JPS5496371A - Mask forming method - Google Patents

Mask forming method

Info

Publication number
JPS5496371A
JPS5496371A JP313178A JP313178A JPS5496371A JP S5496371 A JPS5496371 A JP S5496371A JP 313178 A JP313178 A JP 313178A JP 313178 A JP313178 A JP 313178A JP S5496371 A JPS5496371 A JP S5496371A
Authority
JP
Japan
Prior art keywords
film
reaction
resist
region
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP313178A
Other languages
Japanese (ja)
Other versions
JPS5910056B2 (en
Inventor
Hidefumi Nakada
Yaichiro Watakabe
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53003131A priority Critical patent/JPS5910056B2/en
Publication of JPS5496371A publication Critical patent/JPS5496371A/en
Publication of JPS5910056B2 publication Critical patent/JPS5910056B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To omit the development process by coating the resist film to the photo mask material of Cr or the like, irradiating the electron beam to secure the reaction and giving the selective etching with the gas plasma.
CONSTITUTION: Cr4 and Cr2O35 are coated on glass plate 1 and then resist 3 is stacked on them. The scribing is given with electron beam BM and via thin film 3 secure the reaction between film 3 and 5. The reaction speed has relation with both the current density and the scribing speed. Then the entire surface of film 3 is removed with the O2 plasma, and furthermore reaction region 5a and Cr film 4 are etched through the beam irradiation. Thus, Cr film region 4a touching region 5a is removed selectively, omitting the development process. The etching effect differs according to the types of the resist and the material of photo mask material 5, and the etching speed varies greatly by the O2 density of the chromium oxide and existence of other impurities (such as W, Mo, etc.).
COPYRIGHT: (C)1979,JPO&Japio
JP53003131A 1978-01-13 1978-01-13 Mask making method Expired JPS5910056B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53003131A JPS5910056B2 (en) 1978-01-13 1978-01-13 Mask making method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53003131A JPS5910056B2 (en) 1978-01-13 1978-01-13 Mask making method

Publications (2)

Publication Number Publication Date
JPS5496371A true JPS5496371A (en) 1979-07-30
JPS5910056B2 JPS5910056B2 (en) 1984-03-06

Family

ID=11548792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53003131A Expired JPS5910056B2 (en) 1978-01-13 1978-01-13 Mask making method

Country Status (1)

Country Link
JP (1) JPS5910056B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239026A (en) * 1984-05-10 1985-11-27 Mitsubishi Electric Corp Formation of pattern according to dry etching
JPS6276522A (en) * 1985-09-27 1987-04-08 Nec Corp Etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239026A (en) * 1984-05-10 1985-11-27 Mitsubishi Electric Corp Formation of pattern according to dry etching
JPS6276522A (en) * 1985-09-27 1987-04-08 Nec Corp Etching method

Also Published As

Publication number Publication date
JPS5910056B2 (en) 1984-03-06

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