JPS5414165A - Selective oxidation method for semiconductor substrate - Google Patents
Selective oxidation method for semiconductor substrateInfo
- Publication number
- JPS5414165A JPS5414165A JP7952177A JP7952177A JPS5414165A JP S5414165 A JPS5414165 A JP S5414165A JP 7952177 A JP7952177 A JP 7952177A JP 7952177 A JP7952177 A JP 7952177A JP S5414165 A JPS5414165 A JP S5414165A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- oxidation method
- selective oxidation
- insulation
- separation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make flat the surface of separation region, by coating the photo resist film on the insulation film formed when the insulation separation region is provided on the semiconductor substrate, and performing normal etching after removing the thin resist film caused on the bird head at the end of the insulation film by incineration.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7952177A JPS5414165A (en) | 1977-07-05 | 1977-07-05 | Selective oxidation method for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7952177A JPS5414165A (en) | 1977-07-05 | 1977-07-05 | Selective oxidation method for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5414165A true JPS5414165A (en) | 1979-02-02 |
Family
ID=13692273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7952177A Pending JPS5414165A (en) | 1977-07-05 | 1977-07-05 | Selective oxidation method for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5414165A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5666035A (en) * | 1979-11-02 | 1981-06-04 | Tohoku Metal Ind Ltd | Minute processing method |
US5256589A (en) * | 1991-05-10 | 1993-10-26 | Sony Corporation | Method of improving the flatness of wiring layer |
KR970052784A (en) * | 1995-12-07 | 1997-07-29 | 김주용 | Field oxide film planarization method of semiconductor device |
US5851856A (en) * | 1993-12-03 | 1998-12-22 | Yamaha Corporation | Manufacture of application-specific IC |
US5882985A (en) * | 1995-10-10 | 1999-03-16 | Advanced Micro Devices, Inc. | Reduction of field oxide step height during semiconductor fabrication |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5383467A (en) * | 1976-11-30 | 1978-07-22 | Nec Corp | Production of semiconductor device |
-
1977
- 1977-07-05 JP JP7952177A patent/JPS5414165A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5383467A (en) * | 1976-11-30 | 1978-07-22 | Nec Corp | Production of semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5666035A (en) * | 1979-11-02 | 1981-06-04 | Tohoku Metal Ind Ltd | Minute processing method |
JPS586305B2 (en) * | 1979-11-02 | 1983-02-03 | 東北金属工業株式会社 | Microfabrication method |
US5256589A (en) * | 1991-05-10 | 1993-10-26 | Sony Corporation | Method of improving the flatness of wiring layer |
US5851856A (en) * | 1993-12-03 | 1998-12-22 | Yamaha Corporation | Manufacture of application-specific IC |
US5882985A (en) * | 1995-10-10 | 1999-03-16 | Advanced Micro Devices, Inc. | Reduction of field oxide step height during semiconductor fabrication |
KR970052784A (en) * | 1995-12-07 | 1997-07-29 | 김주용 | Field oxide film planarization method of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53108390A (en) | Semiconductor device and its manufacture | |
JPS5414165A (en) | Selective oxidation method for semiconductor substrate | |
JPS523390A (en) | Manufacturing method of semiconductor device | |
JPS5418279A (en) | Pattern formation method | |
JPS5362474A (en) | Cleaning method of metal photo mask | |
JPS5421278A (en) | Plasma etching method | |
JPS5254378A (en) | Production of semiconductor device | |
JPS53105982A (en) | Micropattern formation method | |
JPS5382174A (en) | Surface processing method for semiconductor device | |
JPS5341986A (en) | Production of semiconductor unit | |
JPS51117885A (en) | Semiconductor device manufacturing method | |
JPS5470783A (en) | Forming method for separate oxide film of semiconductor device | |
JPS5391635A (en) | Forming method for magnetic film pattern | |
JPS53116787A (en) | Production of semiconductor device | |
JPS53133376A (en) | Manufacture of semiconductor device | |
JPS5390831A (en) | Forming method for integration element | |
JPS52126184A (en) | Preparation of semiconductor device | |
JPS5378168A (en) | Manufacture of semiconductor device | |
JPS5384477A (en) | Forming method of dry etching mask | |
JPS5315766A (en) | Selective etching method of platinum layer | |
JPS548467A (en) | Photo etching method | |
JPS53136958A (en) | Selective impurity diffusion method into semiconductor substrate | |
JPS53133374A (en) | Semiconductor selective etching method | |
JPS5332676A (en) | Method of removing underetched portions of thin layer for masks | |
JPS5435683A (en) | Manufacture of semiconductor device |