JPS56140345A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56140345A
JPS56140345A JP4202180A JP4202180A JPS56140345A JP S56140345 A JPS56140345 A JP S56140345A JP 4202180 A JP4202180 A JP 4202180A JP 4202180 A JP4202180 A JP 4202180A JP S56140345 A JPS56140345 A JP S56140345A
Authority
JP
Japan
Prior art keywords
film
pattern
resist
resist film
draw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4202180A
Other languages
Japanese (ja)
Other versions
JPH0128374B2 (en
Inventor
Kozo Mochiji
Yoji Maruyama
Shinji Okazaki
Fumio Murai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4202180A priority Critical patent/JPS56140345A/en
Priority to EP81301422A priority patent/EP0037708B1/en
Priority to DE8181301422T priority patent/DE3175019D1/en
Priority to US06/250,217 priority patent/US4403151A/en
Publication of JPS56140345A publication Critical patent/JPS56140345A/en
Publication of JPH0128374B2 publication Critical patent/JPH0128374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a resist pattern with superior dry etching resistance by forming a resist film on the surface of a metal film, an insulating film or the like on a semiconductor substrate, irradiating the resist film with electron beams or far ultraviolet rays to draw a pattern, and exposing the whole surface of the resist film to ultraviolet light. CONSTITUTION:Resist film 1 is formed on the surface of metal film, insulating film or the like 2 on a semiconductor substrate, heat-treated (prebaked), and irradiated with electron beams or far ultraviolet rays to draw a desired pattern. Film 1 is then exposed to ultraviolet light 4 over the whole surface, heat-treated at 100- 130 deg.C (after-baked), and dipped in an aqueous org. ammonium soln. or an aqueous alkali soln. to remove the undrawn region which has been made soluble in alkali by the exposure. Thus, fine resist pattern 5 of <=1mum is obtd. in such simple processes.
JP4202180A 1980-04-02 1980-04-02 Formation of pattern Granted JPS56140345A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4202180A JPS56140345A (en) 1980-04-02 1980-04-02 Formation of pattern
EP81301422A EP0037708B1 (en) 1980-04-02 1981-04-01 Method of forming patterns
DE8181301422T DE3175019D1 (en) 1980-04-02 1981-04-01 Method of forming patterns
US06/250,217 US4403151A (en) 1980-04-02 1981-04-02 Method of forming patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4202180A JPS56140345A (en) 1980-04-02 1980-04-02 Formation of pattern

Publications (2)

Publication Number Publication Date
JPS56140345A true JPS56140345A (en) 1981-11-02
JPH0128374B2 JPH0128374B2 (en) 1989-06-02

Family

ID=12624509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4202180A Granted JPS56140345A (en) 1980-04-02 1980-04-02 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56140345A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010624A (en) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp Forming method for pattern
JPS60130828A (en) * 1983-12-19 1985-07-12 Oki Electric Ind Co Ltd Formation of resist pattern
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
KR100422956B1 (en) * 1996-08-21 2004-06-10 주식회사 하이닉스반도체 Method for forming fine pattern

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06
JPS526528A (en) * 1975-06-30 1977-01-19 Ibm Method of forming resist film
JPS5692536A (en) * 1979-12-27 1981-07-27 Fujitsu Ltd Pattern formation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06
JPS526528A (en) * 1975-06-30 1977-01-19 Ibm Method of forming resist film
JPS5692536A (en) * 1979-12-27 1981-07-27 Fujitsu Ltd Pattern formation method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010624A (en) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp Forming method for pattern
JPS60130828A (en) * 1983-12-19 1985-07-12 Oki Electric Ind Co Ltd Formation of resist pattern
JPH0458170B2 (en) * 1983-12-19 1992-09-16 Oki Electric Ind Co Ltd
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
JPH0551169B2 (en) * 1987-01-27 1993-07-30 Fujitsu Ltd
KR100422956B1 (en) * 1996-08-21 2004-06-10 주식회사 하이닉스반도체 Method for forming fine pattern

Also Published As

Publication number Publication date
JPH0128374B2 (en) 1989-06-02

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