JPS56107243A - Developing method for inorganic resist - Google Patents

Developing method for inorganic resist

Info

Publication number
JPS56107243A
JPS56107243A JP1051880A JP1051880A JPS56107243A JP S56107243 A JPS56107243 A JP S56107243A JP 1051880 A JP1051880 A JP 1051880A JP 1051880 A JP1051880 A JP 1051880A JP S56107243 A JPS56107243 A JP S56107243A
Authority
JP
Japan
Prior art keywords
thin film
silicon
inorg
resist
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1051880A
Other languages
Japanese (ja)
Other versions
JPS649616B2 (en
Inventor
Tatsuya Ikeuchi
Tomihiro Nakada
Hachiro Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP1051880A priority Critical patent/JPS56107243A/en
Publication of JPS56107243A publication Critical patent/JPS56107243A/en
Publication of JPS649616B2 publication Critical patent/JPS649616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To obtain a negative resist pattern with high working accuracy by irradiating an electron beam sensitive inorg. resist consisting of silicon and silicon oxide with electron beams followed by development by a dry etching method. CONSTITUTION:Chromium thin film layer 2 and electron beam sensitive inorg. resist thin film 3 of 0.05-1mum thickness based on a mixture of silicon and silicon oxide are formed on transparent substrate 1 of glass or the like. Thin film 3 is patternwise irradiated with electron beams 4 and developed by a dry etching method using a gas contg. one or more kinds of carbon halides or the halides and oxygen. Thus, the whole process can be carried out in the absence of dust, and a semiconductor, IC, LSI, etc. of high reliability are obtd.
JP1051880A 1980-01-31 1980-01-31 Developing method for inorganic resist Granted JPS56107243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1051880A JPS56107243A (en) 1980-01-31 1980-01-31 Developing method for inorganic resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1051880A JPS56107243A (en) 1980-01-31 1980-01-31 Developing method for inorganic resist

Publications (2)

Publication Number Publication Date
JPS56107243A true JPS56107243A (en) 1981-08-26
JPS649616B2 JPS649616B2 (en) 1989-02-17

Family

ID=11752442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1051880A Granted JPS56107243A (en) 1980-01-31 1980-01-31 Developing method for inorganic resist

Country Status (1)

Country Link
JP (1) JPS56107243A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195940A (en) * 1984-03-17 1985-10-04 Mitsubishi Electric Corp Forming method for fine pattern
WO2024024373A1 (en) * 2022-07-29 2024-02-01 東京エレクトロン株式会社 Method for processing substrate, and system for processing substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195940A (en) * 1984-03-17 1985-10-04 Mitsubishi Electric Corp Forming method for fine pattern
WO2024024373A1 (en) * 2022-07-29 2024-02-01 東京エレクトロン株式会社 Method for processing substrate, and system for processing substrate

Also Published As

Publication number Publication date
JPS649616B2 (en) 1989-02-17

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