JPS5414165A - Selective oxidation method for semiconductor substrate - Google Patents

Selective oxidation method for semiconductor substrate

Info

Publication number
JPS5414165A
JPS5414165A JP7952177A JP7952177A JPS5414165A JP S5414165 A JPS5414165 A JP S5414165A JP 7952177 A JP7952177 A JP 7952177A JP 7952177 A JP7952177 A JP 7952177A JP S5414165 A JPS5414165 A JP S5414165A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
oxidation method
selective oxidation
insulation
separation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7952177A
Other languages
Japanese (ja)
Inventor
Junichi Ochiai
Hironori Kitabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7952177A priority Critical patent/JPS5414165A/en
Publication of JPS5414165A publication Critical patent/JPS5414165A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make flat the surface of separation region, by coating the photo resist film on the insulation film formed when the insulation separation region is provided on the semiconductor substrate, and performing normal etching after removing the thin resist film caused on the bird head at the end of the insulation film by incineration.
COPYRIGHT: (C)1979,JPO&Japio
JP7952177A 1977-07-05 1977-07-05 Selective oxidation method for semiconductor substrate Pending JPS5414165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7952177A JPS5414165A (en) 1977-07-05 1977-07-05 Selective oxidation method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7952177A JPS5414165A (en) 1977-07-05 1977-07-05 Selective oxidation method for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5414165A true JPS5414165A (en) 1979-02-02

Family

ID=13692273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7952177A Pending JPS5414165A (en) 1977-07-05 1977-07-05 Selective oxidation method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5414165A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666035A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Minute processing method
US5256589A (en) * 1991-05-10 1993-10-26 Sony Corporation Method of improving the flatness of wiring layer
KR970052784A (en) * 1995-12-07 1997-07-29 김주용 Field oxide film planarization method of semiconductor device
US5851856A (en) * 1993-12-03 1998-12-22 Yamaha Corporation Manufacture of application-specific IC
US5882985A (en) * 1995-10-10 1999-03-16 Advanced Micro Devices, Inc. Reduction of field oxide step height during semiconductor fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5383467A (en) * 1976-11-30 1978-07-22 Nec Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5383467A (en) * 1976-11-30 1978-07-22 Nec Corp Production of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666035A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Minute processing method
JPS586305B2 (en) * 1979-11-02 1983-02-03 東北金属工業株式会社 Microfabrication method
US5256589A (en) * 1991-05-10 1993-10-26 Sony Corporation Method of improving the flatness of wiring layer
US5851856A (en) * 1993-12-03 1998-12-22 Yamaha Corporation Manufacture of application-specific IC
US5882985A (en) * 1995-10-10 1999-03-16 Advanced Micro Devices, Inc. Reduction of field oxide step height during semiconductor fabrication
KR970052784A (en) * 1995-12-07 1997-07-29 김주용 Field oxide film planarization method of semiconductor device

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