JPS54128670A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54128670A JPS54128670A JP3731378A JP3731378A JPS54128670A JP S54128670 A JPS54128670 A JP S54128670A JP 3731378 A JP3731378 A JP 3731378A JP 3731378 A JP3731378 A JP 3731378A JP S54128670 A JPS54128670 A JP S54128670A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- circumference
- plating
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
PURPOSE: To block the formation of projection electrode at the circumference by leaving the insulation layer at the circumference of the semiconductor wafer.
CONSTITUTION: P type diffusion layer is formed on the N type substrate and the resist mask 8 is formed, and the oxide thin film is removed caused at the formation of P type layer. On the exposed layer 2, the gold evaporated film 4 is provided and the AuSb alloy evaporation film 5 and the Ag plating film 6 are laminated on the entire surface of the substrate 1. When silver plating is made by taking the film 6 with the negative electrode plating solution as the positive, the silver projecting electrode 7 is formed on the film 4 and no electrode is formed on the P type layer 2 at the circumference with the resist mask 8. Thus, the yield rate is increased and the plating time can be reduced.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53037313A JPS5827651B2 (en) | 1978-03-29 | 1978-03-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53037313A JPS5827651B2 (en) | 1978-03-29 | 1978-03-29 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54128670A true JPS54128670A (en) | 1979-10-05 |
JPS5827651B2 JPS5827651B2 (en) | 1983-06-10 |
Family
ID=12494190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53037313A Expired JPS5827651B2 (en) | 1978-03-29 | 1978-03-29 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5827651B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5051269A (en) * | 1973-09-07 | 1975-05-08 | ||
JPS52146560A (en) * | 1976-05-31 | 1977-12-06 | Nec Home Electronics Ltd | Electrode plating apparatus for semiconductor devices |
-
1978
- 1978-03-29 JP JP53037313A patent/JPS5827651B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5051269A (en) * | 1973-09-07 | 1975-05-08 | ||
JPS52146560A (en) * | 1976-05-31 | 1977-12-06 | Nec Home Electronics Ltd | Electrode plating apparatus for semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
JPS5827651B2 (en) | 1983-06-10 |
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