JPS56126916A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56126916A
JPS56126916A JP3017380A JP3017380A JPS56126916A JP S56126916 A JPS56126916 A JP S56126916A JP 3017380 A JP3017380 A JP 3017380A JP 3017380 A JP3017380 A JP 3017380A JP S56126916 A JPS56126916 A JP S56126916A
Authority
JP
Japan
Prior art keywords
layer
chalcogenide
heatproof
silver
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3017380A
Other languages
Japanese (ja)
Other versions
JPS6024580B2 (en
Inventor
Akira Yoshikawa
Akitsu Takeda
Osamu Ochi
Tomoko Kuki
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3017380A priority Critical patent/JPS6024580B2/en
Publication of JPS56126916A publication Critical patent/JPS56126916A/en
Publication of JPS6024580B2 publication Critical patent/JPS6024580B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To diffuse Se easily and in high accuracy from a chalcogenide to which silver is added by a method wherein an amorphous chalcogenide layer, a principal ingredient thereof is Se, and a photoresist layer formed by stacking silver or a layer containing silver are made up on a substrate in a III-V group compound, and the surface is developed, coated with a heatproof film and thermally treated. CONSTITUTION:A photoresist material 5 formed by laminating an amorphous chalcogenide 3 having 75 atom % Se and 25 atom % Ge and a layer 4 containing Ag is made up on a P type GaAs substrate 1, exposed 6 and developed. When a heatproof layer 8 of SiO2, Ti, etc. is built up on the chalcogenide 7 to which Ag is added and thermally treated, Se is diffused from the layer 7, and an N layer 9 is obtained. The heatproof layer 8 is removed, an insulating film 11 is opened, and an electrode 12 is attached. A mask is not required except the inorganic photoresist layer 5, the layer 7 can be formed in a pattern of high accuracy, and the layer 9 can be brought to necessary concentration by controlling heat treatment time.
JP3017380A 1980-03-10 1980-03-10 Manufacturing method for semiconductor devices Expired JPS6024580B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3017380A JPS6024580B2 (en) 1980-03-10 1980-03-10 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3017380A JPS6024580B2 (en) 1980-03-10 1980-03-10 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS56126916A true JPS56126916A (en) 1981-10-05
JPS6024580B2 JPS6024580B2 (en) 1985-06-13

Family

ID=12296352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3017380A Expired JPS6024580B2 (en) 1980-03-10 1980-03-10 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6024580B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199507A (en) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp Solid phase diffusion of n-type impurity to iii-v compound semiconductor
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6646902B2 (en) 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6653193B2 (en) 2000-12-08 2003-11-25 Micron Technology, Inc. Resistance variable device
US6710423B2 (en) 2001-03-01 2004-03-23 Micron Technology, Inc. Chalcogenide comprising device
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6812087B2 (en) 2002-01-31 2004-11-02 Micron Technology, Inc. Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
US6818481B2 (en) 2001-03-07 2004-11-16 Micron Technology, Inc. Method to manufacture a buried electrode PCRAM cell
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US6912147B2 (en) 2003-03-12 2005-06-28 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7387909B2 (en) 2002-07-10 2008-06-17 Micron Technology, Inc. Methods of forming assemblies displaying differential negative resistance
US8895401B2 (en) 2004-08-12 2014-11-25 Micron Technology, Inc. Method of forming a memory device incorporating a resistance variable chalcogenide element
US9142263B2 (en) 2004-03-10 2015-09-22 Round Rock Research, Llc Power management control and controlling memory refresh operations

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199507A (en) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp Solid phase diffusion of n-type impurity to iii-v compound semiconductor
US6737726B2 (en) 2000-12-08 2004-05-18 Micron Technology, Inc. Resistance variable device, analog memory device, and programmable memory cell
US7061071B2 (en) 2000-12-08 2006-06-13 Micron Technology, Inc. Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device
US6653193B2 (en) 2000-12-08 2003-11-25 Micron Technology, Inc. Resistance variable device
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6710423B2 (en) 2001-03-01 2004-03-23 Micron Technology, Inc. Chalcogenide comprising device
US6709887B2 (en) * 2001-03-01 2004-03-23 Micron Technology, Inc. Method of forming a chalcogenide comprising device
US6818481B2 (en) 2001-03-07 2004-11-16 Micron Technology, Inc. Method to manufacture a buried electrode PCRAM cell
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US7067348B2 (en) 2001-08-29 2006-06-27 Micron Technology, Inc. Method of forming a programmable memory cell and chalcogenide structure
US6646902B2 (en) 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6812087B2 (en) 2002-01-31 2004-11-02 Micron Technology, Inc. Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
US8466445B2 (en) 2002-02-20 2013-06-18 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
US8080816B2 (en) 2002-02-20 2011-12-20 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7646007B2 (en) 2002-02-20 2010-01-12 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7387909B2 (en) 2002-07-10 2008-06-17 Micron Technology, Inc. Methods of forming assemblies displaying differential negative resistance
US7879646B2 (en) 2002-07-10 2011-02-01 Micron Technology, Inc. Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7542319B2 (en) 2003-03-12 2009-06-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7315465B2 (en) 2003-03-12 2008-01-01 Micro Technology, Inc. Methods of operating and forming chalcogenide glass constant current devices
US6912147B2 (en) 2003-03-12 2005-06-28 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US9142263B2 (en) 2004-03-10 2015-09-22 Round Rock Research, Llc Power management control and controlling memory refresh operations
US8895401B2 (en) 2004-08-12 2014-11-25 Micron Technology, Inc. Method of forming a memory device incorporating a resistance variable chalcogenide element

Also Published As

Publication number Publication date
JPS6024580B2 (en) 1985-06-13

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