JPS5492061A - Micropattern forming method - Google Patents

Micropattern forming method

Info

Publication number
JPS5492061A
JPS5492061A JP15816877A JP15816877A JPS5492061A JP S5492061 A JPS5492061 A JP S5492061A JP 15816877 A JP15816877 A JP 15816877A JP 15816877 A JP15816877 A JP 15816877A JP S5492061 A JPS5492061 A JP S5492061A
Authority
JP
Japan
Prior art keywords
layer
film
pattern
mask
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15816877A
Other languages
Japanese (ja)
Inventor
Yushi Inagaki
Fumio Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15816877A priority Critical patent/JPS5492061A/en
Publication of JPS5492061A publication Critical patent/JPS5492061A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To secure the ideal adhesion between the resist and the mask in order to form a micropattern to the processed layer by giving the adhesive evaporation of the metal light sheilding layer directly on the photo resist and then obtaining the mask for photo resist patterning by patterning the evaporated light shielding layer.
CONSTITUTION: Photo resist film 6 is coated on processed layer 5 on base 4, and metal light shielding layer 7 of Cr, Al, Au and the like is evaporated directly on film 6. Then highly sensitive electron resist film 8 is coated on the entire surface, and the exposure is given after the scribing exposure via the X-rays, the electron beams and others to form pattern 8'. After this, layer 7 is etched with pattern 8' used as the mask, and minute metal pattern 7' remains under pattern 8'. The exposure and development are given again to exposed film 6, and processed layer 5 is exposed with film 6' remaining. Then layer 5 is etched using the mask of the laminated layer film formed with patterns 8', 7' and 6', and the laminated film is removed to obtain desired pattern 5'.
COPYRIGHT: (C)1979,JPO&Japio
JP15816877A 1977-12-29 1977-12-29 Micropattern forming method Pending JPS5492061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15816877A JPS5492061A (en) 1977-12-29 1977-12-29 Micropattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15816877A JPS5492061A (en) 1977-12-29 1977-12-29 Micropattern forming method

Publications (1)

Publication Number Publication Date
JPS5492061A true JPS5492061A (en) 1979-07-20

Family

ID=15665751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15816877A Pending JPS5492061A (en) 1977-12-29 1977-12-29 Micropattern forming method

Country Status (1)

Country Link
JP (1) JPS5492061A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5672847U (en) * 1979-11-09 1981-06-15
JPS5679428A (en) * 1979-12-03 1981-06-30 Hitachi Ltd Working of ultra-fine article
JPS5694351A (en) * 1979-12-26 1981-07-30 Perkin Elmer Corp Mask for xxray lithograph and production thereof
JPS58135643U (en) * 1982-03-05 1983-09-12 松下電工株式会社 Solar water heater water heater structure
JPS613489A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Manufacture of semiconductor device
JPS61139792U (en) * 1984-10-17 1986-08-29
US20160238937A1 (en) * 2013-09-26 2016-08-18 National Institute For Materials Science High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5672847U (en) * 1979-11-09 1981-06-15
JPS5679428A (en) * 1979-12-03 1981-06-30 Hitachi Ltd Working of ultra-fine article
JPS5694351A (en) * 1979-12-26 1981-07-30 Perkin Elmer Corp Mask for xxray lithograph and production thereof
JPH0142134B2 (en) * 1979-12-26 1989-09-11 Perkin Elmer Corp
JPS58135643U (en) * 1982-03-05 1983-09-12 松下電工株式会社 Solar water heater water heater structure
JPS613489A (en) * 1984-06-18 1986-01-09 Fujitsu Ltd Manufacture of semiconductor device
JPS61139792U (en) * 1984-10-17 1986-08-29
US20160238937A1 (en) * 2013-09-26 2016-08-18 National Institute For Materials Science High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film
JPWO2015046327A1 (en) * 2013-09-26 2017-03-09 国立研究開発法人物質・材料研究機構 High-sensitivity laminated resist film and method for improving sensitivity of resist film
US9703197B2 (en) * 2013-09-26 2017-07-11 National Institute For Materials Science High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film

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