JPS5443681A - Electron beam light-exposing method - Google Patents

Electron beam light-exposing method

Info

Publication number
JPS5443681A
JPS5443681A JP11067477A JP11067477A JPS5443681A JP S5443681 A JPS5443681 A JP S5443681A JP 11067477 A JP11067477 A JP 11067477A JP 11067477 A JP11067477 A JP 11067477A JP S5443681 A JPS5443681 A JP S5443681A
Authority
JP
Japan
Prior art keywords
film
electron beam
light
resistor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11067477A
Other languages
Japanese (ja)
Inventor
Takaaki Katou
Tadao Kato
Hidefumi Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11067477A priority Critical patent/JPS5443681A/en
Publication of JPS5443681A publication Critical patent/JPS5443681A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a light-exposing pattern having no defects with discharging electron accumulated on a resistor film by causing a conductive thin film to adhere to onto the electron beam resistor film, where a desired pattern is to be formed, and light-exposing the resistor film by using the electron beam which passes through this thin film.
CONSTITUTION: Metallic thin film 2 consisting of Cr, etc., is evaporated onto glass substrate 1 for a metallic mask, and resistor film 3 for electron beam is caused to adhere onto film 2. Next, though electron beam 4 is irradiated to film 3, carbon thin film 5 is beforehand formed on film 3 before this irradiation, and electron beam 4 which passes through film 5 is used to light-expose. Thus, electron accumulated on resistor film 3 is discharged through carbon thin film 5, and distortion is not generated in the light-exposing pattern of film 3. After that, though film 5 is removed, this film can be exfoliated easily by methyl isobutyl ketone which is developing liquid of film 3, so that no other means is required.
COPYRIGHT: (C)1979,JPO&Japio
JP11067477A 1977-09-13 1977-09-13 Electron beam light-exposing method Pending JPS5443681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11067477A JPS5443681A (en) 1977-09-13 1977-09-13 Electron beam light-exposing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11067477A JPS5443681A (en) 1977-09-13 1977-09-13 Electron beam light-exposing method

Publications (1)

Publication Number Publication Date
JPS5443681A true JPS5443681A (en) 1979-04-06

Family

ID=14541571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11067477A Pending JPS5443681A (en) 1977-09-13 1977-09-13 Electron beam light-exposing method

Country Status (1)

Country Link
JP (1) JPS5443681A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162004A (en) * 1979-06-06 1980-12-17 Toshiba Corp Electric charge corpuscular ray irradiation unit
JPS6074521A (en) * 1983-09-30 1985-04-26 Toshiba Corp Pattern forming process
US5019485A (en) * 1988-10-13 1991-05-28 Fujitsu Limited Process of using an electrically conductive layer-providing composition for formation of resist patterns
EP0604054A1 (en) * 1992-12-23 1994-06-29 AT&T Corp. Electron beam lithography with reduced charging effects
JPH07169675A (en) * 1993-12-16 1995-07-04 Natl Res Inst For Metals Substrate material for electron beam lithography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162004A (en) * 1979-06-06 1980-12-17 Toshiba Corp Electric charge corpuscular ray irradiation unit
JPS6074521A (en) * 1983-09-30 1985-04-26 Toshiba Corp Pattern forming process
US5019485A (en) * 1988-10-13 1991-05-28 Fujitsu Limited Process of using an electrically conductive layer-providing composition for formation of resist patterns
EP0604054A1 (en) * 1992-12-23 1994-06-29 AT&T Corp. Electron beam lithography with reduced charging effects
JPH07176470A (en) * 1992-12-23 1995-07-14 At & T Corp Patterning method for semiconductor element
JPH07169675A (en) * 1993-12-16 1995-07-04 Natl Res Inst For Metals Substrate material for electron beam lithography

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