JPS5332676A - Method of removing underetched portions of thin layer for masks - Google Patents
Method of removing underetched portions of thin layer for masksInfo
- Publication number
- JPS5332676A JPS5332676A JP10747576A JP10747576A JPS5332676A JP S5332676 A JPS5332676 A JP S5332676A JP 10747576 A JP10747576 A JP 10747576A JP 10747576 A JP10747576 A JP 10747576A JP S5332676 A JPS5332676 A JP S5332676A
- Authority
- JP
- Japan
- Prior art keywords
- thin layer
- portions
- underetched
- masks
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To remove the overhang portions of the thin mask film formed on substrate positively by using an etching solution which selectively reacts only with said thin layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10747576A JPS5332676A (en) | 1976-09-07 | 1976-09-07 | Method of removing underetched portions of thin layer for masks |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10747576A JPS5332676A (en) | 1976-09-07 | 1976-09-07 | Method of removing underetched portions of thin layer for masks |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5332676A true JPS5332676A (en) | 1978-03-28 |
Family
ID=14460136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10747576A Pending JPS5332676A (en) | 1976-09-07 | 1976-09-07 | Method of removing underetched portions of thin layer for masks |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5332676A (en) |
-
1976
- 1976-09-07 JP JP10747576A patent/JPS5332676A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53108390A (en) | Semiconductor device and its manufacture | |
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS5494881A (en) | Exposure method | |
JPS5332676A (en) | Method of removing underetched portions of thin layer for masks | |
JPS5220764A (en) | Manufacturing system of mesa type semi-conductor unit | |
JPS53105982A (en) | Micropattern formation method | |
JPS5421278A (en) | Plasma etching method | |
JPS5255866A (en) | Etching method | |
JPS5360177A (en) | Photo mask | |
JPS5338277A (en) | Production of semiconductor device | |
JPS5382173A (en) | Positioning method | |
JPS5417677A (en) | Manufacture of semiconductor | |
JPS5248976A (en) | Process for production of semiconductor device | |
JPS5329673A (en) | Production of semiconductor device | |
JPS52127173A (en) | Pattern formation method | |
JPS5369582A (en) | Coating method for photo-resist | |
JPS5421173A (en) | Manufacture for semiconductor having oxide film | |
JPS5359370A (en) | Positioning method | |
JPS5327368A (en) | Selective etching method | |
JPS5382271A (en) | Photo mask | |
JPS5255381A (en) | Photo exposure method | |
JPS5286072A (en) | Photomask of chromium | |
JPS5286073A (en) | Selective etching | |
JPS5254378A (en) | Production of semiconductor device | |
JPS5353964A (en) | Electrode forming method of semiconductor device |