JPS5496371A - Mask forming method - Google Patents
Mask forming methodInfo
- Publication number
- JPS5496371A JPS5496371A JP313178A JP313178A JPS5496371A JP S5496371 A JPS5496371 A JP S5496371A JP 313178 A JP313178 A JP 313178A JP 313178 A JP313178 A JP 313178A JP S5496371 A JPS5496371 A JP S5496371A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reaction
- resist
- region
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To omit the development process by coating the resist film to the photo mask material of Cr or the like, irradiating the electron beam to secure the reaction and giving the selective etching with the gas plasma.
CONSTITUTION: Cr4 and Cr2O35 are coated on glass plate 1 and then resist 3 is stacked on them. The scribing is given with electron beam BM and via thin film 3 secure the reaction between film 3 and 5. The reaction speed has relation with both the current density and the scribing speed. Then the entire surface of film 3 is removed with the O2 plasma, and furthermore reaction region 5a and Cr film 4 are etched through the beam irradiation. Thus, Cr film region 4a touching region 5a is removed selectively, omitting the development process. The etching effect differs according to the types of the resist and the material of photo mask material 5, and the etching speed varies greatly by the O2 density of the chromium oxide and existence of other impurities (such as W, Mo, etc.).
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53003131A JPS5910056B2 (en) | 1978-01-13 | 1978-01-13 | Mask making method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53003131A JPS5910056B2 (en) | 1978-01-13 | 1978-01-13 | Mask making method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5496371A true JPS5496371A (en) | 1979-07-30 |
JPS5910056B2 JPS5910056B2 (en) | 1984-03-06 |
Family
ID=11548792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53003131A Expired JPS5910056B2 (en) | 1978-01-13 | 1978-01-13 | Mask making method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5910056B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60239026A (en) * | 1984-05-10 | 1985-11-27 | Mitsubishi Electric Corp | Formation of pattern according to dry etching |
JPS6276522A (en) * | 1985-09-27 | 1987-04-08 | Nec Corp | Etching method |
-
1978
- 1978-01-13 JP JP53003131A patent/JPS5910056B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60239026A (en) * | 1984-05-10 | 1985-11-27 | Mitsubishi Electric Corp | Formation of pattern according to dry etching |
JPS6276522A (en) * | 1985-09-27 | 1987-04-08 | Nec Corp | Etching method |
Also Published As
Publication number | Publication date |
---|---|
JPS5910056B2 (en) | 1984-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0020776A4 (en) | Method of forming patterns. | |
JPS57168246A (en) | Formation of negative pattern | |
JPS5496371A (en) | Mask forming method | |
JPS5432143A (en) | Etching process | |
JPS52119172A (en) | Forming method of fine pattern | |
JPS57160127A (en) | Manufacture of transcribe mask for x-ray exposure | |
JPS5461478A (en) | Chromium plate | |
JPS5718324A (en) | Method of working | |
JPS564238A (en) | Forming of pattern | |
JPS56105637A (en) | Formation of pattern | |
JPS5666038A (en) | Formation of micro-pattern | |
JPS61204933A (en) | Manufacture of semiconductor device | |
JPS56115534A (en) | Formation of pattern | |
JPS57173943A (en) | Manufacture of photo mask | |
JPS55158635A (en) | Mask | |
JPS57112025A (en) | Formation of pattern | |
JPS5710930A (en) | Dry development method | |
JPS5588052A (en) | Developing method for negative type resist | |
JPS55144247A (en) | Preparation of photomask | |
JPS56158334A (en) | Manufacture of hard mask | |
JPS5568634A (en) | Manufacture of mask for x-ray exposure | |
JPS5718113A (en) | Manufacture of elastic surface wave lattice type transducer | |
JPS5745234A (en) | Method for formation of microscopic pattern | |
JPS5673435A (en) | Manufacture of semiconductor device | |
JPS5740933A (en) | Lift off method |