JPS564238A - Forming of pattern - Google Patents

Forming of pattern

Info

Publication number
JPS564238A
JPS564238A JP7927279A JP7927279A JPS564238A JP S564238 A JPS564238 A JP S564238A JP 7927279 A JP7927279 A JP 7927279A JP 7927279 A JP7927279 A JP 7927279A JP S564238 A JPS564238 A JP S564238A
Authority
JP
Japan
Prior art keywords
film
etched
thin
resist
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7927279A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Takaaki Katou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7927279A priority Critical patent/JPS564238A/en
Publication of JPS564238A publication Critical patent/JPS564238A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a thin film to be etched from being contaminated by external substances and improve etching resistance property remarkably by interposing the thin film to be etched between etching-resistive thin films. CONSTITUTION:An electron beam resist 7, a thin Ti film 6 and a resist 2 are overlapped with a thin film to be etched 3 of Nb or the like on an Si substrate 4. Exposure to light is performed to pattern the resist. After the Ti film 6 is etched by ions, the electron beam resist 7 and the Nb film 3 are etched by an Ar ion beam. The Ti film 6 shows high etching resistance to an Ar ion beam of 1keV and 1mA/ cm<2>, for example, so that a fine pattern can be made in the Nb film 3. According to this method, a fine pattern can be made in a thin metal layer, an SiO2 film or an Si3N4 film by ion etching and these thin films do not suffer from thermal strain and contamination from other places or substances.
JP7927279A 1979-06-23 1979-06-23 Forming of pattern Pending JPS564238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7927279A JPS564238A (en) 1979-06-23 1979-06-23 Forming of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7927279A JPS564238A (en) 1979-06-23 1979-06-23 Forming of pattern

Publications (1)

Publication Number Publication Date
JPS564238A true JPS564238A (en) 1981-01-17

Family

ID=13685220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7927279A Pending JPS564238A (en) 1979-06-23 1979-06-23 Forming of pattern

Country Status (1)

Country Link
JP (1) JPS564238A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191034A (en) * 1985-02-20 1986-08-25 Fujitsu Ltd Formation of metallic pattern
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask
JPS63202396A (en) * 1987-02-18 1988-08-22 Ezaki Glyco Kk Production of oligosaccharides having n-acetylglucosamine, glucosamine, mannose or allose at terminal
US4792534A (en) * 1985-12-25 1988-12-20 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device involving sidewall spacer formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191034A (en) * 1985-02-20 1986-08-25 Fujitsu Ltd Formation of metallic pattern
US4792534A (en) * 1985-12-25 1988-12-20 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device involving sidewall spacer formation
JPS63166231A (en) * 1986-12-27 1988-07-09 Hoya Corp Manufacture of photo mask
JPS63202396A (en) * 1987-02-18 1988-08-22 Ezaki Glyco Kk Production of oligosaccharides having n-acetylglucosamine, glucosamine, mannose or allose at terminal
JPH062072B2 (en) * 1987-02-18 1994-01-12 江崎グリコ株式会社 Process for producing oligosaccharides containing N-acetylglucosamine, glucosamine, mannose or allose at the end

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