JPS53136969A - Photomask - Google Patents

Photomask

Info

Publication number
JPS53136969A
JPS53136969A JP5141477A JP5141477A JPS53136969A JP S53136969 A JPS53136969 A JP S53136969A JP 5141477 A JP5141477 A JP 5141477A JP 5141477 A JP5141477 A JP 5141477A JP S53136969 A JPS53136969 A JP S53136969A
Authority
JP
Japan
Prior art keywords
photomask
convexity
overexposure
concavity
drill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5141477A
Other languages
Japanese (ja)
Other versions
JPS607381B2 (en
Inventor
Shuji Kondo
Kazuhiko Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52051414A priority Critical patent/JPS607381B2/en
Publication of JPS53136969A publication Critical patent/JPS53136969A/en
Publication of JPS607381B2 publication Critical patent/JPS607381B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To obtain a photomask which can drill the aperture in a high conformity with the mask pattern with no overexposure at the convexity even if a proper exposure is given to the concavity, by providing the transmission amount regulation thin film at the position corresponding to the prescribed region at the convexity area of the photo resist.
COPYRIGHT: (C)1978,JPO&Japio
JP52051414A 1977-05-04 1977-05-04 Photomask pattern formation method Expired JPS607381B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52051414A JPS607381B2 (en) 1977-05-04 1977-05-04 Photomask pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52051414A JPS607381B2 (en) 1977-05-04 1977-05-04 Photomask pattern formation method

Publications (2)

Publication Number Publication Date
JPS53136969A true JPS53136969A (en) 1978-11-29
JPS607381B2 JPS607381B2 (en) 1985-02-23

Family

ID=12886258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52051414A Expired JPS607381B2 (en) 1977-05-04 1977-05-04 Photomask pattern formation method

Country Status (1)

Country Link
JP (1) JPS607381B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005257712A (en) * 2004-03-09 2005-09-22 Hoya Corp Gray tone mask and its manufacturing method
JP2008116517A (en) * 2006-11-01 2008-05-22 Sk Electronics:Kk Halftone photomask and method for manufacturing same
JP2009037254A (en) * 2008-10-06 2009-02-19 Hoya Corp Method for manufacturing gray tone mask and method for manufacturing material to be processed

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005257712A (en) * 2004-03-09 2005-09-22 Hoya Corp Gray tone mask and its manufacturing method
JP4521694B2 (en) * 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 Gray-tone mask and thin film transistor manufacturing method
JP2008116517A (en) * 2006-11-01 2008-05-22 Sk Electronics:Kk Halftone photomask and method for manufacturing same
JP2009037254A (en) * 2008-10-06 2009-02-19 Hoya Corp Method for manufacturing gray tone mask and method for manufacturing material to be processed

Also Published As

Publication number Publication date
JPS607381B2 (en) 1985-02-23

Similar Documents

Publication Publication Date Title
JPS5428131A (en) Control method for light amount of exposure for photographic printing
JPS5339075A (en) Step and repeat exposure method of masks
JPS53136969A (en) Photomask
JPS57106128A (en) Forming method for pattern
JPS542668A (en) Manufacture of semiconductor device
JPS5347825A (en) Photoresist exposure
JPS5361280A (en) Pattern projector
JPS5687031A (en) Photographic printing method and original plate for printing used in execution of this method
JPS5429976A (en) Manufacture of semiconductor device
JPS5389673A (en) Fine pattern forming method of semiconductor device
JPS5431282A (en) Pattern formation method
JPS54141573A (en) Mask for exposure
JPS53117385A (en) Exposure mask for patterning
JPS5318964A (en) X-ray projection and exposure system
JPS52156569A (en) Production of optical mask
JPS5314570A (en) Production of photo mask
JPS5399772A (en) Optical mask
JPS5357973A (en) Preparation of photo mask
JPS5431281A (en) Optical exposure mask
JPS5360177A (en) Photo mask
JPS5413334A (en) Exposure
JPS5255867A (en) Exposure method
JPS53145477A (en) Electron beam exposure method
JPS5336456A (en) Exposure correction lens
JPS53136965A (en) Pattern formation method for manufacture of electron beam mask