JPS57112020A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS57112020A
JPS57112020A JP18726680A JP18726680A JPS57112020A JP S57112020 A JPS57112020 A JP S57112020A JP 18726680 A JP18726680 A JP 18726680A JP 18726680 A JP18726680 A JP 18726680A JP S57112020 A JPS57112020 A JP S57112020A
Authority
JP
Japan
Prior art keywords
film
foreign substance
electron beam
region
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18726680A
Other languages
Japanese (ja)
Inventor
Katsuyuki Arii
Shinya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18726680A priority Critical patent/JPS57112020A/en
Publication of JPS57112020A publication Critical patent/JPS57112020A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the generation of defective patterns caused by a microspic foreign substance by a method wherein, when a desired pattern is drawn on a resist film formed on the surface of a substrate to be processed by irradiating an electron beam, the amount of exposure of the internal region is selected larger than that of the circumferential part of the pattern. CONSTITUTION:A Cr film 2 is coated on a glass substrate 1 using a sputtering method, a resist film 3 such as polymethyl metaacrylate is formed on the above film 2, and a desired pattern 5 is drawn by irradiating an electron beam. In this constitution, if a microscopic foreign substance 4 such as dust is existed within the region of the pattern 5 on the film 3, the film 3 directly below the foreign substance 4 is insufficiently exposed. Therefore, a normal dosage is given to the circumferential part of the region 5, but a larger dosage than the above is given to the internal region 7. Through these procedures, the transmitting efficiency of the electron beam for the foreign substance 4 is increased, and the film 3 directly below the foreign substance 4 can be fully reacted due to the expansion of the beam into the film 3.
JP18726680A 1980-12-29 1980-12-29 Exposure of electron beam Pending JPS57112020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18726680A JPS57112020A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18726680A JPS57112020A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Publications (1)

Publication Number Publication Date
JPS57112020A true JPS57112020A (en) 1982-07-12

Family

ID=16202967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18726680A Pending JPS57112020A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS57112020A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure

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