JPS55158635A - Mask - Google Patents

Mask

Info

Publication number
JPS55158635A
JPS55158635A JP6618979A JP6618979A JPS55158635A JP S55158635 A JPS55158635 A JP S55158635A JP 6618979 A JP6618979 A JP 6618979A JP 6618979 A JP6618979 A JP 6618979A JP S55158635 A JPS55158635 A JP S55158635A
Authority
JP
Japan
Prior art keywords
film
pattern
mask
electron beams
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6618979A
Other languages
Japanese (ja)
Inventor
Fumio Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6618979A priority Critical patent/JPS55158635A/en
Publication of JPS55158635A publication Critical patent/JPS55158635A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Abstract

PURPOSE:To obtain a mask with a minute pattern by a method wherein a monocrystal grown on a transparent substrate is used as a light shielding film mounted onto the substrate when electron beams are selectively irradiated onto the light shielding film, while its one portion is removed and the mask is formed. CONSTITUTION:A thin Si monocrystal layer 7 with approximate 0.5-2.0mum thickness is grown on a transparent substrate 6, such as sapphire, etc. in a gaseous phase shape, and a negative type resist-film 8 is applied on the whole surface. Electron beams 9 are irradiated drawing a pattern on a region where the pattern is to be formed, polymer bridges are generated to the film 8, and the necessary pattern is formed. The film 8 is developed, the film is used as a mask, an exposing portion of the layer 7 is removed by means of etching by employing fluoric acid, etc. the film 8 is removed, and a mask 10 with the desired pattern is formed. Thus, the number of electrons dispersion to the rear from the layer 7 when irradiating the electron beams 9 may be few, and the minute pattern can be prepared.
JP6618979A 1979-05-30 1979-05-30 Mask Pending JPS55158635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6618979A JPS55158635A (en) 1979-05-30 1979-05-30 Mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6618979A JPS55158635A (en) 1979-05-30 1979-05-30 Mask

Publications (1)

Publication Number Publication Date
JPS55158635A true JPS55158635A (en) 1980-12-10

Family

ID=13308641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6618979A Pending JPS55158635A (en) 1979-05-30 1979-05-30 Mask

Country Status (1)

Country Link
JP (1) JPS55158635A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask
EP0660183A2 (en) * 1993-12-09 1995-06-28 Ryoden Semiconductor System Engineering Corporation Mask for transferring a pattern for use in a semiconductor device and method for manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask
EP0660183A2 (en) * 1993-12-09 1995-06-28 Ryoden Semiconductor System Engineering Corporation Mask for transferring a pattern for use in a semiconductor device and method for manufacturing the same
EP0660183A3 (en) * 1993-12-09 1997-01-02 Ryoden Semiconductor Syst Eng Mask for transferring a pattern for use in a semiconductor device and method for manufacturing the same.
US5622787A (en) * 1993-12-09 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
US5702849A (en) * 1993-12-09 1997-12-30 Mitsubishi Denki Kabushiki Kaisha Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
EP0020776A4 (en) Method of forming patterns.
DE3784541T2 (en) Process for producing a deposited layer.
JPS55158635A (en) Mask
JPS52119172A (en) Forming method of fine pattern
JPS5492061A (en) Micropattern forming method
JPS5528077A (en) Production of mask
JPS5652751A (en) Photomask correcting method
JPS5461478A (en) Chromium plate
JPS5443681A (en) Electron beam light-exposing method
JPS5679428A (en) Working of ultra-fine article
JPS57198632A (en) Fine pattern formation
JPS55128832A (en) Method of making minute pattern
JPS5792830A (en) Manufacture of mask for x-ray exposure
JPS53110379A (en) Optical filter and its manufacture
JPS5742043A (en) Photosensitive material
JPS56115534A (en) Formation of pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS56144536A (en) Pattern formation and p-n junction formation
JPS5748731A (en) Manufacture of mask
JPS56107241A (en) Dry etching method
JPS5496371A (en) Mask forming method
JPS5619053A (en) Manufacture of photomask
JPS56107554A (en) Formation of pattern
JPS55144247A (en) Preparation of photomask
JPS56107245A (en) Manufacture of photomask