JPS52120782A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52120782A
JPS52120782A JP3807176A JP3807176A JPS52120782A JP S52120782 A JPS52120782 A JP S52120782A JP 3807176 A JP3807176 A JP 3807176A JP 3807176 A JP3807176 A JP 3807176A JP S52120782 A JPS52120782 A JP S52120782A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
oxide film
substrate
faithful
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3807176A
Other languages
Japanese (ja)
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3807176A priority Critical patent/JPS52120782A/en
Publication of JPS52120782A publication Critical patent/JPS52120782A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: The anode oxidation is given to part of the surface of metal thin film coated on the semiconductor substrate to convert it to oxide film, and the exposed area of the substrate is etched by gas plasma using the above oxide film for the mask. In this way, the etching which has no electro migration and is faithful to the pattern becomes possible.
COPYRIGHT: (C)1977,JPO&Japio
JP3807176A 1976-04-05 1976-04-05 Manufacture of semiconductor device Pending JPS52120782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3807176A JPS52120782A (en) 1976-04-05 1976-04-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3807176A JPS52120782A (en) 1976-04-05 1976-04-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52120782A true JPS52120782A (en) 1977-10-11

Family

ID=12515246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3807176A Pending JPS52120782A (en) 1976-04-05 1976-04-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52120782A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469091A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5494880A (en) * 1978-01-11 1979-07-26 Mitsubishi Electric Corp Circuit pattern forming method of semiconductor device
JPS5496363A (en) * 1978-01-13 1979-07-30 Mitsubishi Electric Corp Electrode forming method for semiconductor device
JPS56162831A (en) * 1980-05-19 1981-12-15 Mitsubishi Electric Corp Forming method for electrode and wiring layer
JPS5740958A (en) * 1980-08-25 1982-03-06 Mitsubishi Electric Corp Formation of wiring pattern
JPS57134929A (en) * 1981-02-14 1982-08-20 Mitsubishi Electric Corp Method for interconnection-pattern forming
JPS57172739A (en) * 1981-04-17 1982-10-23 Toshiba Corp Pattern forming method
JPS57180149A (en) * 1981-04-30 1982-11-06 Nec Corp Manufacture of semiconductor device
JPS59117113A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern
JPH0277120A (en) * 1988-06-09 1990-03-16 Mitsubishi Electric Corp Thin film formation

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469091A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5494880A (en) * 1978-01-11 1979-07-26 Mitsubishi Electric Corp Circuit pattern forming method of semiconductor device
JPS5496363A (en) * 1978-01-13 1979-07-30 Mitsubishi Electric Corp Electrode forming method for semiconductor device
JPS56162831A (en) * 1980-05-19 1981-12-15 Mitsubishi Electric Corp Forming method for electrode and wiring layer
JPS5740958A (en) * 1980-08-25 1982-03-06 Mitsubishi Electric Corp Formation of wiring pattern
JPS57134929A (en) * 1981-02-14 1982-08-20 Mitsubishi Electric Corp Method for interconnection-pattern forming
JPS57172739A (en) * 1981-04-17 1982-10-23 Toshiba Corp Pattern forming method
JPS57180149A (en) * 1981-04-30 1982-11-06 Nec Corp Manufacture of semiconductor device
JPS59117113A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern
JPH0277120A (en) * 1988-06-09 1990-03-16 Mitsubishi Electric Corp Thin film formation

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