JPS5443681A - Electron beam light-exposing method - Google Patents
Electron beam light-exposing methodInfo
- Publication number
- JPS5443681A JPS5443681A JP11067477A JP11067477A JPS5443681A JP S5443681 A JPS5443681 A JP S5443681A JP 11067477 A JP11067477 A JP 11067477A JP 11067477 A JP11067477 A JP 11067477A JP S5443681 A JPS5443681 A JP S5443681A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electron beam
- light
- resistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
Abstract
PURPOSE: To obtain a light-exposing pattern having no defects with discharging electron accumulated on a resistor film by causing a conductive thin film to adhere to onto the electron beam resistor film, where a desired pattern is to be formed, and light-exposing the resistor film by using the electron beam which passes through this thin film.
CONSTITUTION: Metallic thin film 2 consisting of Cr, etc., is evaporated onto glass substrate 1 for a metallic mask, and resistor film 3 for electron beam is caused to adhere onto film 2. Next, though electron beam 4 is irradiated to film 3, carbon thin film 5 is beforehand formed on film 3 before this irradiation, and electron beam 4 which passes through film 5 is used to light-expose. Thus, electron accumulated on resistor film 3 is discharged through carbon thin film 5, and distortion is not generated in the light-exposing pattern of film 3. After that, though film 5 is removed, this film can be exfoliated easily by methyl isobutyl ketone which is developing liquid of film 3, so that no other means is required.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11067477A JPS5443681A (en) | 1977-09-13 | 1977-09-13 | Electron beam light-exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11067477A JPS5443681A (en) | 1977-09-13 | 1977-09-13 | Electron beam light-exposing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5443681A true JPS5443681A (en) | 1979-04-06 |
Family
ID=14541571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11067477A Pending JPS5443681A (en) | 1977-09-13 | 1977-09-13 | Electron beam light-exposing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443681A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162004A (en) * | 1979-06-06 | 1980-12-17 | Toshiba Corp | Electric charge corpuscular ray irradiation unit |
JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
EP0604054A1 (en) * | 1992-12-23 | 1994-06-29 | AT&T Corp. | Electron beam lithography with reduced charging effects |
JPH07169675A (en) * | 1993-12-16 | 1995-07-04 | Natl Res Inst For Metals | Substrate material for electron beam lithography |
-
1977
- 1977-09-13 JP JP11067477A patent/JPS5443681A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162004A (en) * | 1979-06-06 | 1980-12-17 | Toshiba Corp | Electric charge corpuscular ray irradiation unit |
JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
US5019485A (en) * | 1988-10-13 | 1991-05-28 | Fujitsu Limited | Process of using an electrically conductive layer-providing composition for formation of resist patterns |
EP0604054A1 (en) * | 1992-12-23 | 1994-06-29 | AT&T Corp. | Electron beam lithography with reduced charging effects |
JPH07176470A (en) * | 1992-12-23 | 1995-07-14 | At & T Corp | Patterning method for semiconductor element |
JPH07169675A (en) * | 1993-12-16 | 1995-07-04 | Natl Res Inst For Metals | Substrate material for electron beam lithography |
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