JPS5383467A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5383467A
JPS5383467A JP14427376A JP14427376A JPS5383467A JP S5383467 A JPS5383467 A JP S5383467A JP 14427376 A JP14427376 A JP 14427376A JP 14427376 A JP14427376 A JP 14427376A JP S5383467 A JPS5383467 A JP S5383467A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
wafer surface
selective oxidation
simple operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14427376A
Other languages
Japanese (ja)
Inventor
Yoshiaki Suzuki
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14427376A priority Critical patent/JPS5383467A/en
Publication of JPS5383467A publication Critical patent/JPS5383467A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To flatten wafer surface by performing simple operations after selective oxidation of Si.
COPYRIGHT: (C)1978,JPO&Japio
JP14427376A 1976-11-30 1976-11-30 Production of semiconductor device Pending JPS5383467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14427376A JPS5383467A (en) 1976-11-30 1976-11-30 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14427376A JPS5383467A (en) 1976-11-30 1976-11-30 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5383467A true JPS5383467A (en) 1978-07-22

Family

ID=15358246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14427376A Pending JPS5383467A (en) 1976-11-30 1976-11-30 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5383467A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414165A (en) * 1977-07-05 1979-02-02 Oki Electric Ind Co Ltd Selective oxidation method for semiconductor substrate
JPS5546582A (en) * 1978-09-29 1980-04-01 Nec Corp Method of fabricating semiconductor device
JPS5666034A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Minute processing method
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105471A (en) * 1973-02-07 1974-10-05
JPS5157294A (en) * 1974-11-15 1976-05-19 Kogyo Gijutsuin Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105471A (en) * 1973-02-07 1974-10-05
JPS5157294A (en) * 1974-11-15 1976-05-19 Kogyo Gijutsuin Handotaisochino seizohoho

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414165A (en) * 1977-07-05 1979-02-02 Oki Electric Ind Co Ltd Selective oxidation method for semiconductor substrate
JPS5546582A (en) * 1978-09-29 1980-04-01 Nec Corp Method of fabricating semiconductor device
JPS5666034A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Minute processing method
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer

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