JPS57207338A - Method for treating resist film for electron beam - Google Patents

Method for treating resist film for electron beam

Info

Publication number
JPS57207338A
JPS57207338A JP9340181A JP9340181A JPS57207338A JP S57207338 A JPS57207338 A JP S57207338A JP 9340181 A JP9340181 A JP 9340181A JP 9340181 A JP9340181 A JP 9340181A JP S57207338 A JPS57207338 A JP S57207338A
Authority
JP
Japan
Prior art keywords
resist film
substrate
electron beam
sensitivity
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9340181A
Other languages
Japanese (ja)
Inventor
Shigeru Furuya
Yasuhide Machida
Noriaki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9340181A priority Critical patent/JPS57207338A/en
Publication of JPS57207338A publication Critical patent/JPS57207338A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the spread of the resist film after development, by using the same resist material, changing the heat treating temperature after application, and lowering the sensitivity of the layer which is closest to a substrate. CONSTITUTION:The negative type resist film 3 having the width of 4,000Angstrom is formed on the substrate 1, and the heat treatment is performed at 100 deg.C for 20min (sensitivity 2X10<-8>C/cm<2>). Then the same material is deposited 4 to the thickness of 6,000Angstrom , and the heat treatment is performed at 100 deg.C for 20min (sensitivity 1.5X10<-8>C/cm<2>). When exposure is performed by the electron beam whose irradiating amount is 1.5X10<-5>C/cm<2>, the exposure of the resist film 3 in the vicinity of the substrate 1 becomes insufficient with respect to the reflected electrons from the substrate, the spread of the resist width is suppressed, and the mask of the resist film, which is close to the width of the incident electron beam flux, is completed. Said treatment is very effective for the high integration of a semiconductor device.
JP9340181A 1981-06-16 1981-06-16 Method for treating resist film for electron beam Pending JPS57207338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9340181A JPS57207338A (en) 1981-06-16 1981-06-16 Method for treating resist film for electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9340181A JPS57207338A (en) 1981-06-16 1981-06-16 Method for treating resist film for electron beam

Publications (1)

Publication Number Publication Date
JPS57207338A true JPS57207338A (en) 1982-12-20

Family

ID=14081270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9340181A Pending JPS57207338A (en) 1981-06-16 1981-06-16 Method for treating resist film for electron beam

Country Status (1)

Country Link
JP (1) JPS57207338A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150015A (en) * 1988-12-01 1990-06-08 Fujitsu Ltd Pattern forming
US7038204B2 (en) 2004-05-26 2006-05-02 International Business Machines Corporation Method for reducing proximity effects in electron beam lithography
US7545603B2 (en) 2004-04-30 2009-06-09 Tdk Corporation Magnetic head and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150015A (en) * 1988-12-01 1990-06-08 Fujitsu Ltd Pattern forming
US7545603B2 (en) 2004-04-30 2009-06-09 Tdk Corporation Magnetic head and manufacturing method thereof
US7038204B2 (en) 2004-05-26 2006-05-02 International Business Machines Corporation Method for reducing proximity effects in electron beam lithography

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