JPS56107241A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS56107241A
JPS56107241A JP1052080A JP1052080A JPS56107241A JP S56107241 A JPS56107241 A JP S56107241A JP 1052080 A JP1052080 A JP 1052080A JP 1052080 A JP1052080 A JP 1052080A JP S56107241 A JPS56107241 A JP S56107241A
Authority
JP
Japan
Prior art keywords
layer
mask
inorg
electron beam
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1052080A
Other languages
Japanese (ja)
Other versions
JPH0149937B2 (en
Inventor
Tatsuya Ikeuchi
Tomihiro Nakada
Hachiro Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP1052080A priority Critical patent/JPS56107241A/en
Publication of JPS56107241A publication Critical patent/JPS56107241A/en
Publication of JPH0149937B2 publication Critical patent/JPH0149937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form a mask with superior dry etching resistance by patternwise irradiating an inorg. resist based on silicon and silicon oxide with electron beams and etching the unirradiated part. CONSTITUTION:Electron beam sensitive thin film layer 3 based on a mixture of silicon and silicon oxide is formed on a hard mask blank plate having inorg. light shielding film layer 2 on transparent glass substrate 1, and layer 3 is patterned to obtain a mask. The patterning can be carried out by a photolithographic method, yet since layer 3 has electron beam sensitivity and an electron beam irradiated part is made difficultly soluble in chemicals such as acid as compared to an unirradiated part, it is desirable to patternwise irradiate layer 3 directly with electron beams 4. By dipping irradiated substrate 1 in a chemical soln., the unirradiated part is chemically dissolved and removed to form mask 5, and the exposed part of layer 2 is dry etched to form patterned inorg. light shielding film layer 6.
JP1052080A 1980-01-31 1980-01-31 Dry etching method Granted JPS56107241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1052080A JPS56107241A (en) 1980-01-31 1980-01-31 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1052080A JPS56107241A (en) 1980-01-31 1980-01-31 Dry etching method

Publications (2)

Publication Number Publication Date
JPS56107241A true JPS56107241A (en) 1981-08-26
JPH0149937B2 JPH0149937B2 (en) 1989-10-26

Family

ID=11752503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1052080A Granted JPS56107241A (en) 1980-01-31 1980-01-31 Dry etching method

Country Status (1)

Country Link
JP (1) JPS56107241A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589593A1 (en) * 1985-08-09 1987-05-07 Pichot Michel Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8692997B2 (en) 2010-08-25 2014-04-08 Bah Holdings Llc Optical gas and/or particulate sensors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923738A (en) * 1972-06-30 1974-03-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923738A (en) * 1972-06-30 1974-03-02

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589593A1 (en) * 1985-08-09 1987-05-07 Pichot Michel Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask

Also Published As

Publication number Publication date
JPH0149937B2 (en) 1989-10-26

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