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189640A (en) * 1985-02-18 1986-08-23 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Manufacture of semiconductor device
JPS62266541A (en) * 1986-04-29 1987-11-19 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device
JPH02101464A (en) * 1988-10-11 1990-04-13 Matsushita Electric Ind Co Ltd Pattern forming method

Also Published As

Publication number Publication date
JPS6148704B2 (en) 1986-10-25

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